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Luminescence of Germanium Hot Holes in Submillimeter Wavelength Range L. V. Berman, V. I. Gavrilenko, Z. F. Krasil'nik, V. V. Nikonorov, S. A. Pavlov, A. P. Chebotarev
|
369 |
|
Current-Voltage Characteristics of Semiconductors under Transverse Breakdown S. M. Abdurakhmanov, V. V. Vladimirov, V. N. Gorshkov
|
378 |
|
Anisotropy of Magnetophonon Resonance on Holes in Ge M. V. Yakunin
|
384 |
|
Magnetophonon Resonance on Holes in Uniaxially Deformed Germanium. Orientation of a Magnetic Field and Pressure along the $\langle100\rangle$ Axis M. V. Yakunin
|
393 |
|
Kinetics of Exclusion at High Level of Optical Excitation A. I. Veinger, R. S. Kasimova, Kh. R. Norkulova, L. G. Paritsky
|
400 |
|
Deep Donor Level in $n$-Bi$_{1-x}$Sb$_{x}$ V. A. Martyakhin, V. I. Trifonov
|
407 |
|
Wannier–Mott Excitons in Multilayer Systems S. I. Beril, E. P. Pokatilov, V. M. Fomin, G. A. Pogorilko
|
412 |
|
On the Lasting Relaxation of Voltage on $p{-}n$ Junction G. M. Avakyants, N. S. Aramyan, S. A. Tarumyan
|
418 |
|
«Radiation Transfer» in Semiconductors V. K. Malyutenko, V. I. Pipa, E. I. Yablonovskii, S. S. Bolgov
|
422 |
|
Influence of the Relationship between Refractive Index and Carrier Concentration on Injection-Laser Spectrum R. A. Suris, A. A. Tager
|
427 |
|
Peculiarities of Recombination Processes in ZnTe Epitaxial Photoconducting Layers È. A. Senokosov, A. N. Usatyi
|
434 |
|
Contact Phenomena in a Semiconductor with Double Flow Z. S. Gribnikov
|
438 |
|
Drift Velocity of Electrons in Al$_{x}$Ga$_{1-x}$As in High Electric Fields A. V. Garmatin, A. S. Tager
|
446 |
|
Calculation of Threshold Currents for InGaAsP/InP and InGaAsP/GaAs Double-Heterostructure Lasers with Separate Limitation D. Z. Garbuzov, V. P. Evtikhiev, S. Yu. Karpov, Z. N. Sokolova, V. B. Khalfin
|
449 |
|
Injection Continuous 60 mVt Laser Based on Liquid-Phase InGaAsP Double-Heterostructure of Separate Limitation (${\lambda=1.35}\,\mu m$, ${T=300}$ K) Z. I. Alferov, D. Z. Garbuzov, A. B. Nivin, A. V. Ovchinnikov, I. S. Tarasov
|
456 |
|
Tunnel Effects in Charge Exchange of Deep Centers in Semiconductors V. F. Masterov, V. A. Kharchenko
|
460 |
|
Defect Formation in Silicon under Ion Bombardment beyond the Limits of Ion-Parth Range N. P. Morozov, V. D. Skupov, D. I. Tetelbaum
|
464 |
|
Influence of a Transverse Magnetic Field on Collision-Ionization Threshold in $n$-InSb Corbino Disks P. A. Borodovskii, V. V. Kirienko, V. M. Osadchii, D. G. Tarlo
|
469 |
|
Intrinsic Point Defects in Dislocationless Silicon Crystals Heavily Doped by Arsenic N. A. Anastaseva, V. T. Bublik, A. N. Morozov, O. Yu. Trokina
|
473 |
|
High-Frequency Properties of Bipolar Heterotransistors under Diffusion Transfer of Hot Electrons in the Base V. I. Ryzhii, A. A. Zakharova, S. N. Panasov
|
480 |
|
To the Theory of Surface Magnetoplasma Waves at the Semiconductor–Metal Interface N. N. Beletskii, V. M. Yakovenko
|
486 |
|
Inertia of Redistribution and High-Frequency Magnetoresistance of Inhomogeneous Semiconductor Films A. M. Belayncev, M. N. Drozdov
|
492 |
|
Nernst–Ettingshausen Tensor in Uniaxially Deformed Semiconductors of Cubic System. I I. S. Buda, P. I. Baransky
|
497 |
|
Coordinate Dependence of the Difference between the Coefficients of Collision Ionization of Holes and Electrons in a Variband $p{-}n$ Structure A. N. Baranov, T. N. Danilova, A. N. Imenkov, B. V. Tsarenkov, Yu. M. Shernyakov, Yu. P. Yakovlev
|
502 |
|
Conduction-Mechanism Peculiarities for the Melts of Systems formed by Silver Chalcogenides V. M. Glazov, A. S. Burkhanov
|
507 |
|
Influence of Electron-Phonon Interaction on Line Widths in the Spectrum of Excited States of Zn$^{-}$ Ion in Germanium M. G. Galkin, N. A. Penin, N. N. Solovev
|
512 |
|
|
Short Notes
|
|
Admittance Spectroscopy of Energy Levels in Au-InP Schottky Barrier B. B. Kuliev
|
517 |
|
Effect of Hardening and $\gamma$-Irradiation on the Properties of $n$-Type Silicon M. S. Yunusov, Z. Muratov, A. S. Makhmudov
|
519 |
|
Effect of Background Interband Lighting on Photoconduction Spectra of Amorphous Hydrogenized Silicon A. G. Kazanskii, E. P. Milichevich
|
522 |
|
On the Role of Density-of-States Tails in the Formation of Photoluminescence and Electroluminescence Spectra of GaAs$\langle$Si$\rangle$ V. L. Korolev, V. V. Rossin, V. G. Sidorov, Yu. K. Shalabutov
|
525 |
|
To the Problem of Boron Behaviour in Neutron-Doped Silicon Yu. M. Babitskii, P. M. Grinshtein, B. M. Leiferov, M. A. Morokhovets
|
528 |
|
Lasting Relaxation of Photoconduction in Lead-Telluride Films S. A. Kazmin, V. I. Kaidanov, S. S. Shevchenko
|
530 |
|
On the Possibility of Defect Identification in Semiconductors V. I. Gubskaya, P. V. Kuchinsky, V. M. Lomako, A. P. Petrunin
|
532 |
|
Optical Quenching of Injection Current in Cu$_{3}$In$_{5}$S$_{9}$ Single Crystals V. I. Tagirov, L. G. Gasanova, A. Z. Magomedov
|
534 |
|
Submillimeter Photoconduction of Epitaxial In$_{0.53}$Ga$_{0.47}$As L. V. Berman, S. I. Larikov, A. I. Petrov
|
536 |
|
Residual Conduction of PbSe Polycrystalline Films S. P. Varfolomeev, A. V. Pashkevich, Yu. L. Shelekhin
|
539 |
|
Probability of Trapping and Dispersion Transfer in Noncrystalline Semiconductors S. D. Baranovsky, V. G. Karpov
|
541 |
|
Exclusion of Excess Charge Carriers at High Level of Optical Excitation A. I. Veinger, R. S. Kasymova, Kh. R. Norkulova, L. G. Paritsky
|
543 |
|
Shape of Magnetophonon Oscillations in a High Electric Field V. N. Gladilin, A. A. Klyukanov, E. P. Pokatilov
|
546 |
|
Influence of Conduction-Band Finite Width on Galvanomagnetic Effects in Semiconductors V. M. Polyanovskii
|
549 |
|
Acoustic Injection of Charge Carriers in Piezosemiconductor $p{-}n$ Junctions Yu. V. Gulyaev, I. I. Chusov, T. V. Bugaeva
|
552 |
|
Indirect Exchange between Magnetic Centers in a Narrow-Gap Semiconductor V. I. Litvinov
|
555 |
|
Electric and Optical Properties of Chalcogenide Glass-Like Semiconductors Doped by Different Methods V. L. Averyanov, S. I. Beril, G. A. Bordovskii, V. M. Lyubin, B. V. Pavlov
|
557 |
|
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Annotations of Deposited Papers
|
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Annotations of Deposited Papers
|
560 |