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JOURNALS // Fizika i Tekhnika Poluprovodnikov // Archive

1985, Volume 19, Issue 3


Luminescence of Germanium Hot Holes in Submillimeter Wavelength Range
L. V. Berman, V. I. Gavrilenko, Z. F. Krasil'nik, V. V. Nikonorov, S. A. Pavlov, A. P. Chebotarev
369
Current-Voltage Characteristics of Semiconductors under Transverse Breakdown
S. M. Abdurakhmanov, V. V. Vladimirov, V. N. Gorshkov
378
Anisotropy of Magnetophonon Resonance on Holes in Ge
M. V. Yakunin
384
Magnetophonon Resonance on Holes in Uniaxially Deformed Germanium. Orientation of a Magnetic Field and Pressure along the $\langle100\rangle$ Axis
M. V. Yakunin
393
Kinetics of Exclusion at High Level of Optical Excitation
A. I. Veinger, R. S. Kasimova, Kh. R. Norkulova, L. G. Paritsky
400
Deep Donor Level in $n$-Bi$_{1-x}$Sb$_{x}$
V. A. Martyakhin, V. I. Trifonov
407
Wannier–Mott Excitons in Multilayer Systems
S. I. Beril, E. P. Pokatilov, V. M. Fomin, G. A. Pogorilko
412
On the Lasting Relaxation of Voltage on $p{-}n$ Junction
G. M. Avakyants, N. S. Aramyan, S. A. Tarumyan
418
«Radiation Transfer» in Semiconductors
V. K. Malyutenko, V. I. Pipa, E. I. Yablonovskii, S. S. Bolgov
422
Influence of the Relationship between Refractive Index and Carrier Concentration on Injection-Laser Spectrum
R. A. Suris, A. A. Tager
427
Peculiarities of Recombination Processes in ZnTe Epitaxial Photoconducting Layers
È. A. Senokosov, A. N. Usatyi
434
Contact Phenomena in a Semiconductor with Double Flow
Z. S. Gribnikov
438
Drift Velocity of Electrons in Al$_{x}$Ga$_{1-x}$As in High Electric Fields
A. V. Garmatin, A. S. Tager
446
Calculation of Threshold Currents for InGaAsP/InP and InGaAsP/GaAs Double-Heterostructure Lasers with Separate Limitation
D. Z. Garbuzov, V. P. Evtikhiev, S. Yu. Karpov, Z. N. Sokolova, V. B. Khalfin
449
Injection Continuous 60 mVt Laser Based on Liquid-Phase InGaAsP Double-Heterostructure of Separate Limitation (${\lambda=1.35}\,\mu m$, ${T=300}$ K)
Z. I. Alferov, D. Z. Garbuzov, A. B. Nivin, A. V. Ovchinnikov, I. S. Tarasov
456
Tunnel Effects in Charge Exchange of Deep Centers in Semiconductors
V. F. Masterov, V. A. Kharchenko
460
Defect Formation in Silicon under Ion Bombardment beyond the Limits of Ion-Parth Range
N. P. Morozov, V. D. Skupov, D. I. Tetelbaum
464
Influence of a Transverse Magnetic Field on Collision-Ionization Threshold in $n$-InSb Corbino Disks
P. A. Borodovskii, V. V. Kirienko, V. M. Osadchii, D. G. Tarlo
469
Intrinsic Point Defects in Dislocationless Silicon Crystals Heavily Doped by Arsenic
N. A. Anastaseva, V. T. Bublik, A. N. Morozov, O. Yu. Trokina
473
High-Frequency Properties of Bipolar Heterotransistors under Diffusion Transfer of Hot Electrons in the Base
V. I. Ryzhii, A. A. Zakharova, S. N. Panasov
480
To the Theory of Surface Magnetoplasma Waves at the Semiconductor–Metal Interface
N. N. Beletskii, V. M. Yakovenko
486
Inertia of Redistribution and High-Frequency Magnetoresistance of Inhomogeneous Semiconductor Films
A. M. Belayncev, M. N. Drozdov
492
Nernst–Ettingshausen Tensor in Uniaxially Deformed Semiconductors of Cubic System. I
I. S. Buda, P. I. Baransky
497
Coordinate Dependence of the Difference between the Coefficients of Collision Ionization of Holes and Electrons in a Variband $p{-}n$ Structure
A. N. Baranov, T. N. Danilova, A. N. Imenkov, B. V. Tsarenkov, Yu. M. Shernyakov, Yu. P. Yakovlev
502
Conduction-Mechanism Peculiarities for the Melts of Systems formed by Silver Chalcogenides
V. M. Glazov, A. S. Burkhanov
507
Influence of Electron-Phonon Interaction on Line Widths in the Spectrum of Excited States of Zn$^{-}$ Ion in Germanium
M. G. Galkin, N. A. Penin, N. N. Solovev
512

Short Notes
Admittance Spectroscopy of Energy Levels in Au-InP Schottky Barrier
B. B. Kuliev
517
Effect of Hardening and $\gamma$-Irradiation on the Properties of $n$-Type Silicon
M. S. Yunusov, Z. Muratov, A. S. Makhmudov
519
Effect of Background Interband Lighting on Photoconduction Spectra of Amorphous Hydrogenized Silicon
A. G. Kazanskii, E. P. Milichevich
522
On the Role of Density-of-States Tails in the Formation of Photoluminescence and Electroluminescence Spectra of GaAs$\langle$Si$\rangle$
V. L. Korolev, V. V. Rossin, V. G. Sidorov, Yu. K. Shalabutov
525
To the Problem of Boron Behaviour in Neutron-Doped Silicon
Yu. M. Babitskii, P. M. Grinshtein, B. M. Leiferov, M. A. Morokhovets
528
Lasting Relaxation of Photoconduction in Lead-Telluride Films
S. A. Kazmin, V. I. Kaidanov, S. S. Shevchenko
530
On the Possibility of Defect Identification in Semiconductors
V. I. Gubskaya, P. V. Kuchinsky, V. M. Lomako, A. P. Petrunin
532
Optical Quenching of Injection Current in Cu$_{3}$In$_{5}$S$_{9}$ Single Crystals
V. I. Tagirov, L. G. Gasanova, A. Z. Magomedov
534
Submillimeter Photoconduction of Epitaxial In$_{0.53}$Ga$_{0.47}$As
L. V. Berman, S. I. Larikov, A. I. Petrov
536
Residual Conduction of PbSe Polycrystalline Films
S. P. Varfolomeev, A. V. Pashkevich, Yu. L. Shelekhin
539
Probability of Trapping and Dispersion Transfer in Noncrystalline Semiconductors
S. D. Baranovsky, V. G. Karpov
541
Exclusion of Excess Charge Carriers at High Level of Optical Excitation
A. I. Veinger, R. S. Kasymova, Kh. R. Norkulova, L. G. Paritsky
543
Shape of Magnetophonon Oscillations in a High Electric Field
V. N. Gladilin, A. A. Klyukanov, E. P. Pokatilov
546
Influence of Conduction-Band Finite Width on Galvanomagnetic Effects in Semiconductors
V. M. Polyanovskii
549
Acoustic Injection of Charge Carriers in Piezosemiconductor $p{-}n$ Junctions
Yu. V. Gulyaev, I. I. Chusov, T. V. Bugaeva
552
Indirect Exchange between Magnetic Centers in a Narrow-Gap Semiconductor
V. I. Litvinov
555
Electric and Optical Properties of Chalcogenide Glass-Like Semiconductors Doped by Different Methods
V. L. Averyanov, S. I. Beril, G. A. Bordovskii, V. M. Lyubin, B. V. Pavlov
557

Annotations of Deposited Papers
Annotations of Deposited Papers
560


© Steklov Math. Inst. of RAS, 2026