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JOURNALS // Fizika i Tekhnika Poluprovodnikov // Archive

1985, Volume 19, Issue 12


Semiconductors A$^{\text{III}}$B$^{\text{V}}$ – Are 35 Years Old
Z. I. Alferov, B. V. Tsarenkov
2113
Application of Neutron-Doped Silicon in Semiconductor Detectors
L. Bishoff
2118
Ionically Implanted Silicon Detectors with High Resolving Power
I. Fon Borani, B. Shmidt
2122
Effect of Large-Scale Inhomogeneities on the Relaxation of Nonequilibrium Capacity of MDS Structures
V. A. Gurtov, M. V. Zolotov
2127
Auger Interaction of Electrons with Complexes of Point Centers in Some A$^{\text{III}}$B$^{\text{V}}$ Semiconductors. I. Theory
Yu. V. Vorob'ev, E. I. Tolpygo, M. K. Sheĭnkman
2131
Auger Interaction of Electrons with Complexes of Point Centers in Some A$^{\text{III}}$B$^{\text{V}}$ Semiconductors. II. Comparison of Theory and Experiment
Yu. V. Vorob'ev, E. I. Tolpygo, M. K. Sheĭnkman
2139
Study of Hall Effect in Gallium and Indium Arsenides in Solid and Liquid Phases
V. M. Glazov, V. B. Koltsov, I. R. Suleimanov
2145
Dependence of Gap Width on the Composition of PbS$_{1-x}$Se$_{x}$ (${0\leqslant x\leqslant1}$) Solid Solution
I. I. Zasavitskii, A. V. Kurganskii, B. N. Matsonashvili, A. P. Shotov
2149
Recombination via Deep Levels in Hetero-$p{-}n$-Junctions
O. V. Konstantinov, O. A. Mezrin
2154
New Possibilities of Relaxation Spectroscopy of Deep Centers
V. G. Prikhod'ko
2163
Hot Photoelectrons in Indium Arsenide
A. V. Tamashyavichyus
2168
Collision Ionization of Excitons and Shallow Impurities in Gallium Arsenide in Electric and Magnetic Crossed Fields
N. N. Zinovyev, L. P. Ivanov, D. I. Kovalev, I. D. Yaroshetskiĭ
2173
Bipolar Drift and Thermodrift in Semiconductor Samples with a Single Heat-Insulating Contact. The Case of Drift Constants of the Same Signs
A. A. Akopyan
2177
Instability (Domainization) of an Electric Field in Multilayer Quantum Structures
A. A. Ignatov, V. I. Piskarev, V. I. Shashkin
2183

Short Notes
Tunnel Spectroscopy of Phonons in Indium Arsenide
A. P. Kovchavtsev, G. L. Kuryshev, K. O. Postnikov, S. A. Biryukov
2187
Scattering of Optical Radiation by Silicon under Nanosecond Laser Annealing
G. D. Ivlev
2188
Generation Current with Account for Tunneling in $p{-}n$ Junction under Small Back Biases
A. P. Vyatkin, V. P. Germogenov, V. A. Pozolotin
2191
Peculiarities of Optical Radiation of Ag$_{3}$AsS$_{3}$ Semiconductors under Electron Excitation
P. P. Bobonich, N. I. Dovgoshei
2194
Optical Studies of the Parameters of a Nonequilibrium Plasma in Cd$_{02}$Hg$_{0.8}$Te
V. K. Malyutenko, A. I. Liptuga, V. A. Botte, G. V. Beketov
2196
Some Properties of Cd$_{x}$Hg$_{1-x}$Te-Based Diodes near Liquid-Helium Temperature
A. G. Alekseev, M. V. Sednev, V. I. Stafeev, I. N. Petrov
2198
Efficiency of Defect Formation in $n$-Type Si under 1 MeV-Electron Irradiation
A. N. Kraichinskii, L. V. Muzrukhin, N. I. Ostashko, V. I. Shakhovtsov
2202
Effect of Composition of Silicon–Germanium Amorphous Alloys on Their Electric and Optical Properties
A. F. Khokhlov, A. I. Mashin, A. V. Ershov, N. I. Mashin, E. V. Larina
2204
Radiative Recombination of Excitons Bound on Radiation-Induced Defects in Germanium
V. A. Bykovsky, N. I. Zyatkova, V. D. Tkachev
2207
Static Conduction and Nonlinearities in Current–Voltage Characteristic of a Plastically Deformed Semiconductor
L. I. Glazman
2209
Variation of Ambipolar-Drift Direction in Germanium in Conditions of Intervalley Redistribution of Carriers
V. M. Bondar, A. A. Tarasenko
2212
Nonohmic Hopping Conduction of Amorphous CdGeAs$_2$
V. D. Okunev
2216
Solubility of Tin in Phosphorus-Doped Amorphous Hydrogenated Silicon
K. Kh. Khodzhaev, K. P. Abdurakhmanov, Yu. Ya. Amirov, G. S. Kulikov, E. I. Terukov, D. P. Utkin-Edin
2219
On the Different Characters of Free-Exciton Optical Resonances in Absorption and Luminescence Spectra of GaAs$_{1-y}$P$_{y}$ Solid Solutions
O. N. Ermakov
2220
Special Features of Photocurrent Distribution in Compensated-GaAs-Based $p{-}i{-}n$ Structures with Superlong Base Related with Electron Heating
A. A. Ptashchenko, V. I. Maryutin
2224
E.M.F. of a Short-Circuited Thermomagnetic Element
V. N. Boiko
2226
Negative Differential Conduction of In$_{0.53}$Ga$_{0.47}$As$-$InP-Based Heterostructures with Selective Doping
A. V. Garmatin, A. A. Kal'fa
2228
Multiple-Value Distributions of Hot Electrons over Semiconductor Equivalent Valleys in Alternating Electric Fields
Z. S. Gribnikov
2231

Annotations of Deposited Papers
Annotations of Deposited Papers
2235

Personalia
Yuras Karlovich Pozhela (to his 60-th birthday)
2240

Author Index
2243
Subject Index
2275


© Steklov Math. Inst. of RAS, 2026