Fizika i Tekhnika Poluprovodnikov, 2018, Volume 52, Issue 11

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2018, Volume 52, Issue 11

	К столетию Физико-технического института имени А. Ф. Иоффе	1255

XXII International symposium ''Nanophysics and Nanoelectronics'', Nizhny novgorod, March, 12-15, 2018
	Calculation of multiply charged states of impurity-defect centers in epitaxial Hg$_{1-x}$Cd$_{x}$Te layers D. V. Kozlov, V. V. Rumyantsev, S. V. Morozov, A. M. Kadykov, M. A. Fadeev, H.-W. Hübers, V. I. Gavrilenko	1257
	Effect of features of the band spectrum on the characteristics of stimulated emission in narrow-gap heterostructures with HgCdTe quantum wells V. V. Rumyantsev, N. S. Kulikov, A. M. Kadykov, M. A. Fadeev, A. V. Ikonnikov, A. S. Kazakov, M. S. Zholudev, V. Ya. Aleshkin, V. V. Utochkin, N. N. Mikhailov, S. A. Dvoretskii, S. V. Morozov, V. I. Gavrilenko	1263
	Temperature dependences of the threshold current and output power of a quantum-cascade laser emitting at 3.3 THz R. A. Khabibullin, N. V. Shchavruk, D. S. Ponomarev, D. V. Ushakov, A. A. Afonenko, I. S. Vasil'evskii, A. A. Zaitsev, A. I. Danilov, O. Yu. Volkov, V. V. Pavlovskiy, K. V. Marem'yanin, V. I. Gavrilenko	1268
	Magnetooptics of HgTe/CdTe quantum wells with giant rashba splitting in magnetic fields up to 34 T L. S. Bovkun, K. V. Marem'yanin, A. V. Ikonnikov, K. E. Spirin, V. Ya. Aleshkin, M. Potemski, B. Piot, M. Orlita, N. N. Mikhailov, S. A. Dvoretskii, V. I. Gavrilenko	1274
	Spinodal decomposition in InSb/AlAs heterostructures D. S. Abramkin, A. K. Bakarov, A. K. Gutakovskii, T. S. Shamirzaev	1280
	The effect of the composition of a carrier gas during the growth of a Mn delta-layer on the electrical and magnetic properties of GaAs structures I. L. Kalentyeva, O. V. Vikhrova, Yu. A. Danilov, B. N. Zvonkov, A. V. Kudrin, I. N. Antonov	1286
	“Extremum loop” model for the valence-band spectrum of a HgTe/HgCdTe quantum well with an inverted band structure in the semimetallic phase S. V. Gudina, A. S. Bogolubskii, V. N. Neverov, N. G. Shelushinina, M. V. Yakunin	1291
	Application of the locally nonequilibrium diffusion-drift Cattaneo–Vernotte model to the calculation of photocurrent relaxation in diode structures under subpicosecond pulses of ionizing radiation A. S. Puzanov, S. V. Obolensky, V. A. Kozlov	1295
	Investigation of the anisotropy of the structural properties of GaN(0001) layers grown by MOVPE on $a$-plane (11$\bar2$0) sapphire P. A. Yunin, Yu. N. Drozdov, O. I. Khrykin, V. A. Grigoryev	1300
	Phosphorus-based nanowires grown by molecular-beam epitaxy on silicon G. E. Cirlin, R. R. Reznik, Yu. B. Samsonenko, A. I. Khrebtov, K. P. Kotlyar, I. V. Ilkiv, I. P. Sotnikov, D. A. Kirilenko, N. V. Kryzhanovskaya	1304
	Experimental study of spontaneous-emission enhancement in Tamm plasmon structures with an organic active region K. M. Morozov, K. A. Ivanov, N. Selenin, S. Mikhrin, D. De Sa Pereira, C. Menelaou, A. P. Monkman, M. A. Kaliteevskii	1308
	Modification of the ferromagnetic properties of Si$_{1-x}$Mn$_{x}$ thin films synthesized by pulsed laser deposition with a variation in the buffer-gas pressure O. A. Novodvorskii, V. A. Mikhalevskii, D. S. Gusev, A. A. Lotin, L. S. Parshina, O. D. Khramova, E. A. Cherebylo, A. B. Drovosekov, V. V. Ryl'kov, S. N. Nikolaev, K. Yu. Chernoglazov, K. I. Maslakov	1313
	MBE growth and structural properties of GaP and InP nanowires on a SiC substrate with a graphene layer R. R. Reznik, K. P. Kotlyar, I. V. Ilkiv, I. P. Soshnikov, S. P. Lebedev, A. A. Lebedev, D. A. Kirilenko, P. A. Alekseev, G. E. Cirlin	1317
	Study of the structural and morphological properties of HPHT diamond substrates P. A. Yunin, P. V. Volkov, Yu. N. Drozdov, A. V. Koliadin, S. A. Korolev, D. B. Radishev, E. A. Surovegina, V. I. Shashkin	1321
	Spectroscopy of single AlInAs and (111)-oriented InGaAs quantum dots I. A. Derebezov, V. A. Gaisler, A. V. Gaisler, D. V. Dmitriev, A. I. Toropov, M. Von Helversen, C. De la Haye, S. Bounouar, S. Reitzenstein	1326
	Formation and properties of locally tensile strained Ge microstructures for silicon photonics A. V. Novikov, D. V. Yurasov, E. E. Morozova, E. V. Skorokhodov, V. A. Verbus, A. N. Yablonskii, N. A. Baidakova, N. S. Gusev, K. E. Kudryavtsev, A. V. Nezhdanov, A. I. Mashin	1331
	Radiation resistance of terahertz diodes based on GaAs/AlAs superlattices D. G. Pavel'ev, A. P. Vasil'ev, V. A. Kozlov, E. S. Obolenskaya	1337
	Nucleation of three-dimensional Ge islands on a patterned Si(100) surface S. A. Rudin, Zh. V. Smagina, V. A. Zinov'ev, P. L. Novikov, A. V. Nenashev, E. E. Rodyakina, A. V. Dvurechenskii	1346
	Reduction of internal loss and thermal resistance in diode lasers with coupled waveguides A. E. Zhukov, N. Yu. Gordeev, Yu. M. Shernyakov, A. S. Payusov, A. A. Serin, M. M. Kulagina, S. A. Mintairov, N. A. Kalyuzhnyy, M. V. Maksimov	1351
	Gapless Dirac electron mobility and quantum time in HgTe quantum wells A. A. Dobretsova, Z. D. Kvon, L. S. Braginskii, M. V. Èntin, N. N. Mikhailov	1357
	Plasma chemical etching of gallium arsenide in C$_{2}$F$_{5}$Cl-based inductively coupled plasma A. I. Okhapkin, P. A. Yunin, M. N. Drozdov, S. A. Kraev, E. V. Skorokhodov, V. I. Shashkin	1362
	Development of a physical-topological model for the response of a high-power vertical DMOS transistor to the effect of pulsed gamma-radiation A. V. Khananova, S. V. Obolensky	1366
	Heterostructures with InAs/AlAs quantum wells and quantum dots grown on GaAs/Si hybrid substrates D. S. Abramkin, M. O. Petrushkov, M. A. Putyato, B. R. Semyagin, T. S. Shamirzaev	1373
	Verification of the hypothesis on the thermoelastic nature of deformation of $a$(0001)GaN layer grown on the sapphire $a$-cut Yu. N. Drozdov, O. I. Khrykin, P. A. Yunin	1380
	Stimulated emission in the 1.3–1.5 $\mu$m spectral range from AlGaInAs quantum wells in hybrid light-emitting III–V heterostructures on silicon substrates K. E. Kudryavtsev, A. A. Dubinov, V. Ya. Aleshkin, D. V. Yurasov, P. V. Gorlachuk, Yu. L. Ryaboshtan, A. A. Marmalyuk, A. V. Novikov, Z. F. Krasil'nik	1384
	Multiphonon intracenter relaxation of boron acceptor states in diamond N. A. Bekin	1390