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Electronic properties of semiconductors
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Electrical properties of Pb$_{1-x}$Mn$_x$Te single crystals with an excess of tellurium
G. Z. Bagiyeva, G. D. Abdinova, N. B. Mustafaev, J. Sh. Abdinov
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289 |
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Photoconductivity of vanadium-doped lead telluride in the terahertz spectral region
A. I. Artamkin, A. A. Dobrovolsky, A. A. Vinokurov, V. P. Zlomanov, S. N. Danilov, V. V. Bel'kov, L. I. Ryabova, D. R. Khokhlov
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293 |
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Specific features of self-compensation in Er$_x$Sn$_{1-x}$Se solid solutions
J. È. Huseynov, M. I. Murguzov, Sh. S. Ismailov
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298 |
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Violation of neutrality and occurrence of $S$-shaped current-voltage characteristic for doped semiconductors under double injection
T. T. Ìnatsakanov, A. G. Tandoev, M. E. Levinshteĭn, S. N. Yurkov, J. W. Palmour
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302 |
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Surface, interfaces, thin films
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Study of the recombination process at crystallite boundaries in CuIn$_{1-x}$Ga$_x$Se$_2$ (CIGS) films by microwave photoconductivity
K. V. Bocharov, G. F. Novikov, T. Y. Hsieh, M. V. Gapanovich, M. J. Jeng
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310 |
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Thermally deposited Ag-doped CdS transistors with rare-earth oxide Nd$_2$O$_3$ as gate dielectric
P. Gogoi
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316 |
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Optical size effect in In$_2$O$_3$ nanostructured films
V. N. Katerinchuk, Z. R. Kudrynskyi
|
320 |
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Semiconductor structures, low-dimensional systems, quantum phenomena
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Effect of Bi isovalent dopants on the formation of homogeneous coherently strained InAs quantum dots in GaAs matrices
R. M. Peleshchak, S. K. Guba, O. V. Kuzyk, O. O. Dan’kiv, I. V. Kurilo
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324 |
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Dependence of the efficiency of Raman scattering in silicon nanowire arrays on the excitation wavelength
K. V. Bunkov, L. A. Golovan, K. A. Gonchar, V. Yu. Timoshenko, P. K. Kashkarov, M. Kulmas, V. Sivakov
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329 |
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Influence of irradiation with swift heavy ions on multilayer Si/SiO$_2$ heterostructures
G. A. Kachurin, S. G. Cherkova, D. V. Marin, V. A. Volodin, A. G. Cherkov, A. Kh. Antonenko, G. N. Kamaev, V. A. Skuratov
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334 |
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Revealing the surface interface correlations in $a$-Si:H films by 2D detrended fluctuation analysis
A. V. Alpatov, S. P. Vikhrov, N. V. Grishankina
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340 |
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Maximum drift velocity of electrons in selectively doped InAlAs/InGaAs/InAlAs heterostructures with InAs inserts
A. L. Shilenas, Yu. K. Pozhela, K. Požela, V. Juciené, I. S. Vasil'evskii, G. B. Galiev, S. S. Pushkarev, E. A. Klimov
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348 |
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Amorphous, glassy, organic semiconductors
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Study of the composition, structure, and optical properties of $a$-Si$_{1-x}$C$_x$ : H$\langle$Er$\rangle$ films erbium doped from the Er(pd)$_3$ complex compound
V. Kh. Kudoyarova, V. A. Tolmachev, E. V. Gushchina
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353 |
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Micro- and nanocrystalline, porous, composite semiconductors
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Photoconductivity of composite structures based on porous SnO$_2$ sensitized with CdSe nanocrystals
K. A. Drozdov, V. I. Kochnev, A. A. Dobrovolsky, R. B. Vasiliev, A. V. Babynina, M. N. Rumyantseva, A. M. Gaskov, L. I. Ryabova, D. R. Khokhlov
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360 |
|
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Semiconductor physics
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Features of the performance of a transient voltage suppressor in the pulsed mode
A. Z. Rahmatov, O. A. Abdulkhaev, A. V. Karimov, D. M. Yodgorova
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364 |
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Surface functional composition and sensor properties of ZnO, Fe$_2$O$_3$, and ZnFe$_2$O$_4$
S. S. Karpova, V. A. Moshnikov, S. V. Myakin, E. S. Kolovangina
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369 |
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Theory and simulation of combined mechanisms limiting the safe operating area of power semiconductor microelectronic switches
A. V. Gorbatyuk, D. V. Gusin, B. V. Ivanov
|
373 |
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Picosecond internal $Q$-switching mode correlates with laser diode breakdown voltage
B. Lanz, S. N. Vainshtein, V. M. Lantratov, N. A. Kalyuzhnyy, S. A. Mintairov, J. T. Kostamovaara
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383 |
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Comparison of the properties of AlGaInN light-emitting diode chips of vertical and flip-chip design using silicon as the a submount
L. K. Markov, I. P. Smirnova, A. S. Pavluchenko, M. V. Kukushkin, E. D. Vasil'eva, A. E. Chernyakov, A. S. Usikov
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386 |
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Optimization of the deposition and annealing conditions of fluorine-doped indium oxide films for silicon solar cells
G. G. Untila, T. N. Kost, A. B. Chebotareva, M. A. Timofeev
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392 |
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Manufacturing, processing, testing of materials and structures
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Influence of the doping with third group oxides on the properties of zinc oxide thin films
Sowmya Palimar, Kasturi V. Bangera, G. K. Shivakumar
|
399 |
|
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Transition from the two- to three-dimensional growth of Ge films upon deposition onto relaxed SiGe/Si(001) buffer layers
M. V. Shaleev, A. V. Novikov, D. V. Yurasov, J. M. Hartmann, O. A. Kuznetsov, D. N. Lobanov, Z. F. Krasil'nik
|
404 |
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Low-temperature growth of silicon epitaxial layers codoped with erbium and oxygen atoms
D. V. Shengurov, V. Yu. Chalkov, S. A. Denisov, V. G. Shengurov, M. V. Stepikhova, M. N. Drozdov, Z. F. Krasil'nik
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410 |
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Influence of the carrier Gas, trimethylgallium flow, and growth time on the character of the selective epitaxy of GaN
M. M. Rozhavskaya, V. V. Lundin, E. E. Zavarin, S. I. Troshkov, P. N. Brunkov, A. F. Tsatsul'nikov
|
414 |
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Specific features of nanosize object formation in an InSb/InAs system by metal-organic vapor-phase epitaxy
V. V. Romanov, P. A. Dementev, K. D. Moiseev
|
420 |
|
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The mechanism of contact-resistance formation on lapped $n$-Si surfaces
A. V. Sachenko, A. E. Belyaev, N. S. Boltovets, A. O. Vinogradov, L. M. Kapitanchuk, R. V. Konakova, V. P. Kostylyov, Ya. Ya. Kudryk, V. P. Klad'ko, V. N. Sheremet
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426 |
