|
Non-electronic properties of semiconductors (atomic structure, diffusion)
|
|
Solid-phase reactions and phase transformations in a nanoscale bismuth/selenium film structure
V. Ya. Kogai, G. M. Mikheev
|
823 |
|
|
Formation of precipitates in Si implanted with $^{64}$Zn$^{+}$ and $^{16}$O$^{+}$ ions
V. V. Privezentsev, E. P. Kirilenko, A. V. Goryachev, A. V. Lutzau
|
827 |
|
|
Features of $^{63,65}$Cu NMR spectra in the local field of samples of CuFeS$_{2}$ semiconductor mineral from oceanic sulfide deposits
V. L. Matukhin, A. I. Pogoreltsev, A. N. Gavrilenko, S. O. Garkavyi, E. V. Shmidt, S. F. Babaeva, A. A. Sukhanova, E. I. Terukov
|
836 |
|
|
Electronic properties of semiconductors
|
|
|
Electronic processes in CdIn$_{2}$Te$_{4}$ crystals
O. G. Grushka, S. M. Chupyra, S. V. Bilichuk, O. A. Parfenyuk
|
840 |
|
|
Optical absorption of copper-activated zinc-sulfide polycrystalline layers
V. T. Avanesyan, A. V. Rakina, N. S. Kablukova
|
844 |
|
|
Microwave magnetoabsorption oscillations in Fe-doped HgSe crystals
A. I. Veinger, I. V. Kochman, V. I. Okulov, M. D. Andriichuk, L. D. Paranchich
|
847 |
|
|
Surface, interfaces, thin films
|
|
|
On recombination processes in CdS–PbS films
A. G. Rokakh, M. I. Shishkin, V. S. Atkin
|
853 |
|
|
Effect of the Ag nanoparticle concentration in TiO$_{2}$–Ag functional coatings on the characteristics of GaInP/GaAs/Ge photoconverters
L. S. Lunin, M. L. Lunina, A. A. Kravtsov, I. A. Sysoev, A. V. Blinov, A. S. Pashchenko
|
860 |
|
|
Semiconductor structures, low-dimensional systems, quantum phenomena
|
|
|
Nonlinear optical properties of CdS/ZnS quantum dots in a high-molecular-weight polyvinylpyrrolidone matrix
A. S. Kulagina, S. K. Evstropiev, N. N. Rosanov, V. V. Vlasov
|
865 |
|
|
Specific features of the electrochemical capacitance–voltage profiling of GaAs LED and pHEMT structures with quantum-confined regions
G. E. Yakovlev, M. V. Dorokhin, V. I. Zubkov, A. L. Dudin, A. V. Zdoroveyshchev, E. I. Malysheva, Yu. A. Danilov, B. N. Zvonkov, A. V. Kudrin
|
873 |
|
|
Effect of misorientation and preliminary etching of the substrate on the structural and optical properties of integrated GaAs/Si(100) heterostructures produced by vapor phase epitaxy
P. V. Seredin, D. L. Goloshchapov, D. S. Zolotukhin, A. S. Len'shin, A. N. Lukin, Yu. Yu. Khudyakov, I. N. Arsent'ev, A. V. Zhabotinsky, D. N. Nikolaev, N. A. Pikhtin
|
881 |
|
|
Photoluminescence of ZnS : Cu in a polymethyl methacrylate matrix
V. P. Smagin, N. S. Eremina, M. S. Leonov
|
891 |
|
|
Influence of isotropic pressure on the current–voltage characteristics of surface-barrier diodes Sb–$p$-Si$\langle$Mn$\rangle$–Au
S. Zaynabidinov, I. G. Tursunov, O. Khimmatkulov
|
896 |
|
|
Simulating tunneling electron transport in the semiconductor–crystalline insulator–Si(111) system
M. I. Vexler
|
900 |
|
|
Photoconductivity amplification in a type-II $n$-GaSb/InAs/$p$-GaSb heterostructure with a single QW
M. P. Mikhailova, I. A. Andreev, G. G. Konovalov, L. V. Danilov, E. V. Ivanov, E. V. Kunitsyna, N. D. Il'inskaya, R. V. Levin, B. V. Pushnii, Yu. P. Yakovlev
|
906 |
|
|
Amorphous, glassy, organic semiconductors
|
|
|
Dielectric relaxation in thin layers of the Ge$_{28.5}$Ðb$_{15}$S$_{56.5}$ glassy system
R. A. Castro, N. I. Anisimova, A. A. Kononov
|
912 |
|
|
Micro- and nanocrystalline, porous, composite semiconductors
|
|
|
Magnetic properties of vacancies and doped chromium in a ZnO crystal
V. N. Jafarova, G. S. Orudzhev, S. S. Guseinova, V. R. Stempitsky, M. S. Baranava
|
916 |
|
|
Dynamics of changes in the photoluminescence of porous silicon after gamma irradiation
M. A. Elistratova, D. S. Poloskin, D. N. Goryachev, I. B. Zakharova, O. M. Sreseli
|
921 |
|
|
On the application of silicate glasses with CdS$_{x}$Se$_{1-x}$ semiconductor nanocrystals as optical thermometers and optical filters with a controlled absorption edge
P. G. Petrosian, L. N. Grigoryan, G. A. Musaelyan
|
926 |
|
|
Degradation of the photoluminescence of ZnTPP and ZnTPP-C$_{60}$ thin films under gamma irradiation
N. M. Romanov, M. A. Elistratova, E. Lahderanta, I. B. Zakharova
|
931 |
|
|
Semiconductor physics
|
|
|
Modulation of the charge of germanium MIS structures with fluorine-containing insulators
M. B. Shalimova
|
939 |
|
|
Effect of deep centers on the statistical delay of microplasma breakdown in gallium-arsenide light-emitting diodes
V. K. Ionychev, A. A. Shesterkina
|
944 |
|
|
On the fabrication of graphene $p$–$n$ junctions and their application for detecting terahertz radiation
G. Yu. Vasil'eva, Yu. B. Vasil'ev, S. N. Novikov, S. N. Danilov, S. D. Ganichev
|
949 |
|
|
Room temperature lasing of multi-stage quantum-cascade lasers at 8 $\mu$m wavelength
A. V. Babichev, A. G. Gladyshev, A. S. Kurochkin, E. S. Kolodeznyi, G. S. Sokolovskii, V. E. Bugrov, L. Ya. Karachinsky, I. I. Novikov, A. Bousseksou, A. Yu. Egorov
|
954 |
|
|
Manufacturing, processing, testing of materials and structures
|
|
|
Crystal structure and band gap of (MnIn$_{2}$S$_{4}$)$_{1-x}$ $\cdot$ (AgIn$_{5}$S$_{8}$)$_{x}$ alloys
I. V. Bondar', Ch. B. Tkhan
|
958 |
