Belyakov V A

Publications in Math-Net.Ru

1. Effect of double recess technology on the parameters of HEMT transistors on GaAs and InP substrates
   
   Fizika i Tekhnika Poluprovodnikov, 55:10 (2021),  890–894
2. InAlAs/InGaAs/InP high-electron-mobility transistors with a composite channel and higher breakdown characteristics
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:21 (2019),  29–33
3. THz stimulated emission from simple superlattice in positive differential conductivity region
   
   Fizika i Tekhnika Poluprovodnikov, 52:4 (2018),  463
4. Molecular-beam epitaxy of InGaAs/InAlAs/AlAs structures for heterobarrier varactors
   
   Fizika i Tekhnika Poluprovodnikov, 51:11 (2017),  1484–1488
5. Stimulated emission at transitions between Wannier–Stark ladders in semiconductor superlattices
   
   Pis'ma v Zh. Èksper. Teoret. Fiz., 102:4 (2015),  235–239
6. Initial experiments on high-frequency plasma-heating on tokamak Tuman-3
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:5 (1985),  315–318