Fizika i Tekhnika Poluprovodnikov, 2018, Volume 52, Issue 13

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2018, Volume 52, Issue 13

Non-electronic properties of semiconductors (atomic structure, diffusion)
	Mccurdy's effects in the thermal conductivity of elastically anisotropic crystals in the mode of Knudsen phonon-gas flow I. G. Kuleyev, I. I. Kuleyev, S. M. Bakharev	1543
	Effect of a $por$-Si buffer layer on the structure and morphology of epitaxial In$_{x}$Ga$_{1-x}$N/Si(111) heterostructures P. V. Seredin, D. L. Goloshchapov, D. S. Zolotukhin, M. A. Kondrashin, A. S. Len'shin, Yu. Yu. Khudyakov, A. M. Mizerov, I. N. Arsent'ev, A. N. Beltyukov, Harald Leiste, M. Rinke	1553

Electronic properties of semiconductors
	Features of the electron mobility in the $n$-InSe layered semiconductor A. Sh. Abdinov, R. F. Babayeva	1563
	Measurement of the charge-carrier mobility in gallium arsenide using a near-field microwave microscope by the microwave-magnetoresistance method D. A. Usanov, A. È. Postelga, A. A. Kalyamin, I. V. Sharov	1570
	Conduction-electron spin resonance in HgSe crystals A. I. Veinger, I. V. Kochman, V. I. Okulov, M. D. Andriichuk, L. D. Paranchich	1573
	Interaction rates of group-III and group-V impurities with intrinsic point defects in irradiated Si and Ge V. V. Emtsev, N. V. Abrosimov, V. V. Kozlovski, D. S. Poloskin, G. A. Oganesyan	1578

Spectroscopy, interaction with radiation
	Intracenter radiative transitions at tantalum impurity centers in cadmium telluride V. V. Ushakov, D. F. Aminev, V. S. Krivobok	1579

Surface, interfaces, thin films
	Optical studies of heat transfer in PbTe : Bi(Sb) thin films E. V. Ivakin, I. G. Kisialiou, L. I. Nykyruy, Y. S. Yavorskyy	1584
	Redistribution of erbium and oxygen recoil atoms and the structure of silicon thin surface layers formed by high-dose argon implantation through Er and SiO$_{2}$ surface films K. V. Feklistov, A. G. Cherkov, V. P. Popov, L. I. Fedina	1589

Semiconductor structures, low-dimensional systems, quantum phenomena
	Diffusion blurring of GaAs quantum wells grown at low temperature V. I. Ushanov, V. V. Chaldyshev, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin	1597

Amorphous, glassy, organic semiconductors
	Specific features of the electron structure of ZnTPP aggregated forms: data of optical measurements and quantum-chemical calculations I. B. Zakharova, M. A. Elistratova, N. M. Romanov, O. E. Kvyatkovskii	1601

Micro- and nanocrystalline, porous, composite semiconductors
	Ab initio study of the ZnSnSb$_2$ semiconductor Yu. M. Basalaev	1608
	Influence of hydrogen peroxide on the photoanodization of $n$-Si in the breakdown mode G. V. Li, E. V. Astrova, A. I. Lihachev	1614

Semiconductor physics
	Charge accumulation in MOS structures with a polysilicon gate under tunnel injection O. V. Aleksandrov, A. N. Ageev, S. I. Zolotarev	1625
	Impact of the device geometric parameters on hot-carrier degradation in FinFETs S. È. Tyaginov, A. A. Makarov, B. Kaczer, M. Jech, A. Chasin, A. Grill, G. Hellings, M. I. Vexler, D. Linten, T. Grasser	1631
	NBn-photodiode based on InAsSb/AlAsSb alloys with a long-wavelength cutoff of 5 $\mu$m V. B. Kulikov, D. V. Maslov, A. R. Sabirov, A. A. Solodkov, A. L. Dudin, N. I. Katsavets, I. V. Kogan, I. V. Shukov, V. P. Chalyi	1636
	GaInAsP/InP-based laser power converters ($\lambda$ = 1064 nm) V. P. Khvostikov, S. V. Sorokina, N. S. Potapovich, R. V. Levin, A. E. Marichev, N. Kh. Timoshina, B. V. Pushnii	1641
	AlGaAs/GaAs photovoltaic converters of tritium radioluminescent-lamp radiation V. P. Khvostikov, V. S. Kalinovskii, S. V. Sorokina, M. Z. Shvarts, N. S. Potapovich, O. A. Khvostikova, A. S. Vlasov, V. M. Andreev	1647
	Radiation-induced damage of silicon-carbide diodes by high-energy particles A. M. Strel'chuk, V. V. Kozlovsky, A. A. Lebedev	1651

Manufacturing, processing, testing of materials and structures
	Determination of the region of thermal stability of the size and phase composition of silver-sulfide semiconductor nanoparticles S. I. Sadovnikov, È. G. Vovkotrub	1656
	Features of the selective growth of GaN nanorods on patterned $c$-sapphire substrates of various configurations A. N. Semenov, D. V. Nechaev, S. I. Troshkov, A. V. Nashchekin, P. N. Brunkov, V. N. Zhmerik, S. V. Ivanov	1663
	Precision chemical etching of GaP(NAs) epitaxial layers for the formation of monolithic optoelectronic devices D. A. Kudriashov, A. S. Gudovskikh, A. I. Baranov	1668
	New manufacturing approaches to texture formation and thermal expansion matching in the design of highly efficient silicon solar photoconverters S. E. Nikitin, A. V. Bobyl', N. R. Avezova, E. I. Terukov	1675