Fizika i Tekhnika Poluprovodnikov, 2018, Volume 52, Issue 7

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2018, Volume 52, Issue 7

Non-electronic properties of semiconductors (atomic structure, diffusion)
	Matrix calculation of the spectral characteristics of AII–BVI semiconductors doped with iron-group ions I. S. Kurchatov, E. F. Kustov	679

Electronic properties of semiconductors
	Kinetics of the variation in the magnetic impurity ion concentration in Pb$_{1-x-y}$Sn$_{x}$V$_{y}$Te alloys upon doping E. P. Skipetrov, N. S. Konstantinov, L. A. Skipetrova, A. V. Knotko, V. E. Slynko	686
	Radiative recombination, carrier capture at traps, and photocurrent relaxation in PbSnTe : In with a composition close to band inversion D. V. Ishchenko, I. G. Neizvestnyi	694
	Photothreshold of an $\alpha$-GeS layered crystal: first-principles calculation Z. A. Jahangirli, F. M. Gashumzade, D. A. Guseinova, B. G. Mehdiyev, N. B. Mustafaev	699

Spectroscopy, interaction with radiation
	Effect of boron impurity on the light-emitting properties of dislocation structures formed in silicon by Si$^{+}$ ion implantation A. N. Tereshchenko, D. S. Korolev, A. N. Mikhaylov, A. I. Belov, A. A. Nikolskaya, D. A. Pavlov, D. I. Tetelbaum, E. A. Steinman	702
	Photoreflectance spectroscopy study of LT-GaAs layers grown on Si and GaAs substrates L. P. Avakyants, P. Yu. Bokov, I. P. Kazakov, M. A. Bazalevsky, P. M. Deev, A. V. Chervyakov	708

Semiconductor structures, low-dimensional systems, quantum phenomena
	Transverse Nernst–Ettingshausen effect in superlattices upon electron-phonon scattering S. R. Figarova, G. I. Guseinov, V. R. Figarov	712
	Electrical properties of $p$-NiO/$n$-Si heterostructures based on nanostructured silicon H. P. Parkhomenko, M. N. Solovan, P. D. Mar'yanchuk	718
	Ultrafast dynamics of photoexcited charge carriers in In$_{0.53}$Ga$_{0.47}$As/In$_{0.52}$Al$_{0.48}$As superlattices under femtosecond laser excitation D. S. Ponomarev, R. A. Khabibullin, A. N. Klochkov, A. E. Yachmenev, A. S. Bugaev, D. I. Khusyainov, A. M. Buryakov, V. R. Bilyk, E. D. Mishina	723
	In$_{0.8}$Ga$_{0.2}$As quantum dots for GaAs solar cells: metal-organic vapor-phase epitaxy growth peculiarities and properties R. A. Salii, I. S. Kosarev, S. A. Mintairov, A. M. Nadtochiy, M. Z. Shvarts, N. A. Kalyuzhnyy	729
	Experimental study of spontaneous emission in Bragg multiple- quantum-well structures with InAs single-layer quantum wells G. Pozina, M. A. Kaliteevskii, E. V. Nikitina, A. R. Gubaidullin, K. A. Ivanov, A. Yu. Egorov	736

Micro- and nanocrystalline, porous, composite semiconductors
	Photoelectric properties of ZnO threadlike crystals P. S. Shkumbatjuk	741
	Dielectric properties of nanocrystalline tungsten oxide in the temperature range of 223–293 K S. A. Kozyukhin, S. A. Bedin, P. G. Rudakovskaya, O. S. Ivanova, V. K. Ivanov	745
	Study of current flow mechanisms in a CdS/$por$-Si/$p$-Si heterostructure V. V. Tregulov, V. G. Litvinov, A. V. Ermachikhin	751
	Photoluminescence properties of ZnO nanorods synthesized by different methods S. S. Kurbanov, Sh. Z. Urolov, Z. Sh. Shaymardanov, H. D. Cho, T. W. Kang	757
	Modification of photoconductivity spectra in ZnO–CdSe quantum- dot composites upon exposure to additional photoexcitation K. A. Drozdov, I. V. Krylov, A. S. Chizhov, M. N. Rumyantseva, L. I. Ryabova, D. R. Khokhlov	763

Carbon systems
	Analysis of the structure and conductivity of kinked carbon chains obtained by pulsed plasma deposition on various metal substrates I. P. Ivanenko, S. V. Krasnoshchekov, A. V. Pavlikov	768
	Structure and properties of thin graphite-like films produced by magnetron-assisted sputtering A. Ya. Vinogradov, S. A. Grudinkin, N. A. Besedina, S. V. Koniakhin, M. K. Rabchinskii, E. D. Èidel'man, V. G. Golubev	775
	Effect of electron–phonon interaction on the conductivity and work function of epitaxial graphene S. Yu. Davydov	782

Semiconductor physics
	Study of deep levels in a HIT solar cell S. P. Vikhrov, N. V. Vishnyakov, V. V. Gudzev, A. V. Ermachikhin, D. V. Zhilina, V. G. Litvinov, A. D. Maslov, V. G. Mishustin, E. I. Terukov, A. S. Titov	787
	Investigation of the characteristics of heterojunction solar cells based on thin single-crystal silicon wafers E. I. Terukov, A. S. Abramov, D. A. Andronikov, K. V. Emtsev, I. E. Panaiotti, A. S. Titov, G. G. Shelopin	792
	Effect of deep centers on charge-carrier confinement in InGaN/GaN quantum wells and on led efficiency N. I. Bochkareva, Yu. G. Shreter	796
	Diversity of properties of device structures based on group-III nitrides, related to modification of the fractal-percolation system V. V. Emtsev, E. V. Gushchina, V. N. Petrov, N. A. Talnishnikh, A. E. Chernyakov, E. I. Shabunina, N. M. Shmidt, A. S. Usikov, A. P. Kartashova, A. A. Zybin, V. V. Kozlovsky, M. F. Kudoyarov, A. V. Sakharov, G. A. Oganesyan, D. S. Poloskin, V. V. Lundin	804

Manufacturing, processing, testing of materials and structures
	On the fabrication and study of lattice-matched heterostructures for quantum cascade lasers V. V. Mamutin, A. P. Vasil'ev, A. V. Lyutetskiy, N. D. Il'inskaya, Yu. M. Zadiranov, A. N. Sofronov, D. A. Firsov, L. E. Vorob'ev, N. A. Maleev, V. M. Ustinov	812
	Concentric hexagonal GaN structures for nanophotonics, fabricated by selective vapor-phase epitaxy with ion-beam etching M. I. Mitrofanov, Ya. V. Levitskii, G. V. Voznyuk, E. E. Tatarinov, S. N. Rodin, M. A. Kaliteevskii, V. P. Evtikhiev	816