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Electronic properties of semiconductors
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Electrical breakdown in pure $n$- and $p$-Si
V. F. Bannaya, E. V. Nikitina
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291 |
|
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Isoelectronic oxygen centers and conductivity of CdS crystals compared with PbS crystals
N. K. Morozova, B. N. Miroshnikov
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295 |
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Electronic structure of four-element clathrates of the Ba–Zn–Si–Ge system
N. A. Borshch, S. I. Kurganskii
|
299 |
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Optical transitions in ZnSe and CdTe crystals with involvement of the cation $d$ bands
V. V. Sobolev, D. A. Perevoshchikov
|
304 |
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Mechanism of the generation of donor–acceptor pairs in heavily doped $n$-ZrNiSn with the Ga acceptor impurity
V. A. Romaka, P. -F. Rogl, D. Frushart, D. Kaczorowski
|
311 |
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Deep radiation-induced defect centers created by a fast neutron flux in CdZnTe single crystals
S. V. Plyatsko, L. V. Rashkovetskyi
|
322 |
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Formation of radiation defects by proton braking in lightly doped $n$- and $p$-SiC layers
V. V. Kozlovsky, A. È. Vasil'ev, P. A. Karaseov, A. A. Lebedev
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327 |
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Surface, interfaces, thin films
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Surface nanostructures forming during the early stages of the metal-assisted chemical etching of silicon. Optical properties of silver nanoparticles
Yu. A. Zharova, V. A. Tolmachev, A. I. Bednaya, S. I. Pavlov
|
333 |
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Influence of the thermal conditions of fabrication and treatment on the optical properties of In$_{2}$O$_{3}$ films
A. A. Tikhii, Yu. M. Nikolaenko, Yu. I. Zhikhareva, A. S. Korneevets, I. V. Zhikharev
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337 |
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Micro- and nanocrystalline, porous, composite semiconductors
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Specific features of the optical characteristics of porous silicon and their modification by chemical treatment of the surface
A. S. Len'shin
|
342 |
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Effect of low $\gamma$-radiation doses on the optical properties of porous silicon
D. I. Bilenko, O. Ya. Belobrovaya, D. V. Terin, V. V. Galushka, I. V. Galushka, A. E. Zharkova, V. P. Polyanskaya, V. I. Sidorov, I. T. Yagudin
|
349 |
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Carbon systems
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Electron–electron and electron–phonon interactions in graphene on a semiconductor substrate: simple estimations
S. Yu. Davydov
|
353 |
|
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Semiconductor physics
|
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Optimal doping of diode current interrupters
A. S. Kyuregyan
|
359 |
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Schottky-barrier model nonlinear in surface-state concentration and calculation of the I–V characteristics of diodes based on SiC and its solid solutions in the composite charge-transport model
V. I. Altukhov, A. V. Sankin, A. S. Sigov, D. K. Sysoev, È. G. Yanukyan, S. V. Filippova
|
366 |
|
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Field-effect transistor based on the proton conductivity of graphene oxide and nafion films
V. A. Smirnov, A. D. Mokrushin, N. N. Denisov, Yu. A. Dobrovolsky
|
370 |
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Mechanism and behavior of the light flux decrease in light-emitting diodes based on AlGaN/InGaN/GaN structures with quantum wells upon prolonged direct-current flow of various densities
F. I. Manyakhin
|
378 |
|
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Modification of photovoltaic laser-power ($\lambda$ = 808 nm) converters grown by LPE
V. P. Khvostikov, S. V. Sorokina, N. S. Potapovich, O. A. Khvostikova, N. Kh. Timoshina, M. Z. Shvarts
|
385 |
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Influence of heat dissipation conditions on the characteristics of concentrator photoelectric modules
A. V. Andreeva, N. Yu. Daviduk, D. A. Malevskii, A. N. Panchak, N. A. Sadchikov, A. V. Chekalin
|
390 |
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Manufacturing, processing, testing of materials and structures
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Photoluminescence studies of Si-doped epitaxial GaAs films grown on (100)- and (111)A-oriented GaAs substrates at lowered temperatures
G. B. Galiev, E. A. Klimov, A. N. Klochkov, S. S. Pushkarev, P. P. Maltsev
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395 |
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Formation of Cu$_{2}$O and ZnO crystal layers by magnetron assisted sputtering and their optical characterization
V. F. Agekyan, E. V. Borisov, A. S. Gudovskikh, D. A. Kudriashov, A. O. Monastyrenko, A. Yu. Serov, N. G. Filosofov
|
402 |
|
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Formation of a stepped Si(100) surface and its effect on the growth of Ge islands
M. Yu. Yesin, A. I. Nikiforov, V. A. Timofeev, A. R. Tuktamyshev, V. I. Mashanov, I. D. Loshkarev, A. S. Deryabin, O. P. Pchelyakov
|
409 |
|
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Formation of macropores in $n$-Si upon anodization in an organic electrolyte
E. V. Astrova, N. E. Preobrazhenskii, G. V. Li, S. I. Pavlov
|
414 |
