Fizika i Tekhnika Poluprovodnikov, 2010, Volume 44, Issue 1

JOURNALS // Fizika i Tekhnika Poluprovodnikov // Archive

2010, Volume 44, Issue 1

Reviews
	Defect engineering in the implantation-based technology of silicon light-emitting structures with dislocation-related luminescance N. A. Sobolev	3

Non-electronic properties of semiconductors (atomic structure, diffusion)
	Determination of the composition of binary chalcogenide glasses by X-ray fluorescence analysis G. A. Bordovskii, A. V. Marchenko, P. P. Seregin, N. Smirnova, E. I. Terukov	26

Electronic and optical properties of semiconductors
	Spreading resistance and compensation of charge carriers in ferromagnetic silicon implanted with manganese A. F. Orlov, L. A. Balagurov, I. V. Kulemanov, Yu. N. Parkhomenko, A. A. Kartavih, V. V. Saraikin, Yu. A. Agafonov, V. I. Zinenko	30
	Effect of growth temperature on properties of transparent conducting gallium-doped ZnO films A. Kh. Abduev, A. K. Akhmedov, A. Sh. Asvarov, A. A. Abdullaev, S. N. Sulyanov	34
	Growth of the (In$_2$S$_3$)$_x$(FeIn$_2$S$_4$)$_{1-x}$ single crystals and properties of photoelectric structures on their basis I. V. Bondar', V. Yu. Rud', Yu. V. Rud', E. I. Terukov	39
	Inherent potential inhomogeneity on the semiconductor surface for equilibrium impurity distribution V. B. Bondarenko, S. N. Davydov, A. V. Filimonov	44
	Discovery of the (In$_2$S$_3$)$_x$(MnIn$_2$S$_4$)$_{1-x}$ solid solutions and fabrication of photosensitive structures based on them V. Yu. Rud', Yu. V. Rud', M. A. Osipova, I. V. Bondar'	48

Semiconductor structures, interfaces and surfaces
	Dynamics of photoluminescence and recombination processes in Sb-containing laser nanostructures D. A. Firsov, L. Shterengas, G. Kipshidze, V. L. Zerova, T. Hosoda, P. Thumrongsilapa, L. E. Vorob'ev, G. Belenky	53
	Monitoring the composition of the Cd$_{1-z}$Zn$_z$Te heteroepitaxial layers by spectroscopic ellipsometry M. V. Yakushev, V. A. Shvets, I. A. Azarov, S. V. Rykhlitskii, Yu. G. Sidorov, E. V. Spesivtsev, T. S. Shamirzaev	62

Low-dimensional systems
	Electroluminescence in $p$-InAs/AlSb/InAsSb/AlSb/$p(n)$-GaSb type II heterostructures with deep quantum wells at the interface M. P. Mikhailova, È. V. Ivanov, K. D. Moiseev, Yu. P. Yakovlev, E. Hulicius, A. Hospodkova, J. Pangrac, T. Šimeček	69
	Formation of three-dimensional ZnSe-based semiconductor nanostructures S. V. Alyshev, A. O. Zabezhailov, R. A. Mironov, V. I. Kozlovsky, E. M. Dianov	75

Amorphous, glassy, porous, organic, microcrystalline semiconductors, semiconductor composites
	Charge carrier transport in Ge$_{20}$As$_{20}$S$_{60}$ chalcogenide semiconductor films L. P. Kazakova, K. D. Tsendin, È. A. Lebedev, D. Arsova, I. A. Obukhova	79
	The nature of emission of porous silicon produced by chemical etching N. E. Korsunskaya, T. R. Stara, L. Yu. Khomenkova, E. V. Svezhentsova, N. N. Melnichenko, F. F. Sizov	82
	Estimation of the adequacy of the fractal model of the atomic structure of amorphous silicon A. B. Golodenko	87
	Detection of singlet oxygen in photoexcited porous silicon nanocrystals by photoluminescence measurements M. B. Gongalsky, E. A. Konstantinova, L. A. Osminkina, V. Yu. Timoshenko	92

Semiconductor physics
	Active region based on graded-gap InGaN/GaN superlattices for high-power 440- to 470-nm light-emitting diodes A. F. Tsatsul'nikov, V. V. Lundin, A. V. Sakharov, E. E. Zavarin, S. O. Usov, A. E. Nikolaev, N. A. Cherkashin, B. Ya. Ber, D. Yu. Kazantsev, M. N. Mizerov, Hee Seok Park, M. Hytch, F. Hue	96
	Paradoxes of photoconductive target and optical control of secondary ion yield A. G. Rokakh, M. D. Matasov	101
	Efficient infrared-terahertz pulse conversion in waveguide semiconductor structures V. A. Kukushkin	109

Manufacturing, processing, testing of materials and structures
	The initial stage of growth of crystalline nanowhiskers N. V. Sibirev, M. V. Nazarenko, G. È. Cirlin, Yu. B. Samsonenko, V. G. Dubrovskii	114
	The role of stress distribution at the film/barrier interface in formation of copper silicides A. V. Panin, A. R. Shugurov, I. V. Ivonin, E. V. Shesterikov	118
	Effect of pressure in the growth reactor on the properties of the active region in the InGaN/GaN light-emitting diodes V. V. Lundin, E. E. Zavarin, M. A. Sinicin, A. V. Sakharov, S. O. Usov, A. E. Nikolaev, D. V. Davydov, N. A. Cherkashin, A. F. Tsatsul'nikov	126
	Monte Carlo simulation of growth of nanowhiskers A. G. Nastovjak, I. G. Neizvestnyi, N. L. Shwartz, Z. Sh. Yanovitskaya	130

Personalia
	To the memory of Mikhail Grigor'evich Mil'vidskii (1932–2009)	136