Nikolaev Dmitrii Nikolaevich

Publications in Math-Net.Ru

1. High-power multimode semiconductor lasers (976 nm) based on asymmetric heterostructures with a broadened waveguide and reduced vertical divergence
   
   Kvantovaya Elektronika, 53:5 (2023),  374–378
2. Equation of state of iron oxide at a pressure $\le1$ TPa
   
   TVT, 61:2 (2023),  318–320
3. Structural and spectroscopic studies of epitaxial GaAs layers grown on compliant substrates based on a superstructure layer and protoporous silicon
   
   Fizika i Tekhnika Poluprovodnikov, 55:1 (2021),  86–95
4. Spectroscopic studies of integrated GaAs/Si heterostructures
   
   Fizika i Tekhnika Poluprovodnikov, 55:1 (2021),  34–40
5. Измерения коэффициента пропускания кремния под воздействием излучения интенсивных ударных волн в ксеноне
   
   TVT, 59:6 (2021),  956–959
6. Излучение кремния при давлении ударного сжатия $68$ ГПа и в процессе разгрузки в вакуум
   
   TVT, 59:6 (2021),  865–868
7. Ударная сжимаемость монокристаллического кремния в диапазоне давлений $280$–$510$ ГПа
   
   TVT, 59:6 (2021),  860–864
8. Single-mode lasers (1050 nm) of mesa-stripe design based on an AlGaAs/GaAs heterostructure with an ultra-narrow waveguide
   
   Fizika i Tekhnika Poluprovodnikov, 54:4 (2020),  414–419
9. Light characteristics of narrow-stripe high-power semiconductor lasers (1060 nm) based on asymmetric AlGaAs/GaAs heterostructures with a broad waveguide
   
   Fizika i Tekhnika Poluprovodnikov, 54:4 (2020),  408–413
10. Changes in the photoluminescence properties of semiconductor heterostructures after ion-beam etching
    
    Fizika i Tekhnika Poluprovodnikov, 53:11 (2019),  1579–1583
11. Study of multimode semiconductor lasers with buried mesas
    
    Kvantovaya Elektronika, 49:12 (2019),  1172–1174
12. Effect of misorientation and preliminary etching of the substrate on the structural and optical properties of integrated GaAs/Si(100) heterostructures produced by vapor phase epitaxy
    
    Fizika i Tekhnika Poluprovodnikov, 52:8 (2018),  881–890
13. Influence of substrate misorientation on the composition and the structural and photoluminescence properties of epitaxial layers grown on GaAs(100)
    
    Fizika i Tekhnika Poluprovodnikov, 52:1 (2018),  118–124
14. Experimental studies of the effects of atomic ordering in epitaxial Ga$_{x}$In$_{1-x}$P alloys on their structural and morphological properties
    
    Fizika i Tekhnika Poluprovodnikov, 51:8 (2017),  1131–1137
15. Epitaxial Al$_{x}$Ga$_{1-x}$As : Mg alloys with different conductivity types
    
    Fizika i Tekhnika Poluprovodnikov, 51:1 (2017),  124–132
16. Study of the absorption coefficient in layers of a semiconductor laser heterostructure
    
    Kvantovaya Elektronika, 45:7 (2015),  604–606
17. Effect of laser cavity parameters on saturation of light – current characteristics of high-power pulsed lasers
    
    Kvantovaya Elektronika, 45:7 (2015),  597–600
18. Saturation of light – current characteristics of high-power lasers (λ = 1.0 – 1.1 mm) in pulsed regime
    
    Kvantovaya Elektronika, 44:11 (2014),  993–996