Pikhtin Nikita Alexandrovich

Publications in Math-Net.Ru

1. Температурная зависимость выходной оптической мощности полупроводниковых лазеров-тиристоров на основе гетероструктур AlGaAs/GaAs/InGaAs
   
   Kvantovaya Elektronika, 54:4 (2024),  218–223
2. Квантовые каскадные лазеры InGaAs/AlInAs/InP с отражающими и просветляющими оптическими покрытиями
   
   Kvantovaya Elektronika, 54:2 (2024),  100–103
3. Metal–dielectric mirror coatings for 4–5-μm quantum-cascade lasers
   
   Kvantovaya Elektronika, 53:8 (2023),  641–644
4. High-power multimode semiconductor lasers (976 nm) based on asymmetric heterostructures with a broadened waveguide and reduced vertical divergence
   
   Kvantovaya Elektronika, 53:5 (2023),  374–378
5. Dielectric highly reflective mirror coatings for quantum cascade lasers with 4 - 5 μm emission wavelength
   
   Kvantovaya Elektronika, 53:5 (2023),  370–373
6. Cavity optimisation of high-power InGaAs/AlGaAs/GaAs semiconductor lasers (λ=1060 nm) for efficient operation at ultrahigh pulsed pump currents
   
   Kvantovaya Elektronika, 53:1 (2023),  17–24
7. High power and repetition rate integral laser source (1060 nm) based on laser diode array and 2D multi-element opto-thyristor array as a high-speed current switch
   
   Kvantovaya Elektronika, 53:1 (2023),  11–16
8. Quasi-cw high-power laser diode mini bars (λ=976 nm) with increased length of a resonator based on asymmetric heterostructures with a broadened waveguide
   
   Kvantovaya Elektronika, 53:1 (2023),  6–10
9. Laser diodes (850nm) based on an asymmetric AlGaAs/GaAs heterostructure with a bulk active region for generating high-power subnanosecond optical pulses
   
   Kvantovaya Elektronika, 53:1 (2023),  1–5
10. High-power laser diodes based on InGaAs(Р)/Al(In)GaAs(P)/GaAs heterostructures with low internal optical losses
    
    Kvantovaya Elektronika, 52:12 (2022),  1152–1165
11. Lateral waveguide mode selection for the development of single-mode ridge lasers with a distributed Bragg mirror
    
    Kvantovaya Elektronika, 52:10 (2022),  889–894
12. Investigation of the quasi-cw heating dynamics of an active region of high-power semiconductor lasers (λ = 1060 nm) with an ultra-wide emitting aperture (800 μm)
    
    Kvantovaya Elektronika, 52:9 (2022),  794–798
13. Analysis of light–current characteristics of high-power semiconductor lasers (1060 nm) in a steady-state 2D model
    
    Kvantovaya Elektronika, 52:4 (2022),  343–350
14. High-power quasi-cw semiconductor lasers (1060 nm) with an ultra-wide emitting aperture
    
    Kvantovaya Elektronika, 52:4 (2022),  340–342
15. High-power mesa-stripe semiconductor lasers (910 nm) with an ultra-wide emitting aperture based on tunnel-coupled InGaAs/AlGaAs/GaAs heterostructures
    
    Kvantovaya Elektronika, 52:2 (2022),  174–178
16. Vertical stacks of pulsed (100 ns) mesa-stripe semiconductor lasers with an ultra-wide (800 μm) aperture emitting kilowatt-level peak power at a wavelength of 1060 nm
    
    Kvantovaya Elektronika, 52:2 (2022),  171–173
17. Operating characteristics of semiconductor quantum well lasers as functions of the waveguide region thickness
    
    Fizika i Tekhnika Poluprovodnikov, 55:12 (2021),  1229–1235
18. Quantum-cascade laser with radiation output through a textured layer
    
    Fizika i Tekhnika Poluprovodnikov, 55:11 (2021),  1081–1085
19. Surface emitting quantum-cascade ring laser
    
    Fizika i Tekhnika Poluprovodnikov, 55:7 (2021),  602–606
20. Turn on process spatial dynamics of a thyristor laser (905nm) based on an AlGaAs/InGaAs/GaAs heterostructure
    
    Fizika i Tekhnika Poluprovodnikov, 55:5 (2021),  466–472
21. Analysis of the threshold conditions and lasing efficiency of internally circulating modes in large rectangular cavities based on AlGaAs/GaAs/InGaAs laser heterostructures
    
    Fizika i Tekhnika Poluprovodnikov, 55:5 (2021),  460–465
22. Isotype $n$-AlGaAs/$n$-GaAs heterostructures optimized for efficient interband radiative recombination under current pumping
    
    Fizika i Tekhnika Poluprovodnikov, 55:5 (2021),  427–433
23. High-power CW InGaAs/AlGaAs (1070 nm) lasers with a broadened lateral waveguide of a mesa-stripe structure
    
    Fizika i Tekhnika Poluprovodnikov, 55:4 (2021),  344–348
24. Structural and spectroscopic studies of epitaxial GaAs layers grown on compliant substrates based on a superstructure layer and protoporous silicon
    
    Fizika i Tekhnika Poluprovodnikov, 55:1 (2021),  86–95
25. Spectroscopic studies of integrated GaAs/Si heterostructures
    
    Fizika i Tekhnika Poluprovodnikov, 55:1 (2021),  34–40
26. Heterostructures of quantum-cascade lasers with nonselective overgrowth by metalorganic vapour phase epitaxy
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:24 (2021),  46–50
27. Output optical power dynamics of semiconductor lasers (1070 nm) with a few-mode lateral waveguide of mesa-stripe design at ultrahigh drive currents
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:7 (2021),  42–45
28. Optical absorption in a waveguide based on an n-type AlGaAs heterostructure
    
    Kvantovaya Elektronika, 51:11 (2021),  987–991
29. High-power pulsed hybrid semiconductor lasers emitting in the wavelength range 900–920 nm
    
    Kvantovaya Elektronika, 51:10 (2021),  912–914
30. High-power AlGaInAs/InP semiconductor lasers with an ultra-narrow waveguide emitting in the spectral range 1.9–2.0 μm
    
    Kvantovaya Elektronika, 51:10 (2021),  909–911
31. InGaAs/AlGaAs/GaAs semiconductor lasers ($\lambda$ = 900–920 nm) with broadened asymmetric waveguides and improved current–voltage characteristics
    
    Kvantovaya Elektronika, 51:10 (2021),  905–908
32. Comparison of AlGaInAs/InP semiconductor lasers (λ = 1450–1500 nm) with ultra-narrow and strongly asymmetric waveguides
    
    Kvantovaya Elektronika, 51:4 (2021),  283–286
33. Semiconductor AlGaInAs/InP lasers (λ = 1450 – 1500 nm) with a strongly asymmetric waveguide
    
    Kvantovaya Elektronika, 51:2 (2021),  133–136
34. Light–current characteristics of high-power pulsed semiconductor lasers (1060 nm) operating at increased (up to 90 °C) temperatures
    
    Kvantovaya Elektronika, 51:2 (2021),  129–132
35. Experimental technique for studying optical absorption in waveguide layers of semiconductor laser heterostructures
    
    Kvantovaya Elektronika, 51:2 (2021),  124–128
36. Spectral dynamics of quantum cascade lasers generating frequency combs in the long-wavelength infrared range
    
    Zhurnal Tekhnicheskoi Fiziki, 90:8 (2020),  1333–1336
37. Spectral characteristics of half-ring quantum-cascade lasers
    
    Optics and Spectroscopy, 128:8 (2020),  1165–1170
38. Study of the spectra of arched-cavity quantum-cascade lasers
    
    Optics and Spectroscopy, 128:6 (2020),  696–700
39. Study of the spatial and current dynamics of optical loss in semiconductor laser heterostructures by optical probing
    
    Fizika i Tekhnika Poluprovodnikov, 54:8 (2020),  734–742
40. Switching control model of closed-mode structures in large rectangular cavities based on AlGaAs/InGaAs/GaAs laser heterostructures
    
    Fizika i Tekhnika Poluprovodnikov, 54:5 (2020),  484–489
41. Modeling the spatial switch-on dynamics of a laser thyristor ($\lambda$ = 905 nm) based on an AlGaAs/InGaAs/GaAs multi-junction heterostructure
    
    Fizika i Tekhnika Poluprovodnikov, 54:5 (2020),  478–483
42. Carrier-transport processes in $n^{+}$-GaAs/$n^{0}$-GaAs/$n^{+}$-GaAs isotype heterostructures with a thin wide-gap AlGaAs barrier
    
    Fizika i Tekhnika Poluprovodnikov, 54:5 (2020),  452–457
43. Single-mode lasers (1050 nm) of mesa-stripe design based on an AlGaAs/GaAs heterostructure with an ultra-narrow waveguide
    
    Fizika i Tekhnika Poluprovodnikov, 54:4 (2020),  414–419
44. Light characteristics of narrow-stripe high-power semiconductor lasers (1060 nm) based on asymmetric AlGaAs/GaAs heterostructures with a broad waveguide
    
    Fizika i Tekhnika Poluprovodnikov, 54:4 (2020),  408–413
45. A study of the spatial-emission characteristics of quantum-cascade lasers for the 8-$\mu$m spectral range
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:22 (2020),  51–54
46. Heterostructures of quantum-cascade laser for the spectral range of 4.6 $\mu$m for obtaining a continuous-wave lasing mode
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:9 (2020),  35–38
47. Quantum-cascade lasers with a distributed Bragg reflector formed by ion-beam etching
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:7 (2020),  8–11
48. Using AlN coatings to protect the surface of AlGaAs/GaAs system heterostructures from interaction with atmospheric oxygen
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:6 (2020),  16–19
49. AlGaInAs/InP semiconductor lasers with an ultra-narrow waveguide and an increased electron barrier
    
    Kvantovaya Elektronika, 50:12 (2020),  1123–1125
50. Triple integrated laser–thyristor
    
    Kvantovaya Elektronika, 50:11 (2020),  1001–1003
51. Development and study of high-power quantum-cascade lasers emitting at 4.5 – 4.6 μm
    
    Kvantovaya Elektronika, 50:11 (2020),  989–994
52. Lasing dynamics of diode-pumped Yb – Er laser with a passive Q switch exposed to high-power external light
    
    Kvantovaya Elektronika, 50:9 (2020),  822–825
53. Leaky wave in high-power AlGaAs/InGaAs/GaAs semiconductor lasers
    
    Kvantovaya Elektronika, 50:8 (2020),  722–726
54. 10-W 4.6-μm quantum cascade lasers
    
    Kvantovaya Elektronika, 50:8 (2020),  720–721
55. Longitudinal spatial hole burning in high-power semiconductor lasers: numerical analysis
    
    Kvantovaya Elektronika, 50:2 (2020),  147–152
56. High-power (>1 W) room-temperature quantum-cascade lasers for the long-wavelength IR region
    
    Kvantovaya Elektronika, 50:2 (2020),  141–142
57. Lasing of a quantum-cascade laser with a thin upper cladding
    
    Optics and Spectroscopy, 127:2 (2019),  278–282
58. On the phase composition, morphology, and optical and electronic characteristics of AlN nanofilms grown on misoriented GaAs (100) substrates
    
    Fizika i Tekhnika Poluprovodnikov, 53:11 (2019),  1584–1592
59. Сlosed mode features in rectangular resonators based on InGaAs/AlGaAs/GaAs laser heterostructures
    
    Fizika i Tekhnika Poluprovodnikov, 53:6 (2019),  839–843
60. Specific features of carrier transport in $n^{+}$–$n^{0}$–$n^{+}$ structures with a GaAs/AlGaAs heterojunction at ultrahigh current densities
    
    Fizika i Tekhnika Poluprovodnikov, 53:6 (2019),  816–823
61. Spectral shift of quantum-cascade laser emission under the action of control voltage
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:22 (2019),  21–23
62. Generation of frequency combs by quantum cascade lasers emitting in the 8-$\mu$m wavelength range
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:20 (2019),  18–21
63. High-power quantum-cascade lasers emitting in the 8-$\mu$m wavelength range
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:14 (2019),  48–51
64. Room temperature lasing of single-mode arched-cavity quantum-cascade lasers
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:8 (2019),  31–33
65. Experimental studies of the on-state propagation dynamics of low-voltage laser-thyristors based on AlGaAs/InGaAs/GaAs heterostructures
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:8 (2019),  7–11
66. Surface topography and optical properties of thin AlN films produced on GaAs (100) substrate by reactive ion-plasma sputtering
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:5 (2019),  38–41
67. Study of multimode semiconductor lasers with buried mesas
    
    Kvantovaya Elektronika, 49:12 (2019),  1172–1174
68. Tunable single-frequency source based on a DFB laser array for the spectral region of 1.55 μm
    
    Kvantovaya Elektronika, 49:12 (2019),  1158–1162
69. Double integrated laser-thyristor
    
    Kvantovaya Elektronika, 49:11 (2019),  1011–1013
70. High-coupling distributed feedback lasers for the 1.55 μm spectral region
    
    Kvantovaya Elektronika, 49:9 (2019),  801–803
71. Ultranarrow-waveguide AlGaAs/GaAs/InGaAs lasers
    
    Kvantovaya Elektronika, 49:7 (2019),  661–665
72. Pulsed laser module based on a high-power semiconductor laser for the spectral range 1500–1600 nm
    
    Kvantovaya Elektronika, 49:5 (2019),  488–492
73. High temperature laser generation of quantum-cascade lasers in the spectral region of 8 $\mu$m
    
    Fizika Tverdogo Tela, 60:11 (2018),  2251–2254
74. Turn-on dynamics of quantum cascade lasers with a wavelength of 8100 nm at room temperature
    
    Zhurnal Tekhnicheskoi Fiziki, 88:11 (2018),  1708–1710
75. Dual-frequency generation in quantum cascade lasers of the 8-$\mu$m spectral range
    
    Optics and Spectroscopy, 125:3 (2018),  387–390
76. All-electric laser beam control based on a quantum-confined heterostructure with an integrated distributed Bragg grating
    
    Fizika i Tekhnika Poluprovodnikov, 52:12 (2018),  1491–1498
77. Effect of misorientation and preliminary etching of the substrate on the structural and optical properties of integrated GaAs/Si(100) heterostructures produced by vapor phase epitaxy
    
    Fizika i Tekhnika Poluprovodnikov, 52:8 (2018),  881–890
78. Oxygen nitrogen mixture effect on aluminum nitride synthesis by reactive ion plasma deposition
    
    Fizika i Tekhnika Poluprovodnikov, 52:2 (2018),  196–200
79. Numerical simulation of the current dependence of emission spectra of high-power pulsed lasers based on separate-confinement double heterostructures
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:11 (2018),  46–52
80. Effect of the waveguide layer thickness on output characteristics of semiconductor lasers with emission wavelength from 1500 to 1600 nm
    
    Kvantovaya Elektronika, 48:3 (2018),  197–200
81. Increase in the internal optical loss with increasing pump current and the output power of quantum well lasers
    
    Fizika i Tekhnika Poluprovodnikov, 51:7 (2017),  998–1003
82. A laser unit for photodynamic therapy and robot-assisted microsurgery in dentistry
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:11 (2017),  12–19
83. All-optical modulator cells based on AlGaAs/GaAs/InGaAs 905-nm laser heterostructures
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:2 (2017),  31–37
84. Semiconductor AlGaInAs/InP lasers with ultra-narrow waveguides
    
    Kvantovaya Elektronika, 47:3 (2017),  272–274
85. Study of the pulse characteristics of semiconductor lasers with a broadened waveguide at low temperatures (110–120 K)
    
    Fizika i Tekhnika Poluprovodnikov, 50:10 (2016),  1414–1419
86. Room-temperature operation of quantum cascade lasers at a wavelength of 5.8 $\mu$m
    
    Fizika i Tekhnika Poluprovodnikov, 50:10 (2016),  1320–1324
87. On the problem of internal optical loss and current leakage in laser heterostructures based on AlGaInAs/InP solid solutions
    
    Fizika i Tekhnika Poluprovodnikov, 50:9 (2016),  1247–1252
88. Narrowing of the emission spectra of high-power laser diodes with a volume Bragg grating recorded in photo-thermo-refractive glass
    
    Fizika i Tekhnika Poluprovodnikov, 50:6 (2016),  834–838
89. Dependence of the electron capture velocity on the quantum-well depth in semiconductor lasers
    
    Fizika i Tekhnika Poluprovodnikov, 50:5 (2016),  679–682
90. Threshold characteristics of a semiconductor quantum-well laser: inclusion of global electroneutrality in the structure
    
    Kvantovaya Elektronika, 46:9 (2016),  777–781
91. Integrated high-order surface diffraction gratings for diode lasers
    
    Kvantovaya Elektronika, 45:12 (2015),  1091–1097
92. Optimisation of cavity parameters for lasers based on AlGaInAsP/InP solid solutions (λ=1470 nm)
    
    Kvantovaya Elektronika, 45:10 (2015),  879–883
93. Study of the absorption coefficient in layers of a semiconductor laser heterostructure
    
    Kvantovaya Elektronika, 45:7 (2015),  604–606
94. Effect of laser cavity parameters on saturation of light – current characteristics of high-power pulsed lasers
    
    Kvantovaya Elektronika, 45:7 (2015),  597–600
95. Saturation of light – current characteristics of high-power lasers (λ = 1.0 – 1.1 mm) in pulsed regime
    
    Kvantovaya Elektronika, 44:11 (2014),  993–996
96. Spectral characteristics of multimode semiconductor lasers with a high-order surface diffraction grating
    
    Kvantovaya Elektronika, 44:10 (2014),  907–911


97. Quantum cascade lasers for the 8-$\mu$m spectral range: technology, design, and analysis
    
    UFN, 194:1 (2024),  98–105