|
Effect of Population of Conduction-Band Minority
Valleys on Hall Effect in $n$-Pb$_{1-x$Sn$_{x}$Te}
T. Lideikis, A. Plitnikas, I. Shimkene, A. Krotkus
|
977 |
|
|
Effect of Plastic Deformation on the State of Oxygen and Carbon in
Silicon
Yu. F. Shulyshkov, R. F. Vitman, A. A. Lebedev, A. N. Dremin
|
982 |
|
|
Low-Field Dimension Magnetoresistance in $n$-Type Silicon Plates Oriented
in the (100) Plane
B. Sh. Beridze, A. I. Klimovskaya, N. A. Prima, O. V. Snitko
|
987 |
|
|
Mechanism of Interaction of Defect-Accumulation Regions Produced by High-Energy Protons with Point
Defects in Germanium
Yu. M. Pokotilo, V. Yu. Yavid
|
993 |
|
|
Anomalous Behaviour of Mobility in Compensated Germanium
N. G. Zhdanova, M. S. Kagan, S. G. Kalashnikov, E. G. Landsberg, V. V. Petrishchev
|
998 |
|
|
Determination of Hall Concentration and Mobility in the Layers of Inversion on Semiconductor
Surfaces
A. S. Vedeneev, A. G. Zhdan, P. S. Sul'zhenko
|
1003 |
|
|
Temperature Dependence of Photoconduction Amplitude-Frequency Characteristics in a Semiconductor
with Two-Level Impurity (Ge : Hg)
V. A. Kurbatov, N. A. Penin, N. N. Solovev
|
1008 |
|
|
Reflection of SHF Oscillations from a Plasma Layer
with Controllable Charge-Carrier Concentration Inhomogeneity
V. V. Antonov
|
1012 |
|
|
Variation of Electrophysical Properties
of Heavily Doped Layers of Neutron-Irradiated $p$-Type Silicon
on Sapphire
B. V. Koba, V. L. Litvinov, A. L. Ocheretyanskii, V. M. Stuchebnikov, N. A. Ukhin, I. B. Fedotov, V. V. Khasikov, V. N. Chernitsyn
|
1017 |
|
|
Effect of Neutron Irradiation
on Photoluminescence of Al$_{x}$Ga$_{1-x}$As As Variband Structures
V. F. Kovalenko, G. P. Peka, O. A. Tokalin
|
1021 |
|
|
Characteristics of à Íåterojunction in a Heterostructure with Selective Doping
A. A. Kal'fa
|
1025 |
|
|
Ionically Stimulated Ordering
of Previously Irradiated Silicon
Structure
I. A. Abroyan, L. M. Nikulina, A. I. Titov
|
1030 |
|
|
Localized States Limiting Drift
Mobility in Glass-Like Selenium
Doped with S, Òå and As
S. D. Baranovsky, E. A. Lebedev
|
1035 |
|
|
Gallium-Phosphide Luminescence Spectra due
to Impurity Complexes of Nitrogen-Atom Pairs with Acceptors
E. Yu. Baranova, N. R. Nurtdinov, A. I. Yunovich
|
1039 |
|
|
Special Features of Recombination
in Amorphous Hydrogenized Silicon
L. A. Balagurov, Ya. Ya. Kyutte, È. M. Omel'yanovskii, S. A. Ostashko, L. E. Stys, M. G. Foigel
|
1046 |
|
|
Quasi-Classical Quantization
of Acceptor Levels in Ge-Type Semiconductors
B. L. Gel'mont, A. D. Mirlin, V. I. Perel
|
1052 |
|
|
On the Jahn–Teller Center in Pb$_{1-x}$Sn$_{x}$Te
I. I. Zasavitskii, K. Lishka, Kh. Khainrikh
|
1058 |
|
|
Kinetics of Collisional
Ionization of Shallow Impurity Centers in Germanium
Z. S. Asnina, B. E. Mezhebovskii, L. G. Paritsky
|
1064 |
|
|
Special Features of the Character of Temperature Dependence of Conduction
in the Melts of Systems Produced by Copper and Silver Chalcogenides of the Same Names
V. M. Glazov, A. S. Burkhanov
|
1070 |
|
|
Photoelectric Properties of In- and Ge-Doped Liquid Selenium
A. A. Aivazov, B. G. Budagyan
|
1074 |
|
|
Luminescence of (GaAl)P Layers Elastically
and Plastically Deformed in Heteroepitaxy
V. N. Bessolov, E. S. Dobrynina, M. V. Lebedev, V. I. Petrov, B. V. Tsarenkov, Yu. P. Yakovlev
|
1078 |
|
|
Surface-Barrier Structures Based on GaAs$_{1-x-y}$Sb$_{x}$P$_{y}$ Solid Solutions
A. Ya. Vul', P. G. Petrosian
|
1081 |
|
|
Study of Deep-Center Density in Cathode-Sputtered SiO$_x$ Films Depending
on the Degree of Silicon Oxidation
A. A. Lebedev, V. Ekke
|
1087 |
|
|
Spectral Criteria of Free-Exciton
Lifetime Evaluation
V. V. Travnikov, V. V. Krivolapchuk
|
1092 |
|
|
Negative Magnetoresistance
in Two-Dimensional Electron Gas
at Germanium Surface
G. M. Gusev, Z. D. Kvon, A. I. Korchagin, I. G. Neizvestnyi, V. N. Ovsyuk
|
1100 |
|
|
To the Problem of Variation of Shallow-Impurity Compensation Degree under Isovalent Doping of Gallium
Arsenide
Yu. F. Birulin, N. V. Ganinia, V. V. Chaldyshev, Yu. V. Shmartsev
|
1104 |
|
|
Auger Profiles of Composition and Luminescent Studies
of Liquid-Phase InGaAsP Heterostructures with Active Regions ${(1.5\div5)\cdot10^{-6}}$ cm
Z. I. Alferov, D. Z. Garbuzov, I. N. Arsent'ev, B. Ya. Ber, L. S. Vavilova, V. V. Krasovskii, A. V. Chudinov
|
1108 |
|
|
$0.677 \mu m$ – Continuous Injection InGaAsP/GaAsP DH Laser with Selective Limitation
Produced by Liquid Epitaxy
Z. I. Alferov, I. N. Arsent'ev, L. S. Vavilova, D. Z. Garbuzov, V. V. Krasovskii, A. V. Tikunov, V. P. Chalyi
|
1115 |
|
|
Short Notes
|
|
|
Effect of a Magnetic Field on Photoeffect
of Schottky Diodes Based on $p$-Type InAs
Yu. G. Malinin, S. V. Slobodchikov, G. M. Filaretova, V. M. Fetisova
|
1119 |
|
|
Temperature Dependence of Lifetime in
Pure Germanium
B. M. Ashkinadze, N. R. Tevs
|
1122 |
|
|
Effect of Inhomogeneous Auger Heating on Intrinsic
Photoconduction of Cd$_{x}$Hg$_{1-x}$Te Type Semiconductors
V. D. Pischalko
|
1124 |
|
|
Photoconduction Spectra of Cadmium/Phosphide Single Crystals
S. I. Radautsan, V. I. Morozova, A. F. Knyazev, L. S. Koval, È. K. Arushanov, A. N. Nateprov
|
1127 |
|
|
Photoinduced Processes in the System
of $n^{+}{-}n$-Si$-$Bi$_{2}$O$_{3}{-}$Electrolyte
S. K. Poznyak, A. I. Kulak
|
1128 |
|
|
Photomagnetic Effect in Tellurium
at Low Temperatures
E. A. Vinogradov, S. V. Demishev, Y. V. Kosichkin, Yu. A. Polyakov
|
1131 |
|
|
Influence of an Electric Field on Magnetoresistive
Effect in Lightly Doped Gallium Arsenide
M. S. Kamara, M. G. Lukashevich, V. F. Stel'makh
|
1134 |
|
|
Electric
and Photoelectric Properties of GaS$_{0.4}$Se$_{0.6}{-}$InSe Heterojunctions
A. G. Kyazymzade, Z. S. Samedov, F. A. Gasanova, V. I. Tagirov
|
1136 |
|
|
Experimental Evaluation of Semi-Space Criterium in the Unsteady
Mode of Thermoelectric Cooling
E. K. Iordanishvili, A. A. Kodirov
|
1139 |
|
|
Trapping of Holes in Semiconductors with Dislocations
in Crossed Electric and Quantizing Magnetic Fields
Z. A. Veliev
|
1141 |
|
|
On the Photostimulated
Defect Formation in Semiconductors
V. L. Malevich
|
1143 |
|
|
On the Calculation of
Donor Levels in Chalcopyrites
A. I. Gubanov
|
1145 |
|
|
Special Features of Electron Transfer
in Heterostructures with Selective
Doping
A. V. Garmatin, A. A. Kal'fa
|
1147 |
|
|
Effect of Micro defects on Carrier Lifetime
in Thermally Treated Silicon
G. I. Voronkova, T. Nazarov
|
1150 |
|
|
Gap Width of ÐbÒå$-$SnS Films
E. E. Matyas, T. E. Borisenko
|
1152 |
|
|
Oscillations in Photocurrent Spectrum
of a Variband $p{-}n$ Structure due to Photon Drift of Excess Charge
Carriers
A. S. Volkov, B. G. Plyaskin
|
1153 |
|
|
Evaluation of the Profile of
Silicon Oxidation-Degree Distribution
in Si$-$SiO$_{2}$ Transient Layers
K. S. Daliev, A. A. Lebedev, V. Ekke
|
1156 |
|
|
Interaction
of Oxygen with Manganese in $n$-Si
K. P. Abdurakhmanov, R. F. Vitman, K. S. Daliev, A. A. Lebedev, Sh. B. Utemuradova
|
1158 |
|
|
Effect of High Hydrostatic Pressure on Activation Energy of Mn Levels in $n$-Òóðå Si
Yu. F. Shulpyakov, A. A. Lebedev, K. P. Abdurakhmanov, Sh. B. Utemuradova
|
1159 |
|
|
Properties of
Oxygen- and Chromium-Doped
Indium Phosphide
L. F. Zakharenkov, V. F. Masterov, B. E. Samorukov
|
1161 |
|
|
Increase of Concentration of Luminescence-Quenching
Centers under the Annealing of Electron-Irradiated Gallium-Arsenide Crystals
K. D. Glinchuk, V. I. Guroshev, A. V. Prokhorovich
|
1163 |
