Fefelov A G

Publications in Math-Net.Ru

1. Effect of double recess technology on the parameters of HEMT transistors on GaAs and InP substrates
   
   Fizika i Tekhnika Poluprovodnikov, 55:10 (2021),  890–894
2. Comparison of the efficiency of promising heterostructure frequency-multiplier diodes of the THz-frequency range
   
   Fizika i Tekhnika Poluprovodnikov, 54:10 (2020),  1158–1162
3. InAlAs/InGaAs/InP high-electron-mobility transistors with a composite channel and higher breakdown characteristics
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:21 (2019),  29–33
4. Analysis of the behavior of nonequilibrium semiconductor structures and microwave transistors during and after pulsed $\gamma$- and $\gamma$-neutron irradiation
   
   Fizika i Tekhnika Poluprovodnikov, 52:12 (2018),  1414–1420
5. THz stimulated emission from simple superlattice in positive differential conductivity region
   
   Fizika i Tekhnika Poluprovodnikov, 52:4 (2018),  463
6. Technology of the production of laser diodes based on GaAs/InGaAs/AlGaAs structures grown on a Ge/Si substrate
   
   Fizika i Tekhnika Poluprovodnikov, 51:11 (2017),  1530–1533
7. Molecular-beam epitaxy of InGaAs/InAlAs/AlAs structures for heterobarrier varactors
   
   Fizika i Tekhnika Poluprovodnikov, 51:11 (2017),  1484–1488
8. Stimulated emission at transitions between Wannier–Stark ladders in semiconductor superlattices
   
   Pis'ma v Zh. Èksper. Teoret. Fiz., 102:4 (2015),  235–239