Generation of high-voltage pulses by sharp-recovery SiC drift diodes ($n$-base versus $p$-base diodes)
P. A. Ivanov, I. V. Grekhov

This publication is cited in the following articles:

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2. P. A. Bokhan, P. P. Gugin, M. A. Lavrukhin, D. E. Zakrevsky, I. V. Schweigert, “Peculiarities of the mechanism of subnanosecond switching of high-voltage pulses in eptron”, Physics of Plasmas, 32:12 (2025)  
3. D. Guo, X. Tang, J. Guo, Y. Zhou, Z. Jiang, Y. Feng, Y. Zhang, Q. Song, 2024 IEEE International Conference on Plasma Science (ICOPS), 2024, 1  
4. P A Bokhan, P P Gugin, M A Lavrukhin, D E Zakrevsky, I V Schweigert, A L Alexandrov, “Investigation of the characteristics and mechanism of subnanosecond switching of a new type of plasma switches. I. Devices with counter-propagating electron beams—kivotrons”, Plasma Sources Sci. Technol., 29:8 (2020), 084002  
5. A. A. Lebedev, P. A. Ivanov, M. E. Levinshtein, E. N. Mokhov, S. S. Nagalyuk, A. N. Anisimov, P. G. Baranov, “SiC-based electronics (100th anniversary of the Ioffe Institute)”, Phys. Usp., 62:8 (2019), 754–794