This publication is cited in the following articles:
N. N. Ageeva, I. L. Bronevoi, A. N. Krivonosov, “Dimensional resonance of intrinsic stimulated picosecond emission while it induces a photonic crystal and electron population oscillations in heterostructure Al<sub>x</sub>Ga<sub>1–x</sub>As–GaAs–Al<sub>x</sub>Ga<sub>1–x</sub>As”, Radiotehnika i èlektronika, 69:2 (2024), 187
N. N. Ageeva, I. L. Bronevoi, A. N. Krivonosov, “Intrinsic Stimulated Intense Picosecond Emission
in the Amplification Saturation Mode and the “Threshold” State of Electron-Hole Plasma in the AlxGa1 – xAs–GaAs–AlxGa1 – xAs Heterostructure”, Radiotekhnika i elektronika, 68:3 (2023), 211
N. N. Ageeva, I. L. Bronevoi, D. N. Zabegaev, A. N. Krivonosov, “Functional Dependences of the Maximum Energy Density of the Spectral Component of Stimulated Picosecond Emission by GaAs upon Gain Saturation. The Residual Characteristic Emission Relaxation Time”, Semiconductors, 56:3 (2022), 145
N. N. Ageeva, I. L. Bronevoi, A. N. Krivonosov, “Picosecond Modulation of the Fundamental Absorption of Light: Mapping of Oscillations and Depletion of Electron Population in the Field of Intrinsic Intense Stimulated Emission in an AlxGa1 – xAs–GaAs–AlxGa1 – xAs Heterostructure (Experimental Study)”, J. Exp. Theor. Phys., 135:6 (2022), 965
N. N. Ageeva, I. L. Bronevoi, D. N. Zabegaev, A. N. Krivonosov, “Transition from an Exponential to Linear Increase in the Energy Density of the Spectral Component of Picosecond Stimulated Emission by GaAs upon Gain Saturation”, Semiconductors, 56:3 (2022), 153
N. N. Ageeva, I. L. Bronevoi, D. N. Zabegaev, A. N. Krivonosov, “Effect of carrier heating by intrinsic stimulated picosecond emission in GaAs on a linear increase at the front and the duration of the spectral component of this emission”, Semiconductors, 55:5 (2021), 476–481
