|
LASER-EMISSION EFFECT ON THE LIQUID SOLUTION FLOW THROUGH THE POROUS
MEMBRANE
Yu. N. Petrov, V. I. Pustovoi, A. A. Surkov
|
1473 |
|
|
STATISTICAL-ANALYSIS OF THE EXPERIMENTAL-INDUSTRIAL PRODUCTION OF
NEUTRON-ALLOYED SILICON ON THE RBMK-1000-TYPE REACTOR
I. N. Voronov, P. M. Grinshtein, R. I. Guchetl, A. V. Litovchenko, M. A. Morokhovets, V. M. Tuchkevich, I. S. Shlimak
|
1477 |
|
|
NON-DISSIPATIVE MECHANISM OF FAST MAGNETOELASTIC WAVE FILTRATION IN
FERRITE STRUCTURES
G. T. Kazakov, Yu. A. Filimonov
|
1482 |
|
|
GROWTH OF NEW FORMATIONS IN THE COPPER SUPERION SELENIDE
M. A. Korzhuev, N. Kh. Abrikosov, V. F. Bankina
|
1486 |
|
|
ELECTRON-STRUCTURE AND D-F-EXCHANGE RESONANCE IN GD-GAMMA ALLOYS
A. B. Beznosov, V. P. Gnezdilov, V. V. Eremenko
|
1490 |
|
|
INDUCED EMISSION OF PLASMA-WAVES MOVING BY 2-LEVEL ATOMS
B. E. Nemtsov, V. Y. Eidman
|
1494 |
|
|
FERRITE-GARNET FILMS WITH THE SUB-MICRON CMD ON SAMARIUM-GALLIUM GARNET
SUPPORT
M. A. Ivanov, V. V. Osiko, Y. M. Papin, V. V. Randoshkin, Y. D. Rogozhin, M. I. Timoshechkin
|
1497 |
|
|
INFLUENCE OF FINELY DISPERSED SUBSTANCES ON THE HIGH-VOLTAGE DIODE
IMPEDANCE
A. V. Gordeev, V. V. Zazhivikhin, L. I. Rudakov
|
1500 |
|
|
F-CENTER IN IRRADIATED AND ADDITIVELY-DYED BEO CRYSTALS
A. V. Kruzhalov, S. V. Gorbunov, B. V. Shul'gin, V. A. Maslov
|
1503 |
|
|
ION CURRENTS EXCITED BY THE EXPLOSIVE ELECTRON-EMISSION PROCESS
L. A. Shirochin, M. A. Polyakov, G. N. Fursei, S. M. Lupekhin
|
1507 |
|
|
FORMATION OF DISLOCATIONS DURING THE LASER IRRADIATION AND THE FOLLOWING
SILICON ANNEAL
V. P. Alekhin, Y. M. Litvinov, N. F. Moiseenko, A. N. Molostvov
|
1510 |
|
|
NEW METHOD OF THE TEMPERATURE ESTIMATION OF LIQUID-CRYSTAL PHAE
TRANSFERS
S. V. Yablonskii, L. M. Blinov
|
1513 |
|
|
OBSERVATION OF THE CO2-LASER EMISSION SCATTERING ON SMALL-SCALE
PLASMA-OSCILLATIONS ON THE FT-2 TOKAMAK
L. G. Askinazi, V. N. Budnikov, V. V. Bulanin, L. A. Esipov, D. O. Korneev, I. E. Sakharov, A. Y. Stepanov, S. N. Ushakov
|
1517 |
|
|
SURFACE ELECTROMAGNETIC-WAVE INTERFERENCE AND PERIODICAL STRUCTURES
FORMED UNDER THE INFLUENCE OF THE INTENSIVE LIGHT ON THE SEMICONDUCTOR
SURFACE
V. V. Bazhenov, A. M. Bonch-Bruevich, M. N. Libenson, V. S. Makin
|
1520 |
|
|
PROPERTIES OF P-LAYERS OF THE ION-ALLOYED SILICON-CARBIDE, FORMED BY THE
LASER-EMISSION
E. E. Violin, E. A. Gorin, E. N. Potapov, Yu. M. Tairov
|
1527 |
|
|
ANISOTROPY OF THE NUCLEAR OPTICAL POLARIZATION AND
ELECTRON-PARAMAGNETIC-RES IN THE IRRADIATED SILICON
L. S. Vlasenko, M. P. Vlasenko, V. A. Khramtsov
|
1529 |
