Difference scheme for the problem of femtosecond pulse interaction with a semiconductor in the case of nonlinear mobility

A difference scheme is proposed for the problem of femtosecond pulse interaction with a semiconductor when the light absorption coefficient and the mobility of free electrons are nonlinear functions of the electric field. The scheme is compared with previously known difference schemes regarding their efficiency as applied to the computation of various interaction regimes. It is shown that the proposed scheme can be used to compute regimes on which previously known schemes failed.