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JOURNALS // Zhurnal Tekhnicheskoi Fiziki // Archive

2013, Volume 83, Issue 6


Ïàìÿòè Íèêîëàÿ Èëüè÷à Èîíîâà
1

Physical electronics
Hydrogen and helium in nickel and 12Kh18N10T steel
E. A. Denisov, T. N. Kompaniets, A. A. Yukhimchuk, I. E. Boitso, I. L. Malkov
3
High-temperature field evaporation and its connection with surface ionization
O. L. Golubev
11
Adsorption of gold on oxidized tungsten
E. Yu. Afanas'eva
17
Influence of cesium atoms on the thermal decomposition of graphene films on (10-10)Re
E. V. Rut'kov, N. R. Gall'
23
Study of reactive film heterostructures with several interfaces using the thermal desorption spectroscopy
D. V. Buturovich, M. V. Kuzmin, M. V. Loginov, M. A. Mitsev
27
Field electron emission and field desorption of cesium from graphene
D. P. Bernadskii, V. G. Pavlov
33
Accumulation and transport of hydrogen in RUSFER-EK-181 ferritic-martensitic steel
E. A. Denisov, T. N. Kompaniets, M. A. Murzinova, A. A. Yukhimchuk (Jr.)
38
Application of the surface ionization for the detection of secondary particles in the secondary-ion mass spectrometry (SIMS)
S. N. Morozov, U. Kh. Rasulev
45
New surface ionization processes
M. V. Knat'ko, M. N. Lapushkin
51
Development of a dedicated isotope mass spectrometer for the noninvasive diagnostics of humans infected with Helicobacter Pylori
N. M. Blashenkov, E. S. Sheshenya, S. M. Soloviev, L. N. Gall', V. M. Sachenko, I. V. Zarutsky, N. R. Gall'
60
Electron spectroscopy of the nanostructures created in Si, GaAs, and CaF$_2$ surface layers using low-energy ion implantation
B. E. Umirzakov, D. A. Tashmukhamedova, D. M. Muradkabilov, Kh. Kh. Boltaev
66
Field and explosive emissions from graphene-like structures
G. N. Fursei, A. A. Kantonistov, M. A. Polyakov, A. M. Yafyasov, B. S. Pavlov, V. B. Bozhevol'nov
71
Formation of the Co/Si(110) interface: Phase composition and magnetic properties
M. V. Gomoyunova, G. S. Grebenyuk, K. M. Popov, I. I. Pronin
78
Application of electron-stimulated desorption for studying adsorbed layers
V. N. Ageev, Yu. A. Kuznetsov, N. D. Potehina
85

Theoretical and Mathematical Physics
Shielding of a low-frequency electric field by a multilayer circular disk
V. T. Erofeenko, G. Ch. Shushkevich
92
Dynamic magnetization reversal in dipole systems
A. M. Shutyi
98

Solids
High-temperature shape memory effect and the $B2$$L1_0$ thermoelastic martensitic transformation in Ni–Mn intermetallics
V. G. Pushin, N. N. Kuranova, E. B. Marchenkova, E. S. Belosludtseva, V. A. Kazantsev, N. I. Kourov
104
Temperature dependence of the anisotropy parameter of the LiFeAs upper critical field in the two-band Ginzburg–Landau theory
I. N. Askerzade, N. Guclu, R. T. Tagieva
114
Formation of zirconium hydride in the vicinity of stereo disclinations
N. M. Vlasov, Yu. G. Dragunov
118
Collective effects in a defect system of the structural element scale under deformation of a heterogeneous material with a regular structure
A. M. Leksovskii, G. N. Gubanova, V. E. Yudin, B. L. Baskin
122

Solid-State Electronics
Photocurrent saturation and negative differential photoconductivity in Ìn$_4$Si$_7$–Si$\langle$Mn$\rangle$–Ìn$_4$Si$_7$ and Ìn$_4$Si$_7$–Si$\langle$Mn$\rangle$–Ì heterojunctions
T. S. Kamilov, V. V. Klechkovskaya, B. Z. Sharipov, G. I. Ivakin
128

Physics of nanostructures
Method for modifying the structure and elemental composition of the solid surface during a high-voltage vacuum discharge
S. M. Lupekhin, A. A. Ibragimov
134

Electrophysics, electron and ion beams, physics of accelerators
Efficiency improvement of an electron collector intended for electron cooling systems using a Wien filter
M. I. Bryzgunov, A. V. Ivanov, V. M. Panasyuk, V. V. Parkhomchuk, V. B. Reva
139
Effect of multiple contactless rotations of charged particles in a hollow circular glass ring
M. A. Kumakhov, R. I. Tegaev
147

Brief Communications
On the scenario of transition to the broadband oscillation regime in the prototype of a low-voltage vircator
Yu. A. Kalinin, A. V. Starodubov, N. N. Kuznetsov
151
New “surface” criterion of melting
M. N. Magomedov
155


© Steklov Math. Inst. of RAS, 2026