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Slipchenko Sergey Olegovich

Publications in Math-Net.Ru

  1. Температурная зависимость выходной оптической мощности полупроводниковых лазеров-тиристоров на основе гетероструктур AlGaAs/GaAs/InGaAs

    Kvantovaya Elektronika, 54:4 (2024),  218–223
  2. Квантовые каскадные лазеры InGaAs/AlInAs/InP с отражающими и просветляющими оптическими покрытиями

    Kvantovaya Elektronika, 54:2 (2024),  100–103
  3. Metal–dielectric mirror coatings for 4–5-μm quantum-cascade lasers

    Kvantovaya Elektronika, 53:8 (2023),  641–644
  4. High-power multimode semiconductor lasers (976 nm) based on asymmetric heterostructures with a broadened waveguide and reduced vertical divergence

    Kvantovaya Elektronika, 53:5 (2023),  374–378
  5. Dielectric highly reflective mirror coatings for quantum cascade lasers with 4 - 5 μm emission wavelength

    Kvantovaya Elektronika, 53:5 (2023),  370–373
  6. Cavity optimisation of high-power InGaAs/AlGaAs/GaAs semiconductor lasers (λ=1060 nm) for efficient operation at ultrahigh pulsed pump currents

    Kvantovaya Elektronika, 53:1 (2023),  17–24
  7. High power and repetition rate integral laser source (1060 nm) based on laser diode array and 2D multi-element opto-thyristor array as a high-speed current switch

    Kvantovaya Elektronika, 53:1 (2023),  11–16
  8. Quasi-cw high-power laser diode mini bars (λ=976 nm) with increased length of a resonator based on asymmetric heterostructures with a broadened waveguide

    Kvantovaya Elektronika, 53:1 (2023),  6–10
  9. Laser diodes (850nm) based on an asymmetric AlGaAs/GaAs heterostructure with a bulk active region for generating high-power subnanosecond optical pulses

    Kvantovaya Elektronika, 53:1 (2023),  1–5
  10. High-power laser diodes based on InGaAs(Р)/Al(In)GaAs(P)/GaAs heterostructures with low internal optical losses

    Kvantovaya Elektronika, 52:12 (2022),  1152–1165
  11. Lateral waveguide mode selection for the development of single-mode ridge lasers with a distributed Bragg mirror

    Kvantovaya Elektronika, 52:10 (2022),  889–894
  12. Investigation of the quasi-cw heating dynamics of an active region of high-power semiconductor lasers (λ = 1060 nm) with an ultra-wide emitting aperture (800 μm)

    Kvantovaya Elektronika, 52:9 (2022),  794–798
  13. Analysis of light–current characteristics of high-power semiconductor lasers (1060 nm) in a steady-state 2D model

    Kvantovaya Elektronika, 52:4 (2022),  343–350
  14. High-power quasi-cw semiconductor lasers (1060 nm) with an ultra-wide emitting aperture

    Kvantovaya Elektronika, 52:4 (2022),  340–342
  15. High-power mesa-stripe semiconductor lasers (910 nm) with an ultra-wide emitting aperture based on tunnel-coupled InGaAs/AlGaAs/GaAs heterostructures

    Kvantovaya Elektronika, 52:2 (2022),  174–178
  16. Vertical stacks of pulsed (100 ns) mesa-stripe semiconductor lasers with an ultra-wide (800 μm) aperture emitting kilowatt-level peak power at a wavelength of 1060 nm

    Kvantovaya Elektronika, 52:2 (2022),  171–173
  17. Operating characteristics of semiconductor quantum well lasers as functions of the waveguide region thickness

    Fizika i Tekhnika Poluprovodnikov, 55:12 (2021),  1229–1235
  18. Quantum-cascade laser with radiation output through a textured layer

    Fizika i Tekhnika Poluprovodnikov, 55:11 (2021),  1081–1085
  19. Surface emitting quantum-cascade ring laser

    Fizika i Tekhnika Poluprovodnikov, 55:7 (2021),  602–606
  20. Turn on process spatial dynamics of a thyristor laser (905nm) based on an AlGaAs/InGaAs/GaAs heterostructure

    Fizika i Tekhnika Poluprovodnikov, 55:5 (2021),  466–472
  21. Analysis of the threshold conditions and lasing efficiency of internally circulating modes in large rectangular cavities based on AlGaAs/GaAs/InGaAs laser heterostructures

    Fizika i Tekhnika Poluprovodnikov, 55:5 (2021),  460–465
  22. Isotype $n$-AlGaAs/$n$-GaAs heterostructures optimized for efficient interband radiative recombination under current pumping

    Fizika i Tekhnika Poluprovodnikov, 55:5 (2021),  427–433
  23. High-power CW InGaAs/AlGaAs (1070 nm) lasers with a broadened lateral waveguide of a mesa-stripe structure

    Fizika i Tekhnika Poluprovodnikov, 55:4 (2021),  344–348
  24. Structural and spectroscopic studies of epitaxial GaAs layers grown on compliant substrates based on a superstructure layer and protoporous silicon

    Fizika i Tekhnika Poluprovodnikov, 55:1 (2021),  86–95
  25. Spectroscopic studies of integrated GaAs/Si heterostructures

    Fizika i Tekhnika Poluprovodnikov, 55:1 (2021),  34–40
  26. Heterostructures of quantum-cascade lasers with nonselective overgrowth by metalorganic vapour phase epitaxy

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:24 (2021),  46–50
  27. Output optical power dynamics of semiconductor lasers (1070 nm) with a few-mode lateral waveguide of mesa-stripe design at ultrahigh drive currents

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:7 (2021),  42–45
  28. Optical absorption in a waveguide based on an n-type AlGaAs heterostructure

    Kvantovaya Elektronika, 51:11 (2021),  987–991
  29. High-power pulsed hybrid semiconductor lasers emitting in the wavelength range 900–920 nm

    Kvantovaya Elektronika, 51:10 (2021),  912–914
  30. High-power AlGaInAs/InP semiconductor lasers with an ultra-narrow waveguide emitting in the spectral range 1.9–2.0 μm

    Kvantovaya Elektronika, 51:10 (2021),  909–911
  31. InGaAs/AlGaAs/GaAs semiconductor lasers ($\lambda$ = 900–920 nm) with broadened asymmetric waveguides and improved current–voltage characteristics

    Kvantovaya Elektronika, 51:10 (2021),  905–908
  32. Comparison of AlGaInAs/InP semiconductor lasers (λ = 1450–1500 nm) with ultra-narrow and strongly asymmetric waveguides

    Kvantovaya Elektronika, 51:4 (2021),  283–286
  33. Semiconductor AlGaInAs/InP lasers (λ = 1450 – 1500 nm) with a strongly asymmetric waveguide

    Kvantovaya Elektronika, 51:2 (2021),  133–136
  34. Light–current characteristics of high-power pulsed semiconductor lasers (1060 nm) operating at increased (up to 90 °C) temperatures

    Kvantovaya Elektronika, 51:2 (2021),  129–132
  35. Experimental technique for studying optical absorption in waveguide layers of semiconductor laser heterostructures

    Kvantovaya Elektronika, 51:2 (2021),  124–128
  36. Spectral dynamics of quantum cascade lasers generating frequency combs in the long-wavelength infrared range

    Zhurnal Tekhnicheskoi Fiziki, 90:8 (2020),  1333–1336
  37. Spectral characteristics of half-ring quantum-cascade lasers

    Optics and Spectroscopy, 128:8 (2020),  1165–1170
  38. Study of the spectra of arched-cavity quantum-cascade lasers

    Optics and Spectroscopy, 128:6 (2020),  696–700
  39. Study of the spatial and current dynamics of optical loss in semiconductor laser heterostructures by optical probing

    Fizika i Tekhnika Poluprovodnikov, 54:8 (2020),  734–742
  40. Switching control model of closed-mode structures in large rectangular cavities based on AlGaAs/InGaAs/GaAs laser heterostructures

    Fizika i Tekhnika Poluprovodnikov, 54:5 (2020),  484–489
  41. Modeling the spatial switch-on dynamics of a laser thyristor ($\lambda$ = 905 nm) based on an AlGaAs/InGaAs/GaAs multi-junction heterostructure

    Fizika i Tekhnika Poluprovodnikov, 54:5 (2020),  478–483
  42. Carrier-transport processes in $n^{+}$-GaAs/$n^{0}$-GaAs/$n^{+}$-GaAs isotype heterostructures with a thin wide-gap AlGaAs barrier

    Fizika i Tekhnika Poluprovodnikov, 54:5 (2020),  452–457
  43. Single-mode lasers (1050 nm) of mesa-stripe design based on an AlGaAs/GaAs heterostructure with an ultra-narrow waveguide

    Fizika i Tekhnika Poluprovodnikov, 54:4 (2020),  414–419
  44. Light characteristics of narrow-stripe high-power semiconductor lasers (1060 nm) based on asymmetric AlGaAs/GaAs heterostructures with a broad waveguide

    Fizika i Tekhnika Poluprovodnikov, 54:4 (2020),  408–413
  45. A study of the spatial-emission characteristics of quantum-cascade lasers for the 8-$\mu$m spectral range

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:22 (2020),  51–54
  46. Heterostructures of quantum-cascade laser for the spectral range of 4.6 $\mu$m for obtaining a continuous-wave lasing mode

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:9 (2020),  35–38
  47. AlGaInAs/InP semiconductor lasers with an ultra-narrow waveguide and an increased electron barrier

    Kvantovaya Elektronika, 50:12 (2020),  1123–1125
  48. Triple integrated laser–thyristor

    Kvantovaya Elektronika, 50:11 (2020),  1001–1003
  49. Development and study of high-power quantum-cascade lasers emitting at 4.5 – 4.6 μm

    Kvantovaya Elektronika, 50:11 (2020),  989–994
  50. Lasing dynamics of diode-pumped Yb – Er laser with a passive Q switch exposed to high-power external light

    Kvantovaya Elektronika, 50:9 (2020),  822–825
  51. Leaky wave in high-power AlGaAs/InGaAs/GaAs semiconductor lasers

    Kvantovaya Elektronika, 50:8 (2020),  722–726
  52. 10-W 4.6-μm quantum cascade lasers

    Kvantovaya Elektronika, 50:8 (2020),  720–721
  53. Longitudinal spatial hole burning in high-power semiconductor lasers: numerical analysis

    Kvantovaya Elektronika, 50:2 (2020),  147–152
  54. High-power (>1 W) room-temperature quantum-cascade lasers for the long-wavelength IR region

    Kvantovaya Elektronika, 50:2 (2020),  141–142
  55. Сlosed mode features in rectangular resonators based on InGaAs/AlGaAs/GaAs laser heterostructures

    Fizika i Tekhnika Poluprovodnikov, 53:6 (2019),  839–843
  56. Specific features of carrier transport in $n^{+}$–$n^{0}$–$n^{+}$ structures with a GaAs/AlGaAs heterojunction at ultrahigh current densities

    Fizika i Tekhnika Poluprovodnikov, 53:6 (2019),  816–823
  57. Generation of frequency combs by quantum cascade lasers emitting in the 8-$\mu$m wavelength range

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:20 (2019),  18–21
  58. High-power quantum-cascade lasers emitting in the 8-$\mu$m wavelength range

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:14 (2019),  48–51
  59. Room temperature lasing of single-mode arched-cavity quantum-cascade lasers

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:8 (2019),  31–33
  60. Experimental studies of the on-state propagation dynamics of low-voltage laser-thyristors based on AlGaAs/InGaAs/GaAs heterostructures

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:8 (2019),  7–11
  61. Study of multimode semiconductor lasers with buried mesas

    Kvantovaya Elektronika, 49:12 (2019),  1172–1174
  62. Tunable single-frequency source based on a DFB laser array for the spectral region of 1.55 μm

    Kvantovaya Elektronika, 49:12 (2019),  1158–1162
  63. Double integrated laser-thyristor

    Kvantovaya Elektronika, 49:11 (2019),  1011–1013
  64. High-coupling distributed feedback lasers for the 1.55 μm spectral region

    Kvantovaya Elektronika, 49:9 (2019),  801–803
  65. Ultranarrow-waveguide AlGaAs/GaAs/InGaAs lasers

    Kvantovaya Elektronika, 49:7 (2019),  661–665
  66. Pulsed laser module based on a high-power semiconductor laser for the spectral range 1500–1600 nm

    Kvantovaya Elektronika, 49:5 (2019),  488–492
  67. High temperature laser generation of quantum-cascade lasers in the spectral region of 8 $\mu$m

    Fizika Tverdogo Tela, 60:11 (2018),  2251–2254
  68. Turn-on dynamics of quantum cascade lasers with a wavelength of 8100 nm at room temperature

    Zhurnal Tekhnicheskoi Fiziki, 88:11 (2018),  1708–1710
  69. Dual-frequency generation in quantum cascade lasers of the 8-$\mu$m spectral range

    Optics and Spectroscopy, 125:3 (2018),  387–390
  70. All-electric laser beam control based on a quantum-confined heterostructure with an integrated distributed Bragg grating

    Fizika i Tekhnika Poluprovodnikov, 52:12 (2018),  1491–1498
  71. Effect of the waveguide layer thickness on output characteristics of semiconductor lasers with emission wavelength from 1500 to 1600 nm

    Kvantovaya Elektronika, 48:3 (2018),  197–200
  72. All-optical modulator cells based on AlGaAs/GaAs/InGaAs 905-nm laser heterostructures

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:2 (2017),  31–37
  73. Semiconductor AlGaInAs/InP lasers with ultra-narrow waveguides

    Kvantovaya Elektronika, 47:3 (2017),  272–274
  74. Study of the pulse characteristics of semiconductor lasers with a broadened waveguide at low temperatures (110–120 K)

    Fizika i Tekhnika Poluprovodnikov, 50:10 (2016),  1414–1419
  75. On the problem of internal optical loss and current leakage in laser heterostructures based on AlGaInAs/InP solid solutions

    Fizika i Tekhnika Poluprovodnikov, 50:9 (2016),  1247–1252
  76. Integrated high-order surface diffraction gratings for diode lasers

    Kvantovaya Elektronika, 45:12 (2015),  1091–1097
  77. Optimisation of cavity parameters for lasers based on AlGaInAsP/InP solid solutions (λ=1470 nm)

    Kvantovaya Elektronika, 45:10 (2015),  879–883
  78. Study of the absorption coefficient in layers of a semiconductor laser heterostructure

    Kvantovaya Elektronika, 45:7 (2015),  604–606
  79. Effect of laser cavity parameters on saturation of light – current characteristics of high-power pulsed lasers

    Kvantovaya Elektronika, 45:7 (2015),  597–600
  80. Saturation of light – current characteristics of high-power lasers (λ = 1.0 – 1.1 mm) in pulsed regime

    Kvantovaya Elektronika, 44:11 (2014),  993–996
  81. Spectral characteristics of multimode semiconductor lasers with a high-order surface diffraction grating

    Kvantovaya Elektronika, 44:10 (2014),  907–911

  82. Quantum cascade lasers for the 8-$\mu$m spectral range: technology, design, and analysis

    UFN, 194:1 (2024),  98–105

© Steklov Math. Inst. of RAS, 2024