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Electronic properties of semiconductors
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Superionic conductivity of (TlGaSe$_{2}$)$_{1-x}$(TlInS$_{2}$)$_{x}$ solid solutions
R. M. Sardarly, A. P. Abdullayev, N. A. Aliyeva, F. T. Salmanov, M. Y. Yusifov, A. A. Orudjeva
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1111 |
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Spectroscopy, interaction with radiation
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Formation of luminescence spectra and emission intensity in the UV and visible spectral regions for $n$-ZnO/$p$-GaN and $n$-ZnO/$p$-ZnO structures when depositing ZnO films by high-frequency magnetron sputtering
M. M. Mezdrogina, A. Ya. Vinogradov, Yu. V. Kozhanova
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1115 |
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Luminescence and stimulated emission of polycrystalline Cu(In,Ga)Se$_{2}$ films deposited by magnetron-assisted sputtering
I. E. Svitsiankou, V. N. Pavlovskii, E. V. Lutsenko, G. P. Yablonskii, V. Y. Shiripov, E. A. Khokhlov, A. V. Mudryi, V. D. Zhivulko, O. M. Borodavchenko, M. V. Yakushev
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1120 |
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Semiconductor structures, low-dimensional systems, quantum phenomena
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Recombination in GaAs $p$-$i$-$n$ structures with InGaAs quantum-confined objects: modeling and regularities
M. A. Mintairov, V. V. Evstropov, S. A. Mintairov, R. A. Salii, M. Z. Shvarts, N. A. Kalyuzhnyy
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1126 |
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Multilayer quantum well–dot InGaAs heterostructures in GaAs-based photovoltaic converters
S. A. Mintairov, N. A. Kalyuzhnyy, A. M. Nadtochiy, M. V. Maksimov, V. N. Nevedomskiy, L. A. Sokura, S. S. Ruvimov, M. Z. Shvarts, A. E. Zhukov
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1131 |
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Amorphous, glassy, organic semiconductors
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Effect of the temporal characteristics of modulated DC plasma with the (SiH$_{4}$–Ar–O$_{2}$) gas phase on ncl-Si growth in an$a$-SiO$_{x}$:H matrix (C$_{\mathrm{O}_2}$ = 15.5 mol %)
Yu. K. Undalov, E. I. Terukov, I. N. Trapeznikova
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1137 |
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Micro- and nanocrystalline, porous, composite semiconductors
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Simulation of electron and hole states in Si nanocrystals in a SiO$_{2}$ matrix: choice of parameters of the empirical tight-binding method
A. V. Belolipetskiy, M. O. Nestoklon, I. N. Yassievich
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1145 |
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Semiconductor physics
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Impact of the periphery electrostatic field on the photovoltaic effect in metal–semiconductor contacts with a Schottky barrier
N. A. Torkhov
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1150 |
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Luminescence spectra of high-power violet and ultraviolet gallium nitride-based LEDs
V. V. Volkov, L. M. Kogan, A. N. Turkin, A. I. Yunovich
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1172 |
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Analysis of the features of hot-carrier degradation in FinFETs
A. A. Makarov, S. È. Tyaginov, B. Kaczer, M. Jech, A. Chasin, A. Grill, G. Hellings, M. I. Vexler, D. Linten, T. Grasser
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1177 |
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Determining the hydrogen concentration from the photovoltage of Pd–oxide–InP MIS structures
E. A. Grebenshchikova, Kh. M. Salikhov, V. G. Sidorov, V. A. Shutaev, Yu. P. Yakovlev
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1183 |
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Effect of low-dose proton irradiation on the electrical characteristics of 4$H$-SiC junction diodes
P. A. Ivanov, A. S. Potapov, M. F. Kudoyarov, T. P. Samsonova
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1187 |
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Effect of epitaxial-structure design and growth parameters on the characteristics of metamorphic lasers of the 1.46-$\mu$m optical range based on quantum dots grown on GaAs substrates
M. V. Maksimov, A. M. Nadtochiy, Yu. M. Shernyakov, A. S. Payusov, A. P. Vasil'ev, V. M. Ustinov, A. A. Serin, N. Yu. Gordeev, A. E. Zhukov
|
1191 |
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Specific features of the IR reflectance and Raman spectra of Sb$_{2}$Te$_{3-x}$Se$_{x}$ crystals
S. A. Nemov, V. D. Andreeva, Yu. V. Ulashkevich, A. V. Povolotskiy, A. A. Allahkhah
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1197 |
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Manufacturing, processing, testing of materials and structures
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On the growth of FeIn$_{2}$S$_{2}$Se$_{2}$ single crystals and the study of their properties
I. V. Bondar', S. A. Detkov, Yu. V. Kasyuk, Yu. A. Fedotova
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1203 |
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Influence of the synthesis conditions and tin nanoparticles on the structure and properties of $a$-С:Н$\langle$Sn$\rangle$ composite thin films
A. P. Ryaguzov, R. R. Nemkayeva, N. R. Guseinov
|
1207 |
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Copper(I) selenide thin films: composition, morphology, structure, and optical properties
L. N. Maskaeva, E. A. Fedorova, V. F. Markov, M. V. Kuznetsov, O. A. Lipina, A. V. Pozdin
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1213 |
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Positive charge in SOS heterostructures with interlayer silicon oxide
V. P. Popov, V. A. Antonov, V. I. Vdovin
|
1220 |
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Study of the effective refractive index profile in self-assembling nanostructured ITO films
L. K. Markov, A. S. Pavluchenko, I. Yu. Smirnova, S. I. Pavlov
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1228 |
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Selective epitaxial growth of III–N structures using ion-beam nanolithography
V. V. Lundin, A. F. Tsatsul'nikov, S. N. Rodin, A. V. Sakharov, S. O. Usov, M. I. Mitrofanov, Ya. V. Levitskii, V. P. Evtikhiev
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1237 |
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Nanostructure growth in the Ga(In)AsP–GaAs system under quasi-equilibrium conditions
L. B. Karlina, A. S. Vlasov, I. P. Soshnikov, I. P. Smirnova, B. Ya. Ber, A. B. Smirnov
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1244 |
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Personalia
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Памяти Константина Дамдиновича Цэндина (15.09.1942–04.04.2018)
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1250 |
