|
Variband
Structures for Spectrometric
Measurements
B. I. Gilman, S. L. Liberman
|
1721 |
|
|
Impurity Photoconduction in Indium-Doped Pb$_{1-x-y}$Ge$_{x}$Sn$_{y}$Te Solid Solution
Kh. A. Abdullin, A. I. Lebedev
|
1725 |
|
|
Study of GaAs-Based Vertical Field Controlled
Phototransistors. Mechanism of Amplification and Kinetics of
Photocurrent
M. S. Bogdanovich, L. A. Volkov, V. G. Danl'chenko, V. I. Korol'kov, N. R. Rakhimov, T. S. Tabarov, B. S. Yavich
|
1731 |
|
|
Kinetics of Photoconduction of Zinc-Doped
Germanium at Small Times of
Photoresponse
G. A. Aslanov, T. M. Burbaev, V. A. Kurbatov, N. A. Penin
|
1736 |
|
|
Electron-Hole Scattering and Anomalous
Temperature Dependence of
Gapless Semiconductors at Low Temperatures
R. V. Pomortsev, I. G. Kuleyev
|
1741 |
|
|
Peculiarities of Hole Scattering by Isovalent Tin Impurity
in PbSe Resulting in Strong Decrease of Conduction
E. A. Gurieva, L. V. Prokof'eva, Yu. I. Ravich, S. V. Zarubo, K. G. Gartsman
|
1746 |
|
|
Statistics of Carriers and
Conduction of a $p$-Type Semiconductor
with Dislocations
L. I. Glazman
|
1750 |
|
|
Band Structure of TlB$^{\text{V}}$C$^{\text{VI}}_{2}{-}$A$^{\text{IV}}$B$^{\text{VI}}$ Semiconductor
Solid Solutions in Cubic Phase
V. G. Kantser, N. M. Malkova, A. S. Sidorenko
|
1756 |
|
|
Absorption of Energy Quanta Less than Optical
Energy of Impurity Ionization in
Manganese-Doped Indium Phoshidae
V. A. Kurbatov, È. M. Omel'yanovskii, A. Ya. Polyakov, V. I. Raihshtein, V. V. Karataev, A. Ya. Nashel'skii, S. V. Yakobson
|
1763 |
|
|
Piezoresistance
and Hall Effect of Heavily Doped
$n$-Type Si Crystals
P. I. Baransky, V. V. Kolomoets, Yu. A. Okhrimenko
|
1768 |
|
|
Phonon-Defect Interaction in Doped
Indium Arsenide
M. V. Kurik, N. A. Semikolenova
|
1771 |
|
|
Nernst–Ettingshausen Tensor in Uniaxially Deformed $n$-Silicon
and $n$-Germanium. II
I. S. Buda, P. I. Baransky, V. S. Borenko
|
1774 |
|
|
Wannier–Stark Oscillations over Narrow
Magnetic Bands in High-Index Inversion
Layers
G. R. Aizin, V. A. Volkov
|
1780 |
|
|
Linear Magnetoresistance
of Many-Valley Semiconductors
in a Lightly Heating Electric Field
Zh. V. Kantsleris, A. Yu. Matulis, G. A. Tvardauskas
|
1786 |
|
|
Effect of Minority Charge Carrier Generation on the Capacity
Spectroscopy of Surface States in MDS Structures
A. A. Lebedev, V. Ekke, V. S. Yuferev
|
1791 |
|
|
Temperature
Fields of Electrons and Phonons in
Semiconductors of Finite Sizes
V. S. Bochkov, Yu. G. Gurevich, L. A. Shekhtman
|
1796 |
|
|
Electron Photothermomagnetic
Effect in Cd$_{x}$Hg$_{1-x}$Te Variband Semiconductors
A. I. Vakser, V. A. Pogrebnyak, D. D. Khalameida
|
1801 |
|
|
Effect of Range Action
under Mechanical Treatment of Gallium
Arsenide
B. I. Bednyi, S. N. Ershov, V. A. Panteleev
|
1806 |
|
|
On the Possibility of Submillimeter Negative Differential Conduction
under Intervalley Transfer of Hot Electrons in High Electric Fields
A. A. Andronov, G. E. Dzamukashvili
|
1810 |
|
|
Photoluminescence of
Localized Levels in PbSe
S. I. Zolotov
|
1822 |
|
|
Low Rate
of Surface Recombination (${S =10^{4}}\,cm/s$) in Epitaxial $n$-Òóðå
GaAs
V. M. Andreev, A. M. Allakhverdiev, V. D. Rumancev, O. M. Fedorova, S. S. Shamukhamedov
|
1826 |
|
|
Effect of Sulphur Impurity on
the Density of Surface States in
MDS Structures
S. Z. Zainabidnnov, S. I. Vlasov, I. N. Karimov, M. Karimov, M. S. Yunusov
|
1830 |
|
|
Electronic Structure on
Ideal and Nonideal (111), (001)
and (110) Faces of Gallium Arsenide
G. V. Gadiyak, A. A. Karpusin, I. V. Korolenko, Yu. N. Morokov, S. G. Sazonov
|
1833 |
|
|
Short Notes
|
|
|
Quasi-Relativistic Band Spectrum of Bismuth
Selenide
E. V. Oleshko, V. N. Korolyshin
|
1839 |
|
|
ESR of Europium-Doped Indium
Phosphide
L. F. Zakharenkov, S. I. Markov, V. F. Masterov, K. F. Shtel'makh
|
1841 |
|
|
Magnetoresistance
of InSb in Condition
of Uniform Compression
V. P. Kislyi, V. K. Malyutenko, V. B. Sukhorebryi, A. Shove
|
1843 |
|
|
Statistics
of Charge Carriers in $p$-Òóðå Si
with Vacancies
L. I. Shpinar, I. I. Yaskovets
|
1845 |
|
|
Diffusional
Model of implantation by Recoil
Yu. F. Blinov, P. V. Serba
|
1848 |
|
|
Measurement of Characteristics of Radiation Centers
in Silicon Irradiated by Fast Electrons by the Method of Space-Charge-Limited Pulse Currents
S. V. Bezlyudnyi, N. V. Kolesnikov, A. N. Yakimenko
|
1851 |
|
|
Polaron Shift in the Theory of Shallow
Acceptors in Semiconductors
with Degenerate Bands
S. N. Gifeisman, V. P. Koropchanu
|
1853 |
|
|
Effect of Electron-Electron Interaction on
Gap Width of Heavily Doped Many-Valley Semiconductors
Yu. A. Pusep, M. P. Sishokov
|
1855 |
|
|
Special Features
of Self-Compensation of Halogen
Donor Action in Lead Telluride
V. I. Kaidanov, S. A. Nemov, Yu. I. Ravich, A. Yu. Dereza
|
1857 |
|
|
On the Origination of
the Five-Vacancy Complex in Silicon
V. F. Stel'makh, V. P. Tolstykh, L. V. Tsvirko
|
1860 |
|
|
Edge Electroluminescence
in 6$H$-SiC
S. F. Avramenko, S. I. Boiko, O. A. Guseva, V. S. Kiselev
|
1863 |
|
|
Dependence of Resonant-State Band
Energy Position on Temperature and
Impurity Quantity in ÐbÒå$\langle$Òl, Na$\rangle$
T. R. Mashkova, S. A. Nemov
|
1864 |
|
|
«Spin Glass»-Type
States in Gallium Arsenide
V. F. Masterov, S. B. Mikhrin, K. F. Shtel'makh
|
1867 |
|
|
Relaxation Times of Two-Dimensional Bound
Electrons in a Quantizing Magnetic
Field
Yu. B. Grebenshchikov
|
1869 |
|
|
Formation of Plasmoids in
Electron-Hole Plasma Heated by an
Electric Field
V. V. Gafjjchuk, B. S. Kerner, V. V. Osipov
|
1871 |
|
|
On the Propagation of an Electromagnetic
Pulse in the System of Magnetopolarons
A. S. Kindyak, V. P. Gribkovskii
|
1874 |
|
|
Nonlinear Resonant Peculiarities of Superlattice
Electric Characteristics in Conditions of Strong Intersubband
Electron Tunneling
L. K. Orlov, Yu. A. Romanov
|
1877 |
|
|
Effect of Pressure on
Electric Properties of Iron Monosilicide
A. S. Panfilov
|
1881 |
|
|
Effect of Gamma-Irradiation-Dose Power
on the Shift of MOS-Transistor
Threshold Voltage
Yu. V. Barinov, F. G. Gaisin, R. G. Useinov, N. G. Chaikovskii
|
1883 |
|
|
Conduction of Degenerate
Electron Gas in Selectively
Doped Heterostructures
V. I. Tolstikhin
|
1886 |
|
|
Calculation of Variations of Optical Parameters
and Electron Structure under Amorphous-Silicon Hydrogenation
A. M. Grekhov, V. M. Gunko
|
1889 |
|
|
Calculation
of the Effect of Disorder on
Amorphous-Silicon Optical Constants
A. M. Grekhov, V. M. Gunko
|
1892 |
|
|
Ground State of a Screened
Helium-Like Impurity Complex
M. V. Ivanov
|
1893 |
|
|
$S$-Òóðå Negative Differential Conduction in InSb at Room Temperature
V. K. Malyutenko, Yu. M. Malozovskii, V. S. Radchenko, V. B. Sukhorebryi
|
1895 |
|
|
Mechanisms of
Piezoresistance in $n$-Type Ge Heavy
Doped Crystals at 4.2 Ê
P. I. Baransky, V. V. Kolomoets, Yu. A. Okhrimenko
|
1898 |
|
|
On the
Field Quenching of Residual Conduction
N. A. Urmanov, O. Khusainov
|
1900 |
|
|
Interaction
of Gold with Impurity Clouds in Silicon
A. V. Voronkova, V. P. Kalinushkin, T. M. Murina, N. S. Sysoeva
|
1902 |
|
|
Instability of Yb$^{3+}$ and Pr$^{3+}$ Low-Symmetry Luminescence
Centers in Gallium Phosphide
V. A. Kasatkin
|
1904 |
|
|
Study of Charge-Carrier Number Concentration
Dependence under Simple and Complex Doping of Indium Antimonide
by Cadmium and Selenium
V. M. Glazov, E. B. Smirnova
|
1905 |
|
|
Effect
of Ytterbium Charge State on the Conduction of InP$\langle$Yb$\rangle$
V. A. Kasatkin, V. N. Romanov
|
1908 |
