Shamakhov Viktor Valentinovich

Publications in Math-Net.Ru

1. High-power multimode semiconductor lasers (976 nm) based on asymmetric heterostructures with a broadened waveguide and reduced vertical divergence
   
   Kvantovaya Elektronika, 53:5 (2023),  374–378
2. Laser diodes (850nm) based on an asymmetric AlGaAs/GaAs heterostructure with a bulk active region for generating high-power subnanosecond optical pulses
   
   Kvantovaya Elektronika, 53:1 (2023),  1–5
3. High-power laser diodes based on InGaAs(Р)/Al(In)GaAs(P)/GaAs heterostructures with low internal optical losses
   
   Kvantovaya Elektronika, 52:12 (2022),  1152–1165
4. High-power CW InGaAs/AlGaAs (1070 nm) lasers with a broadened lateral waveguide of a mesa-stripe structure
   
   Fizika i Tekhnika Poluprovodnikov, 55:4 (2021),  344–348
5. Output optical power dynamics of semiconductor lasers (1070 nm) with a few-mode lateral waveguide of mesa-stripe design at ultrahigh drive currents
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:7 (2021),  42–45
6. Optical absorption in a waveguide based on an n-type AlGaAs heterostructure
   
   Kvantovaya Elektronika, 51:11 (2021),  987–991
7. Light–current characteristics of high-power pulsed semiconductor lasers (1060 nm) operating at increased (up to 90 °C) temperatures
   
   Kvantovaya Elektronika, 51:2 (2021),  129–132
8. Single-mode lasers (1050 nm) of mesa-stripe design based on an AlGaAs/GaAs heterostructure with an ultra-narrow waveguide
   
   Fizika i Tekhnika Poluprovodnikov, 54:4 (2020),  414–419
9. Light characteristics of narrow-stripe high-power semiconductor lasers (1060 nm) based on asymmetric AlGaAs/GaAs heterostructures with a broad waveguide
   
   Fizika i Tekhnika Poluprovodnikov, 54:4 (2020),  408–413
10. Study of multimode semiconductor lasers with buried mesas
    
    Kvantovaya Elektronika, 49:12 (2019),  1172–1174
11. Ultranarrow-waveguide AlGaAs/GaAs/InGaAs lasers
    
    Kvantovaya Elektronika, 49:7 (2019),  661–665
12. Epitaxial Al$_{x}$Ga$_{1-x}$As : Mg alloys with different conductivity types
    
    Fizika i Tekhnika Poluprovodnikov, 51:1 (2017),  124–132
13. On the problem of internal optical loss and current leakage in laser heterostructures based on AlGaInAs/InP solid solutions
    
    Fizika i Tekhnika Poluprovodnikov, 50:9 (2016),  1247–1252
14. Study of the absorption coefficient in layers of a semiconductor laser heterostructure
    
    Kvantovaya Elektronika, 45:7 (2015),  604–606
15. Effect of laser cavity parameters on saturation of light – current characteristics of high-power pulsed lasers
    
    Kvantovaya Elektronika, 45:7 (2015),  597–600
16. Saturation of light – current characteristics of high-power lasers (λ = 1.0 – 1.1 mm) in pulsed regime
    
    Kvantovaya Elektronika, 44:11 (2014),  993–996