Steinman Eduard Aleksandrovich

Publications in Math-Net.Ru

1. Effect of boron impurity on the light-emitting properties of dislocation structures formed in silicon by Si$^{+}$ ion implantation
   
   Fizika i Tekhnika Poluprovodnikov, 52:7 (2018),  702–707
2. Physical properties of carbon films obtained by methane pyrolysis in an electric field
   
   Zhurnal Tekhnicheskoi Fiziki, 86:3 (2016),  110–113
3. Magnetic properties of crystals of the molecular complex between fullerene C60 and an organic donor $9,9'$-trans-bis(telluraxanthenyl)
   
   Pis'ma v Zh. Èksper. Teoret. Fiz., 74:8 (2001),  462–465
4. Discrete spectrum of nonequilibrium dislocation structure in germanium
   
   Dokl. Akad. Nauk SSSR, 305:5 (1989),  1104–1106
5. Systematics of dislocation photoluminescence lines in silicon
   
   Fizika Tverdogo Tela, 30:10 (1988),  3177–3179
6. Shear stress-induced rearrangement of dislocation optical centers
   
   Fizika Tverdogo Tela, 29:3 (1987),  879–881
7. Quenching effect on photoluminescence dislocation spectrum in silicon
   
   Fizika Tverdogo Tela, 28:4 (1986),  1172–1176
8. Line polarization of dislocation luminescence in silicon $\mathrm{NaI}$
   
   Fizika Tverdogo Tela, 28:4 (1986),  1015–1019
9. Dislocation photoluminescence spectra at annealing of deformed silicon samples
   
   Fizika Tverdogo Tela, 26:6 (1984),  1772–1776
10. Dislocation luminescence in $\mathrm{Ge}$
    
    Fizika Tverdogo Tela, 26:3 (1984),  677–683