Fizika i Tekhnika Poluprovodnikov, 2018, Volume 52, Issue 12

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2018, Volume 52, Issue 12

	К столетию со дня рождения профессора С. М. Рывкина (1918–1981)	1399

XXII International symposium ''Nanophysics and Nanoelectronics'', Nizhny novgorod, March, 12-15, 2018
	Field effect in PbSnTe : In films with low conductivity in the mode of injection from contacts and space-charge limitation of the current A. N. Akimov, A. E. Klimov, V. S. Epov	1401
	Formation of a graphene-like SiN layer on the surface Si(111) V. G. Mansurov, Yu. G. Galitsyn, T. V. Malin, S. A. Teys, E. V. Fedosenko, A. S. Kozhukhov, K. S. Zhuravlev, Ildikó Cora, Béla Pécz	1407
	Analysis of the behavior of nonequilibrium semiconductor structures and microwave transistors during and after pulsed $\gamma$- and $\gamma$-neutron irradiation M. M. Venediktov, E. A. Tarasova, A. D. Bozhen'kina, S. V. Obolensky, V. V. Elesin, G. V. Chukov, I. O. Metelkin, M. A. Krevskiy, D. I. Dyukov, A. G. Fefelov	1414
	Relation between the electronic properties and structure of InAs/GaAs quantum dots grown by vapor-phase epitaxy A. P. Gorshkov, N. S. Volkova, D. A. Pavlov, Yu. V. Usov, L. A. Istomin, S. B. Levichev	1421
	Features of the initial stage of GaN growth on Si(111) substrates by nitrogen-plasma-assisted molecular-beam epitaxy A. M. Mizerov, S. N. Timoshnev, M. S. Sobolev, E. V. Nikitina, K. Yu. Shubina, T. N. Berezovskaya, I. V. Shtrom, A. D. Bouravlev	1425
	Electrical tunability of terahertz amplification in a periodic plasmon graphene structure with charge-carrier injection O. V. Polishchuk, D. V. Fateev, V. V. Popov	1430
	Behavioral features of MIS memristors with a Si$_{3}$N$_{4}$ nanolayer fabricated on a conductive Si substrate S. V. Tikhov, O. N. Gorshkov, I. N. Antonov, D. I. Tetelbaum, A. N. Mikhaylov, A. I. Belov, A. I. Morozov, P. Karakolis, P. Dimitrakis	1436
	On the application of strain-compensating GaAsP layers for the growth of InGaAs/GaAs quantum-well laser heterostructures emitting at wavelengths above 1100 nm on artificial Ge/Si substrates N. V. Baidus, V. Ya. Aleshkin, A. A. Dubinov, Z. F. Krasil'nik, K. E. Kudryavtsev, S. M. Nekorkin, A. V. Novikov, A. V. Rykov, D. G. Reunov, M. V. Shaleev, P. A. Yunin, D. V. Yurasov	1443
	Nonuniversal scaling behavior of conductivity peak widths in the quantum Hall effect in InGaAs/InAlAs structures S. V. Gudina, Yu. G. Arapov, E. V. Ilchenko, V. N. Neverov, A. P. Savelyev, S. M. Podgornykh, N. G. Shelushinina, M. V. Yakunin, I. S. Vasil'evskii, A. N. Vinichenko	1447
	Production of Si- and Ge-based thermoelectric materials by spark plasma sintering I. V. Erofeeva, M. V. Dorokhin, A. V. Zdoroveyshchev, Yu. M. Kuznetsov, A. A. Popov, E. A. Lantsev, A. V. Boryakov, V. E. Kotomina	1455
	Photodetectors with an InGaP active region and InGaP metamorphic buffer layer grown on GaAs substrates I. V. Samartsev, S. M. Nekorkin, B. N. Zvonkov, V. Ya. Aleshkin, A. A. Dubinov, I. Yu. Pashen'kin, N. V. Dikareva, A. B. Chigineva	1460
	Solar cell based on core/shell nanowires N. V. Sibirev, K. P. Kotlyar, A. A. Koryakin, I. V. Shtrom, E. V. Ubyivovk, I. P. Soshnikov, R. R. Reznik, A. D. Bouravlev, G. E. Cirlin	1464
	On the intracenter relaxation of shallow arsenic donors in stressed germanium. Population inversion under optical excitation V. V. Tsyplenkov, V. N. Shastin	1469
	Singularity of the density of states and transport anisotropy in a two-dimensional electron gas with spin-orbit interaction in an in-plane magnetic field V. A. Sablikov, Yu. Ya. Tkach	1477
	Bipolar persistent photoconductivity in HgTe/CdHgTe (013) double quantum-well heterostructures K. E. Spirin, D. M. Gaponova, K. V. Marem'yanin, V. V. Rumyantsev, V. I. Gavrilenko, N. N. Mikhailov, S. A. Dvoretskii	1482
	Terahertz injection lasers based on a PbSnSe solid solution with an emission wavelength up to 50 $\mu$m and their application in the magnetospectroscopy of semiconductors K. V. Marem'yanin, A. V. Ikonnikov, L. S. Bovkun, V. V. Rumyantsev, E. G. Chizhevskii, I. I. Zasavitskii, V. I. Gavrilenko	1486

Semiconductor structures, low-dimensional systems, quantum phenomena
	All-electric laser beam control based on a quantum-confined heterostructure with an integrated distributed Bragg grating I. S. Shashkin, O. S. Soboleva, P. S. Gavrina, V. V. Zolotarev, S. O. Slipchenko, N. A. Pikhtin	1491
	Ridge waveguide structure for lattice-matched quantum cascade lasers V. V. Mamutin, N. D. Il'inskaya, A. A. Usikova, A. V. Lyutetskiy	1499

Amorphous, glassy, organic semiconductors
	Estimation of the temperature of the current filament that forms upon switching in GeSbTe S. A. Fefelov, L. P. Kazakova, N. A. Bogoslovskii, K. D. Tsendin	1503

Micro- and nanocrystalline, porous, composite semiconductors
	Electrical properties of GaAs nanowires grown on graphene/SiC hybrid substrates P. A. Alekseev, M. S. Dunaevskii, A. O. Mikhailov, S. P. Lebedev, A. A. Lebedev, I. V. Ilkiv, A. I. Khrebtov, A. D. Bouravlev, G. E. Cirlin	1507

Carbon systems
	Transition between electron localization and antilocalization and manifestation of the Berry phase in graphene on a SiC surface N. V. Agrinskaya, A. A. Lebedev, S. P. Lebedev, M. A. Shakhov, E. Lahderanta	1512

Semiconductor physics
	Violation of local electroneutrality in the quantum well of a semiconductor laser with asymmetric barrier layers L. V. Asryan, F. I. Zubov, Yu. S. Balezina (Polubavkina), È. I. Moiseev, M. E. Muretova, N. V. Kryzhanovskaya, M. V. Maksimov, A. E. Zhukov	1518
	Avalanche breakdown stability of high voltage (1430 V) 4$H$-SiC $p^{+}$–$n_{0}$–$n^{+}$ diodes P. A. Ivanov, T. P. Samsonova, A. S. Potapov	1527
	Galvanic and capacitive effects in $n$-SiC conductivity compensation by radiation-induced defects V. V. Kozlovsky, A. A. Lebedev, K. S. Davydovskaja, Yu. V. Lubimova	1532

Manufacturing, processing, testing of materials and structures
	Electrical properties of indium-oxide thin films produced by plasma-enhanced reactive thermal evaporation A. S. Ilyin, A. N. Matsukatova, P. A. Forsh, Yu. Vygranenko	1535