A selective BP/Si contact formed by low-temperature plasma-enhanced atomic layer deposition
A. S. Gudovskikh, D. A. Kudriashov, A. I. Baranov, A. V. Uvarov, I. A. Morozov

This publication is cited in the following articles:

1. Alina Maksimova, Alexander Uvarov, Demid Kirilenko, Artem Baranov, Ekaterina Vyacheslavova, Alexander Gudovskikh, Jean-Paul Kleider, “Trimethylboron as a precursor for boron phosphide plasma deposition at low temperature”, Journal of Vacuum Science & Technology A, 43:1 (2025)  
2. Tianlong Shi, Wei Yan, Zicheng Zhang, Lan Meng, Chunsheng Liu, Xiaohong Yan, “Monolayer BP: A Promising Photocatalyst for Water Splitting with High Carrier Mobility”, Catal Lett, 154:1 (2024), 42  
3. M. K. Bakhadyrkhanov, Z. T. Kenzhaev, S. V. Koveshnikov, A. A. Usmonov, G. Kh. Mavlonov, “Formation of Complexes of Phosphorus and Boron Impurity Atoms in Silicon”, Inorg Mater, 58:1 (2022), 1  
4. Alina A. Maksimova, Alexander V. Uvarov, Artem I. Baranov, Alexander S. Gudovskikh, Dmitri A. Kudryashov, Ekaterina A. Vyacheslavova, Ivan A. Morozov, Sylvain Le Gall, Jean-Paul Kleider, “Investigation of Plasma Deposited Boron Phosphide and Its Contact to Silicon”, ACS Appl. Energy Mater., 5:5 (2022), 5367  
5. S Y Kiyanitsyn, A S Gudovskih, “Computer simulations of solar cells based on silicon/boron phosphide selective contacts”, J. Phys.: Conf. Ser., 2086:1 (2021), 012087  
6. A A Maksimova, A I Baranov, A V Uvarov, D A Kudryashov, A S Gudovskikh, “Investigation of defects in structures based on BP/Si heterojunction”, J. Phys.: Conf. Ser., 2103:1 (2021), 012088