Measurements of the transmission of silicon under the effect of the radiation of intense shock waves in xenon

The transmittance coefficient of silicon samples exposed to radiation of intense shock waves in xenon is measured. Shock waves are generated using the energy of condensed explosives. The intensity of radiation transmission at a wavelength of $1500$ nm is measured by pyrometric methods. A model of the process based on the appearance of an absorbing layer in silicon due to photoionization is proposed.