Bakhvalov Kirill Viktorovich

Publications in Math-Net.Ru

1. High-power quasi-cw semiconductor lasers (1060 nm) with an ultra-wide emitting aperture
   
   Kvantovaya Elektronika, 52:4 (2022),  340–342
2. High-power CW InGaAs/AlGaAs (1070 nm) lasers with a broadened lateral waveguide of a mesa-stripe structure
   
   Fizika i Tekhnika Poluprovodnikov, 55:4 (2021),  344–348
3. Output optical power dynamics of semiconductor lasers (1070 nm) with a few-mode lateral waveguide of mesa-stripe design at ultrahigh drive currents
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:7 (2021),  42–45
4. Optical absorption in a waveguide based on an n-type AlGaAs heterostructure
   
   Kvantovaya Elektronika, 51:11 (2021),  987–991
5. High-power AlGaInAs/InP semiconductor lasers with an ultra-narrow waveguide emitting in the spectral range 1.9–2.0 μm
   
   Kvantovaya Elektronika, 51:10 (2021),  909–911
6. InGaAs/AlGaAs/GaAs semiconductor lasers ($\lambda$ = 900–920 nm) with broadened asymmetric waveguides and improved current–voltage characteristics
   
   Kvantovaya Elektronika, 51:10 (2021),  905–908
7. Single-mode lasers (1050 nm) of mesa-stripe design based on an AlGaAs/GaAs heterostructure with an ultra-narrow waveguide
   
   Fizika i Tekhnika Poluprovodnikov, 54:4 (2020),  414–419
8. Light characteristics of narrow-stripe high-power semiconductor lasers (1060 nm) based on asymmetric AlGaAs/GaAs heterostructures with a broad waveguide
   
   Fizika i Tekhnika Poluprovodnikov, 54:4 (2020),  408–413
9. Study of the pulse characteristics of semiconductor lasers with a broadened waveguide at low temperatures (110–120 K)
   
   Fizika i Tekhnika Poluprovodnikov, 50:10 (2016),  1414–1419
10. On the problem of internal optical loss and current leakage in laser heterostructures based on AlGaInAs/InP solid solutions
    
    Fizika i Tekhnika Poluprovodnikov, 50:9 (2016),  1247–1252
11. Dependence of the electron capture velocity on the quantum-well depth in semiconductor lasers
    
    Fizika i Tekhnika Poluprovodnikov, 50:5 (2016),  679–682
12. Optimisation of cavity parameters for lasers based on AlGaInAsP/InP solid solutions (λ=1470 nm)
    
    Kvantovaya Elektronika, 45:10 (2015),  879–883
13. Spectral characteristics of multimode semiconductor lasers with a high-order surface diffraction grating
    
    Kvantovaya Elektronika, 44:10 (2014),  907–911