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Electronic properties of semiconductors
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AC electrical conductivity of FeIn$_{2}$Se$_{4}$ single crystals
N. N. Niftiyev, F. M. Mammadov, V. I. Quseynov, S. Sh. Kurbanov
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535 |
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Contribution of iron clusters to the magnetic properties of Pb$_{1-y}$Fe$_{y}$Te alloys
E. P. Skipetrov, A. A. Solov'ev, V. E. Slynko
|
538 |
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Quasi-classical model of the static electrical conductivity of heavily doped degenerate semiconductors at low temperatures
N. A. Poklonskii, S. A. Vyrko, A. N. Dzeraviaha
|
544 |
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Electrophysical properties of $p$-type undoped and arsenic-doped Hg$_{1-x}$Cd$_{x}$Te epitaxial layers with $x\approx$ 0.4 grown by the MOCVD method
V. S. Evstigneev, V. S. Varavin, A. V. Chilyasov, V. G. Remesnik, A. N. Moiseev, B. S. Stepanov
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554 |
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On the structure of the Mössbauer spectra of $^{119m}$Sn impurity atoms in lead chalcogenides under conditions of the radioactive equilibrium of $^{119m}$Te/$^{119}$Sn isotopes
E. I. Terukov, A. V. Marchenko, P. P. Seregin, N. N. Zhukov
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560 |
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Spectroscopy, interaction with radiation
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Rb$_{1-x}$Cs$_{x}$NO$_{3}$ ($x$ = 0.025, 0.05, 0.1) single crystals and their high-temperature X-ray study
A. F. Khazieva, V. I. Nasirov, Yu. G. Asadov, Yu. I. Aliyev, A. O. Dashdemirov, S. H. Jabarov
|
565 |
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Forbidden resonant Raman scattering in GaAs/AlAs superlattices: experiment and calculations
V. A. Volodin, V. A. Sachkov, M. P. Sinyukov
|
569 |
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Surface, interfaces, thin films
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Optical properties of multilayered sol–gel zinc-oxide films
N. M. Denisov, E. B. Chubenko, V. P. Bondarenko, V. E. Borisenko
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575 |
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Semiconductor structures, low-dimensional systems, quantum phenomena
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Study of the structural and luminescence properties of InAs/GaAs heterostructures with Bi-doped potential barriers
A. S. Pashchenko, L. S. Lunin, S. N. Chebotarev, M. L. Lunina
|
581 |
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X-ray diffraction analysis of features of the crystal structure of GaN/Al$_{0.32}$Ga$_{0.68}$N HEMT-heterostructures by the Williamson–Hall method
S. S. Pushkarev, M. M. Grekhov, N. V. Zenchenko
|
586 |
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Quantum oscillations of photoconductivity relaxation in $p$–$i$–$n$ GaAs/InAs/AlAs heterodiodes
Yu. N. Khanin, E. E. Vdovin
|
591 |
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Heterostructures of single-wavelength and dual-wavelength quantum-cascade lasers
A. V. Babichev, A. S. Kurochkin, E. S. Kolodeznyi, A. V. Filimonov, A. A. Usikova, V. N. Nevedomskiy, A. G. Gladyshev, D. V. Denisov, L. Ya. Karachinsky, I. I. Novikov, A. Yu. Egorov
|
597 |
|
|
Study of the properties of II–VI and III–V semiconductor quantum dots
A. I. Mikhailov, V. F. Kabanov, I. A. Gorbachev, E. G. Glukhovskoy
|
603 |
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Micro- and nanocrystalline, porous, composite semiconductors
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Properties of lead-sulfide nanoparticles in a multicrystalline structure
N. D. Zhukov, A. G. Rokakh, M. I. Shishkin
|
608 |
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Carbon systems
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|
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Effect of the dehydrogenation of graphane on its mechanical and electronic properties
L. A. Openov, A. I. Podlivaev
|
614 |
|
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On the possibility of the propagation of solitary electromagnetic waves in bigraphene
E. I. Kukhar, S. V. Kryuchkov, E. S. Ionkina
|
620 |
|
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Semiconductor physics
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High-sensitivity photodetector based on atomically thin MoS$_{2}$
S. D. Lavrov, A. P. Shestakova, E. D. Mishina, Yu. R. Efimenkov, A. S. Sigov
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625 |
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Tunneling current in oppositely connected Schottky diodes formed by contacts between degenerate $n$-GaN and a metal
I. O. Mayboroda, Yu. V. Grishchenko, I. S. Ezubchenko, I. S. Sokolov, I. A. Chernykh, A. A. Andreev, M. L. Zanaveskin
|
630 |
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Model for charge accumulation in $n$- and $p$-MOS transistors during tunneling electron injection from a gate
O. V. Aleksandrov, S. A. Mokrushina
|
637 |
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Manufacturing, processing, testing of materials and structures
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Effect of the sapphire-nitridation level and nucleation-layer enrichment with aluminum on the structural properties of AlN layers
T. V. Malin, D. S. Milakhin, V. G. Mansurov, Yu. G. Galitsyn, A. S. Kozhukhov, V. V. Ratnikov, A. N. Smirnov, V. Yu. Davydov, K. S. Zhuravlev
|
643 |
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Effect of pulsed gamma-neutron irradiation on the photosensitivity of Si-based photodiodes with GeSi nanoislands and Ge epitaxial layers
M. M. Ivanova, A. N. Kachemtsev, A. N. Mikhaylov, D. O. Filatov, A. P. Gorshkov, N. S. Volkova, V. Yu. Chalkov, V. G. Shengurov
|
651 |
|
|
Effect of chemical treatment of a silicon surface on the quality and structure of silicon-carbide epitaxial films synthesized by atom substitution
I. P. Kalinkin, S. A. Kukushkin, A. V. Osipov
|
656 |
|
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Laser-induced modification of the surface of Ge$_{2}$Sb$_{2}$Te$_{5}$ thin films: phase changes and periodic-structure formation
S. A. Yakovlev, A. V. Ankudinov, Yu. V. Vorobyov, M. M. Voronov, S. A. Kozyukhin, B. T. Melekh, A. B. Pevtsov
|
664 |
|
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Variation in the conductivity of polyaniline nanotubes during their formation
V. M. Kapralova, I. Yu. Sapurina, N. T. Sudar
|
671 |
