Fizika i Tekhnika Poluprovodnikov, 1985, Volume 19, Issue 4

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1985, Volume 19, Issue 4

	Pulsed Annealing of Semiconductors. State of the Problem and Unsolved Questions V. M. Maksimenko, L. S. Smirnov	569
	Deep Levels in РbТе F. F. Sizov, S. V. Plyatsko, V. M. Lakeenkov	592
	Energy Levels of Selenium in Silicon E. V. Astrova, I. B. Bolshakov, A. A. Lebedev, O. A. Mikhno	597
	Study of the Effect of Discrepancy between the Parameters of Epitaxial-Layer Lattices on Luminescent Properties of InGaAsP/InP Heterostructures Emitting at Wavelength ${\lambda=1.5}\,\mu m$ V. A. Strakhov, N. G. Yaremenko, A. A. Telegin, V. A. Ogandzhanyan, M. V. Karachevtseva, L. F. Mikhaleva, V. I. Petrov, V. A. Prokhorov	601
	Study of Deep Centers in Near-to-Surface Layers of $n$-Type Silicon Irradiated by Electrons G. A. Takhmazidi	608
	Semiconductor–Dielectric Transition in Lightly Doped Thermally Treated Semiconductors N. T. Bagraev, V. A. Mashkov, K. V. Mukovnikov	611
	Effect of Structure Perfection of Lead-Sulphide and Lead-Telluride Layers on Radiative-Recombination Quantum Yield at Room Temperature S. I. Zolotov, A. N. Kovalev, V. I. Paramonov, A. I. Yunovich	616
	Optical Absorption Spectra and Band Structure of PbSe T. R. Globus, A. O. Olesk	621
	Dependence of Gap Width on the Composition of PbSe$_{1-x}$Te$_{x}$ (${0\leqslant x\leqslant 1}$) Solid Solution M. V. Valeiko, I. I. Zasavitskii, V. L. Kuznetsov, A. V. Kurganskii, B. N. Matsonashvili	627
	ESR and Paramagnetic Relaxation of Fe($3d^{8}$) Interstitial Center in GaP V. F. Masterov, L. P. Pasechnik, K. F. Shtel'makh	632
	Peculiarities of the Transverse Nernst–Ettingshausen Effect in Conditions of High Resonance Scattering in РbТе$\langle$Tl$\rangle$ S. A. Nemov, Yu. I. Ravich, A. M. Zaitsev	636
	On the Temperature Dependence of Parameters of Intervalley Electron Relaxation in Silicon N. N. Grigorev, I. P. Zhad'ko, V. A. Romanov, B. K. Serdega, L. V. Shekhovtsov	642
	On the Mechanism of Semiconductor-Diamond Photosensitivity at Room Temperature O. I. Smirnova, E. E. Godik, A. G. Gontar'	646
	Positron Annihilation in Semiconductor Crystals with Oriented Edge Dislocations A. S. Baltenkov, V. B. Gilerson	651
	Study of Temperature Dependence of Ultrasound Rate in Selenium and Tellurium Melts V. M. Glazov, S. G. Kim	656
	Study of Hall Effect for Aluminium, Gallium and Indium Antimonides in Solid and Liquid States V. M. Glazov, V. V. Koltsov, V. A. Kurbatov	662
	Study of Leakage Currents of Planar $p{-}n$ Junctions in InP and of $p{-}i{-}n$ Structures Based on InGaAs/InP V. M. Andreev, A. T. Gorelenok, M. Z. Zhingarev, L. E. Klyachkin, V. V. Mamutin, N. M. Saradzhishvili, B. I. Skopina, O. V. Sulima, N. M. Shmidt	668
	Diffusion of Atoms in a Metal–Semiconductor Contact Stimulated by Radiation I. K. Sinishchuk, G. E. Chaika, F. S. Shishiyanu	674
	Effect of Population of Impurity Levels in the Spectra of GaAs Surface-Barrier Electroreflection A. M. Evstigneev, P. A. Gentsar, S. A. Grusha, R. V. Konakova, A. N. Krasiko, O. V. Snitko	678
	Peculiarities of the Spectra of Surface-State Density of Si$-$SiO$_2$ Structures Irradiated by Ar$^+$ Ions of Different Energies E. A. Bobrova, V. S. Vavilov, Yu. D. Vulis, G. N. Galkin	682
	Injection Attenuation and Exclusion Stimulated by a Magnetic Field V. N. Dobrovol'skii, D. L. Vorobev, S. P. Pavlyuk	687
	On the Mechanism of Thermodonor Formation in Oxygen-Containing Silicon V. V. Batavin, E. A. Kochina, Z. A. Salnik	692
	Impurity Auger Recombination in Silicon M. V. Strikha	697
	Interimpurity Transfer of Excitation in Near-to-Surface Layer of CdS Single Crystals Sensitized by Annealing in Hydrogen V. V. Dyakin, E. A. Sal'kov, S. M. Sklyarov, V. A. Khvostov, V. D. Fursenko, N. S. Khilimova	703
	Hot-Hole Distribution Function in Germanium in E and H Crossed Fields L. E. Vorobev, V. I. Stafeev, V. N. Tulupenko, Yu. K. Pozhela, E. V. Starikov, P. N. Shiktorov	708
	Intrinsic and Impurity Luminescence in GaAs$-$AlGaAs Structures with Quantum Wells Zh. I. Alferov, P. S. Kopv, B. Ya. Ber, A. M. Vasil'ev, S. V. Ivanov, N. N. Ledentsov, B. Ya. Mel'tser, I. N. Ural'tsev, D. R. Yakovlev	715
	Polarization of Luminescence of $n$-InSb in a High Magnetic Field under Two-Photon Pumping M. A. Alekseev, M. S. Bresler, O. B. Gusev, I. A. Merkulov, A. O. Stepanov	722
	Light-Intensity Transmission by a Plane-Parallel Semiconductor Plate when Nonlinear Absorption and Refraction Are Available I. P. Areshev	729

Short Notes
	Study of the Spectrum of Deep Centers in Epitaxial Structures by Relaxation Spectroscopy of Photoinduced Currents V. P. Kuznetsov, È. M. Omel'yanovskii, A. Ya. Polyakov, V. A. Fridman, G. V. Shepekina	735
	Relaxation of Pulsed Photoelectromotive Force in CdS at High Excitation Levels E. L. Lebedeva, V. M. Moldavskaya, Y. A. Stepanov	737
	Mechanisms of Diffusion of Boron Ionically Implanted into Silicon V. F. Stel'makh, Yu. R. Suprun-Belevich, V. D. Tkachev, A. R. Chelyadinskii	739
	Peculiarities of Photomagnetic Effect in GaAs$_{1-x-y}$Sb$_{x}$P$_{y}$ Variband Structures R. S. Gabaraev, V. A. Kalukhov, S. I. Chikichev	742
	Energy Spectrum of Surface States in Silicon Gap on the Silicon–Silicon Dioxide Interface V. Ya. Uritsky	744
	«Limiting» Dielectric Parameters of GaP Irradiated by Electrons V. N. Brudnyi, V. A. Novikov	747
	Excited States of Se Impurity in Ge N. B. Radchuk, A. Y. Ushakov	749
	Properties of MDS Structures with Stepwise Dielectric A. Ya. Shik	750
	Effect of Illumination on the Formation of Photoconduction Spectra in CDS Single Crystals and Role of Shallow Donors in the Process B. V. Novikov, E. A. Ubushiev, A. E. Cherednichenko	753
	Inelastic Trapping of Electrons by Shallow Neutral Impurities in Semiconductors under Piezoelectric Interaction E. V. Goldgur, R. I. Rabinovich	756
	Relaxation of Current in $n{-}\nu{-}n$ Structures Based on Compensated Silicon Related with Neutrality Violation S. S. Dzhunaidov, N. A. Urmanov	759
	Effect of Ultrasound on the Acoustic Characteristics of Cd$_{x}$Hg$_{1-x}$Te Crystals Ya. M. Olikh, E. A. Sal'kov, K. R. Kurbanov	762
	Magnetooptical Oscillations of Faraday Rotation in InSe Crystals A. I. Savchuk, P. P. Vatamanyuk, N. P. Gavaleshko, M. S. Kitsa	765
	Thermodonors in Erbium-Doped Silicon V. V. Petrov, V. S. Prosolovich, V. D. Tkachev, G. S. Tsyrulkevich, Y. A. Karpov	767
	Effect of Carbon on Minority-Carrier Lifetimes in Thermally Treated Oxygen-Containing Silicon K. D. Glinchuk, N. M. Litovchenko, Z. A. Salnik, S. I. Skryl, A. L. Troshin	770
	Dependence of the Parameters of Kildal–Bodnar Disperssion Law on the Tetragonal-Compression Value in Chalcopyrites A. M. Polubotko	772
	Photoconduction with Line Spectrum Excited by Monochromatic and Background Radiations Sh. M. Kogan	775
	Dislocation Structure and Residual Variations of Germanium Electric Properties after the Action of Laser Shock Waves N. I. Vasilevskaya, A. V. Polyaninov, V. D. Khvostikova, V. A. Yanushkevich, E. I. Kuzmin	777
	«On the Excess Donors in Transmutationally Doped Silicon Grown by Czochralski Method» (FTP, 1984, v. 18, № 9, p. 1642–1646) N. I. Akulovich, M. A. Morokhovets	780