Nikolaev Dmitrii Nikolaevich

Publications in Math-Net.Ru

1. A pulsed photoactivatable switch based on a semiconductor laser and an AlGaAs/GaAs high-voltage photodiode
   
   Fizika i Tekhnika Poluprovodnikov, 58:12 (2024),  703–708
2. Micro-Raman spectroscopy study of radiation defects formed by Ga$^+$ focused ion beam in GaAs/Al$_{0.3}$Ga$_{0.7}$As
   
   Fizika i Tekhnika Poluprovodnikov, 58:10 (2024),  552–555
3. High-power multimode semiconductor lasers (976 nm) based on asymmetric heterostructures with a broadened waveguide and reduced vertical divergence
   
   Kvantovaya Elektronika, 53:5 (2023),  374–378
4. Equation of state of iron oxide at a pressure $\le1$ TPa
   
   TVT, 61:2 (2023),  318–320
5. On the effect of etching with a focused Ga$^+$ ion beam in the energy range 12–30 keV on the luminescent properties Al$_{0.18}$Ga$_{0.82}$As/GaAs/Al$_{0.18}$Ga$_{0.82}$As heterostructure
   
   Fizika i Tekhnika Poluprovodnikov, 56:12 (2022),  1120–1124
6. Structural and spectroscopic studies of epitaxial GaAs layers grown on compliant substrates based on a superstructure layer and protoporous silicon
   
   Fizika i Tekhnika Poluprovodnikov, 55:1 (2021),  86–95
7. Spectroscopic studies of integrated GaAs/Si heterostructures
   
   Fizika i Tekhnika Poluprovodnikov, 55:1 (2021),  34–40
8. Measurements of the transmission of silicon under the effect of the radiation of intense shock waves in xenon
   
   TVT, 59:6 (2021),  956–959
9. Silicon radiation at a shock compression pressure of $68$ GPa and during unloading into a vacuum
   
   TVT, 59:6 (2021),  865–868
10. Shock compressibility of single-crystal silicon in the pressure range $280$–$510$ GPa
    
    TVT, 59:6 (2021),  860–864
11. Single-mode lasers (1050 nm) of mesa-stripe design based on an AlGaAs/GaAs heterostructure with an ultra-narrow waveguide
    
    Fizika i Tekhnika Poluprovodnikov, 54:4 (2020),  414–419
12. Light characteristics of narrow-stripe high-power semiconductor lasers (1060 nm) based on asymmetric AlGaAs/GaAs heterostructures with a broad waveguide
    
    Fizika i Tekhnika Poluprovodnikov, 54:4 (2020),  408–413
13. Changes in the photoluminescence properties of semiconductor heterostructures after ion-beam etching
    
    Fizika i Tekhnika Poluprovodnikov, 53:11 (2019),  1579–1583
14. Study of multimode semiconductor lasers with buried mesas
    
    Kvantovaya Elektronika, 49:12 (2019),  1172–1174
15. Effect of misorientation and preliminary etching of the substrate on the structural and optical properties of integrated GaAs/Si(100) heterostructures produced by vapor phase epitaxy
    
    Fizika i Tekhnika Poluprovodnikov, 52:8 (2018),  881–890
16. Influence of substrate misorientation on the composition and the structural and photoluminescence properties of epitaxial layers grown on GaAs(100)
    
    Fizika i Tekhnika Poluprovodnikov, 52:1 (2018),  118–124
17. Experimental studies of the effects of atomic ordering in epitaxial Ga$_{x}$In$_{1-x}$P alloys on their structural and morphological properties
    
    Fizika i Tekhnika Poluprovodnikov, 51:8 (2017),  1131–1137
18. Epitaxial Al$_{x}$Ga$_{1-x}$As : Mg alloys with different conductivity types
    
    Fizika i Tekhnika Poluprovodnikov, 51:1 (2017),  124–132
19. Study of the absorption coefficient in layers of a semiconductor laser heterostructure
    
    Kvantovaya Elektronika, 45:7 (2015),  604–606
20. Effect of laser cavity parameters on saturation of light – current characteristics of high-power pulsed lasers
    
    Kvantovaya Elektronika, 45:7 (2015),  597–600
21. Saturation of light – current characteristics of high-power lasers (λ = 1.0 – 1.1 mm) in pulsed regime
    
    Kvantovaya Elektronika, 44:11 (2014),  993–996