|
Transmutation doping of semiconductors under te action of charged particles (Review)
V. V. Kozlovskii, L. F. Zakharenkov, B. A. Shustrov
|
3 |
|
|
Frenkel pairs in Germanium and Silicon
V. V. Emtsev, T. V. Mashovets, V. V. Mikhnovich
|
22 |
|
|
Excitons in potential wells with 2D electron gas
F. G. Pikus
|
45 |
|
|
Temperature dependence od 2D electron-gas mobility limited by impurity scattering in heterostructures with broad spacer layer
F. G. Pikus, G. V. Golant
|
59 |
|
|
Photoconduction and state density of boron-doped amorphous hydrogenated silicon
O. A. Golikova, U. S. Babakhodzhaev, V. V. Dubro, R. G. Ikramov, M. M. Kazanin, M. M. Mezdrogina, R. R. Yafaev
|
66 |
|
|
Study of hole electrotransfer in amorphous hydrogenated silicon by the method of photo-current-voltage characteristic
O. A. Golikova, R. G. Ikramov, M. M. Kazanin
|
71 |
|
|
Absorption on bound and free excitons in ZnP$_{2}{-}D^{8}_{4}$
N. N. Syrbu, V. I. Morozova, G. I. Stratan
|
74 |
|
|
Current–voltage characteristic of MOS transistor with consideration for the dependence of mobility on a longitudinal electic field
G. I. Zebrev
|
83 |
|
|
Structure of manganese impurity center in gallium antimonide
E. I. Gheorghitsa, L. M. Gutsulyak, V. I. Ivanov-Omskii, V. F. Masterov, V. A. Smirnov, K. F. Shtel'makh
|
89 |
|
|
Coduction lasting relaxations due to photoinduced oxygen diffusion along intergrain boundaries in Cadmiom-Sulpphide films
V. P. Panov, G. D. Panova, M. K. Sheĭnkman
|
95 |
|
|
Production and study of SiO$_{2}$ films activated by semiconductor CdS nanocrystals
S. A. Gurevich, A. I. Ekimov, I. A. Kudryavtsev, A. V. Osinsky, B. I. Skopina, D. I. Chepik
|
102 |
|
|
Effective green light-emitting diodes on silicon carbide
Yu. A. Vodakov, A. A. Vol'fson, G. V. Zaritsky, E. N. Mokhov, A. G. Ostroumov, A. D. Roenkov, V. V. Semenov, V. I. Sokolov, V. A. Syralev, V. E. Udal'tsov
|
107 |
|
|
kinetics of silicon oxidation and structure of oxide layers of thickness less than 50 Angströms
A. Ya. Vul', T. L. Makarova, V. Yu. Osipov, Yu. S. Zinchik, S. K. Boitsov
|
111 |
|
|
Transport phenomenon in potential well with impurities of variable valency
I. I. Lyapilin, I. G. Kuleyev, V. V. Karyagin
|
122 |
|
|
Splitting of dimension-quantization subbands in nonsymmetric heterostructures
L. G. Gerchikov, A. V. Subashiev
|
131 |
|
|
Characteristic properties of “internal” electrostatic-wave propaganation in inhomogeneous phasma-like medium
F. G. Bass, A. A. Bulgakov, S. I. Khankina
|
140 |
|
|
Current–voltage and capacity–voltage characteristics of silicon semiconductor–dielectric–semiconductor structures with dielectric of thickness less than 50 Angströms
A. Ya. Vul', A. T. Dideikin, V. Yu. Osipov, S. K. Boitsov, Yu. S. Zinchik, T. L. Makarova
|
146 |
|
|
Effect on ion-implantation conditions on defect formation in silicon
P. Zhukowski
|
150 |
|
|
Role of bulk deep centers in formation of surface photoEMF in ZnSe low-resistance single crystals
I. A. Davydov, L. P. Strakhov, S. L. Tselishchev
|
159 |
|
|
Short Notes
|
|
|
On the relation between flow thresholds in flow theory
A. G. Kyazimzade
|
169 |
|
|
Temperature dependence of photoconduction relaxation time for $n$-Cd$_{x}$Hg$_{1-x}$Te in a microwave field
V. V. Zuev, A. I. Klyshevich, A. A. Styaponavichyus, M. P. Yakovlev
|
171 |
|
|
Effect of compensating annealing on $1/f$ noise in Cd$_{x}$Hg$_{1-x}$Te
I. S. Bakshi, L. A. Karachevtseva, A. V. Lyubchenko, V. A. Petryakov, E. A. Sal'kov, B. I. Khizhnyak
|
173 |
|
|
Recombination of charge carriers in thermally treated Si with different types of growth microdefects
I. I. Kolkovskii, V. F. Latyshenko, P. F. Lugakov, V. V. Shusha
|
176 |
|
|
Nonreorientable divacancy in silicon
I. V. Zhalko-Titarenko, A. M. Kraitchinskii, I. S. Rogutskii
|
180 |
|
|
Radioelectric effect in superlattices under pulsed irradiation
M. V. Vyazovsky, S. V. Kryuchkov
|
184 |
|
|
On the noise in semiconductor structures with injection instability
B. G. Idlis, V. D. Frolov
|
187 |
|
|
Critique and Bibliography
|
|
|
New books on semiconductors
V. I. Kozub
|
192 |
