Publications in Math-Net.Ru
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Boron implanted in silicon: Segregation at angular configurations of the silicon/silicon dioxide oxidation boundary
Pis'ma v Zh. Èksper. Teoret. Fiz., 73:9 (2001), 536–541
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Numerical simulation for the problem of dynamics of oxide film growth in
semiconductor substrates on the basis of geometrical approach and the
Deal-Grove method
Num. Meth. Prog., 2:1 (2001), 92–111
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Numerical modeling and computer algorithm for the process of segregation of alloy impurities at the boundary of an
oxidation wave in semiconductor substrates
Num. Meth. Prog., 2:1 (2001), 12–26
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Biexciton in a strong magnetic field
Fizika Tverdogo Tela, 25:4 (1983), 1063–1067
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Уравнение состояния холодного вещества в сверхсильном магнитном поле
TVT, 19:1 (1981), 206–208
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