Fizika i Tekhnika Poluprovodnikov, 2024, Volume 58, Issue 8

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2024, Volume 58, Issue 8

XXVIII International Symposium ''Nanophysics and Nanoelectronics'', Nizhny Novgorod, 11-15 March 2024
	Local doping of monolayer WSe$_2$ on piezoelectric GaInP$_2$ and GaN substrates V. Yu. Aksenov, A. V. Ankudinov, A. S. Vlasov, M. S. Dunaevskii, V. N. Zhmerik, D. V. Lebedev, K. V. Likhachev, V. A. Pereskokova, A. M. Mintairov	401
	Non-annealed ohmic contacts with reduced resistance to $p$- and $n$-type epitaxial layers of diamond and their thermal stability E. A. Arkhipova, M. N. Drozdov, S. A. Kraev, O. I. Khrykin, A. I. Okhapkin, M. A. Lobaev, A. L. Vikharev, V. A. Isaev, S. A. Bogdanov	409

Electronic properties of semiconductors
	Drift transport of charge carriers in silicon $p^+$–$n$–$n^+$ structures at temperatures $\le$ 100 mK E. M. Verbitskaya, I. V. Eremin, A. A. Podoskin, V. O. Zbrozhek, S. O. Slipchenko, N. N. Fadeeva, A. A. Yablokov, V. K. Eremin	415
	Electrical properties of highly nitrogen–doped synthetic single crystal diamonds grown at high pressure and temperature S. G. Buga, I. N. Kupriyanov, Yu. M. Borzdov, M. S. Kuznetsov, N. V. Luparev, S. A. Nosukhin, B. A. Kulnitskiy, D. D. Prikhodko, Yu. N. Pal'yanov	424

Semiconductor structures, low-dimensional systems, quantum phenomena
	Magnetotransport in HgTe quantum wells with two gate electrodes G. M. Minkov, O. E. Rut, A. A. Sherstobitov, A. V. Germanenko, S. A. Dvoretskii, N. N. Mikhailov	434

Amorphous, glassy, organic semiconductors
	Influence of Bi impurity on the main parameters of the current-voltage characteristics of the Ge$_2$Sb$_2$Te$_5$ phase-change memory semiconductor S. A. Fefelov, L. P. Kazakova, N. A. Bogoslovskii, A. B. Bylev, E. V. Gushchina, Zh. K. Tolepov, A. S. Zhakypov, O. Yu. Prikhodko	443

Micro- and nanocrystalline, porous, composite semiconductors
	Fundamental and applied aspects of physical characteristics of polycrystalline samples of oxide semiconductor (In$_2$O$_3$)$_{1-x}$ : (SrO)$_x$ Yu. M. Nikolaenko, N. B. Efros, N. I. Mezin, I. Yu. Reshidova	448

Semiconductor physics
	Identification of the main recombination channels in lightly doped layers of GaAs $p$–$i$–$n$-diodes before and after irradiation with 1 MeV neutrons M. M. Sobolev, F. Yu. Soldatenkov, V. A. Kozlov	453