Kozlovsky Vitaly V

Publications in Math-Net.Ru

1. Локальная диагностика спиновых дефектов в облученных SiC-диодах Шоттки
   
   Pis'ma v Zh. Èksper. Teoret. Fiz., 120:5 (2024),  367–373
2. Influence of the proton irradiation temperature on the characteristics of high-power high-voltage silicon carbide Schottky diodes
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:6 (2020),  35–37
3. Effect of irradiation with 15-MeV protons on low frequency noise in power SiC MOSFETs
   
   Fizika i Tekhnika Poluprovodnikov, 53:12 (2019),  1604–1608
4. Impact of high energy elctron irradiation on surge currents in 4$H$-SiC JBS Schottky diodes
   
   Fizika i Tekhnika Poluprovodnikov, 53:10 (2019),  1448–1452
5. Low-temperature annealing of lightly doped $n$-4$H$-SiC layers after irradiation with fast electrons
   
   Fizika i Tekhnika Poluprovodnikov, 53:7 (2019),  991–994
6. Effect of electron irradiation with an energy of 0.9 MeV on the I–V characteristics and low-frequency noise in 4$H$-SiC pin diodes
   
   Fizika i Tekhnika Poluprovodnikov, 53:4 (2019),  555–561
7. Radiation-induced damage of silicon-carbide diodes by high-energy particles
   
   Fizika i Tekhnika Poluprovodnikov, 52:13 (2018),  1651–1655
8. Galvanic and capacitive effects in $n$-SiC conductivity compensation by radiation-induced defects
   
   Fizika i Tekhnika Poluprovodnikov, 52:12 (2018),  1532–1534
9. Diversity of properties of device structures based on group-III nitrides, related to modification of the fractal-percolation system
   
   Fizika i Tekhnika Poluprovodnikov, 52:7 (2018),  804–811
10. Formation of radiation defects by proton braking in lightly doped $n$- and $p$-SiC layers
    
    Fizika i Tekhnika Poluprovodnikov, 52:3 (2018),  327–332
11. Effects of irradiation with 8-MeV protons on $n$-3$C$-SiC heteroepitaxial layers
    
    Fizika i Tekhnika Poluprovodnikov, 51:8 (2017),  1088–1090
12. Effect of the energy of bombarding electrons on the conductivity of $n$-4$H$-SiC (CVD) epitaxial layers
    
    Fizika i Tekhnika Poluprovodnikov, 51:3 (2017),  311–316
13. A study of the effect of electron and proton irradiation on 4$H$-SiC device structures
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:22 (2017),  63–67
14. Specific features of proton interaction with transistor structures having a 2D AlGaN/GaN channel
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:21 (2016),  39–46
15. DIFFUSION OF THE SUBSTITUTION IMPURITY IN THE ION-IRRADIATED CRYSTAL
    
    Zhurnal Tekhnicheskoi Fiziki, 55:11 (1985),  2175–2178