Fizika i Tekhnika Poluprovodnikov, 2018, Volume 52, Issue 2

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2018, Volume 52, Issue 2

Non-electronic properties of semiconductors (atomic structure, diffusion)
	Use of the atomic structure of silicon crystals to obtain multi-tip field-emission sources of electrons R. K. Yafarov	147

Electronic properties of semiconductors
	Conductivity of Ga$_{2}$O$_{3}$–GaAs heterojunctions V. M. Kalygina, I. L. Remizova, O. P. Tolbanov	154
	Frequency dependence of the conductivity of disordered semiconductors in the region of the transition to the fixed-range hopping regime M. A. Ormont, I. P. Zvyagin	161
	Dielectric properties and conductivity of Ag-doped TlGaS$_{2}$ single crystals S. N. Mustafaeva, S. M. Asadov, E. M. Kerimova	167
	Electrically active states of charge capture and transfer causing slow recombination in thallium-bromide crystals at low temperatures V. Kazhukauskas, R. Garbačauskas, S. Savicki	171
	Effect of dislocation-related deep levels in heteroepitaxial InGaAs/GaAs and GaAsSb/GaAs $p$–$i$–$n$ structures on the relaxation time of nonequilibrium carriers M. M. Sobolev, F. Yu. Soldatenkov	177

Spectroscopy, interaction with radiation
	Investigation of the far-IR reflection spectra of SmS single crystals and polycrystals in the homogeneity range Yu. V. Ulashkevich, V. V. Kaminskii, M. V. Romanova, N. V. Sharenkova	184
	Effect of heat and plasma treatments on the photoluminescence of zinc-oxide films Kh. A. Abdullin, L. V. Gritsenko, S. E. Kumekov, А. А. Markhabaeva, E. I. Terukov	189

Surface, interfaces, thin films
	Oxygen nitrogen mixture effect on aluminum nitride synthesis by reactive ion plasma deposition Ya. V. Lubyanskiy, A. D. Bondarev, I. P. Sotnikov, N. A. Bert, V. V. Zolotarev, D. A. Kirilenko, K. P. Kotlyar, N. A. Pikhtin, I. S. Tarasov	196

Semiconductor structures, low-dimensional systems, quantum phenomena
	Electron transport in phemt AlGaAs/InGaAs/GaAs РНЕМТ quantum wells at different temperatures: influence of one-side $\delta$-Si doping D. A. Safonov, A. N. Vinichenko, N. I. Kargin, I. S. Vasil'evskii	201
	Intraband radiation absorption by holes in InAsSb/AlSb and InGaAsP/InP quantum wells N. V. Pavlov, G. G. Zegrya, A. G. Zegrya, V. E. Bugrov	207

Amorphous, glassy, organic semiconductors
	Optical properties of tellurium-based chalcogenide alloys in the far infrared region ($\lambda$ > 30 $\mu$m) V. A. Ryzhov, B. T. Melekh	221

Micro- and nanocrystalline, porous, composite semiconductors
	Microstructure and Raman scattering of Cu$_{2}$ZnSnSe$_{4}$ thin films deposited onto flexible metal substrates A. Stanchik, V. F. Gremenok, S. A. Bashkirov, M. S. Tivanov, R. L. Juškėnas, G. F. Novikov, R. Giraitis, A. M. Saad	227
	Change in the character of biaxial stresses with an increase in $x$ from 0 to 0.7 in Al$_{x}$Ga$_{1-x}$N:Si layers obtained by ammonia molecular beam epitaxy V. V. Ratnikov, M. P. Scheglov, B. Ya. Ber, D. Yu. Kazantsev, I. V. Osinnykh, T. V. Malin, K. S. Zhuravlev	233

Carbon systems
	On the extended Holstein–Hubbard model for epitaxial graphene on metal S. Yu. Davydov	238
	Optimization of the parameters of PbSB-based polycrystalline photoresistors B. N. Miroshnikov, I. N. Miroshnikova, A. I. Popov	243

Semiconductor physics
	Graphite/$p$-SiC Schottky diodes prepared by transferring drawn graphite films onto SiC M. N. Solovan, G. O. Andrushchak, A. I. Mostovyi, T. T. Kovaliuk, V. V. Brus, P. D. Mar'yanchuk	248
	Physical principles of self-consistent simulation of the generation of interface states and the transport of hot charge carriers in field-effect transistors based on metal–oxide–semiconductor structures S. È. Tyaginov, A. A. Makarov, M. Jech, M. I. Vexler, J. Franco, B. Kaczer, T. Grasser	254
	Suppression of recombination in the waveguide of a laser heterostructure by means of double asymmetric barriers F. I. Zubov, M. V. Maksimov, N. Yu. Gordeev, Yu. S. Polubavkina, A. E. Zhukov	260

Manufacturing, processing, testing of materials and structures
	Electrical activity of extended defects in multicrystalline silicon S. M. Peshcherova, E. B. Yakimov, A. I. Nepomnyashchikh, L. A. Pavlova, O. V. Feklisova, R. V. Presnyakov	266
	Luminescence properties of Cd$_{x}$Zn$_{1-x}$O thin films A. A. Lotin, O. A. Novodvorskii, L. S. Parshina, O. D. Khramova, E. A. Cherebylo, V. A. Mikhalevskii	272
	Effect of the addition of silicon on the properties of germanium single crystals for IR optics A. F. Shimanskii, T. O. Pavlyuk, S. A. Kopytkova, R. A. Filatov, A. N. Gorodishcheva	276
	Ion-beam synthesis of the crystalline Ge phase in SiO$_{x}$N$_{y}$ films upon annealing under high pressure I. E. Tyschenko, G. K. Krivyakin, V. A. Volodin	280

Personalia
	Захарий Фишелевич Красильник (к 70-летию со дня рождения) A. V. Gaponov, G. G. Denisov, A. G. Zabrodskii, A. G. Litvak, E. A. Mareev, N. N. Salashchenko, A. M. Sergeev, R. A. Suris, E. A. Khazanov, V. L. Vaks, V. I. Gavrilenko, V. V. Kurin, A. A. Fraerman, N. I. Chkhalo, V. I. Shashkin	285