Vavilova Lyudmila Sergeevna

Publications in Math-Net.Ru

1. High power and repetition rate integral laser source (1060 nm) based on laser diode array and 2D multi-element opto-thyristor array as a high-speed current switch
   
   Kvantovaya Elektronika, 53:1 (2023),  11–16
2. Ultranarrow-waveguide AlGaAs/GaAs/InGaAs lasers
   
   Kvantovaya Elektronika, 49:7 (2019),  661–665
3. Structural and optical properties of GaAs(100) with a thin surface layer doped with chromium
   
   Fizika i Tekhnika Poluprovodnikov, 50:7 (2016),  869–876
4. Optimisation of cavity parameters for lasers based on AlGaInAsP/InP solid solutions (λ=1470 nm)
   
   Kvantovaya Elektronika, 45:10 (2015),  879–883
5. Continuous short-wave ($\lambda=0,677\,\mu m$) injection-laser based on $In\,Ga\,As\,P/Ga\,As\,P$ RO DGS with $10$ mVt power
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:19 (1985),  1153–1157
6. Band lasers based on PO $In\,Ga\,As\,P/Ga\,As$ DHS ($\lambda\simeq0.87\,\mu m$) with the thin active area
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:4 (1985),  205–209
7. Low-Threshold Visible GalnAsP/GaAsP DH Lasers (${T=300}$ K, ${\lambda=0.70{-}0.66}\,\mu m,$ ${I_{\text{thresh}}\simeq1.5{-}3.2\,\text{кА}/\text{cm}^{2}}$)
   
   Fizika i Tekhnika Poluprovodnikov, 18:4 (1984),  757–758
8. Visible Low-Threshold Pulsed and Continuous InGaAsP/InGaP/GaAs DH Lasers in the $0.73{-}0.79 \mu m$ Region (${T=300}$ K, ${I_{n}=3.5{-}1.3\,\text{mA}/\text{cm}^{2}}$)
   
   Fizika i Tekhnika Poluprovodnikov, 18:1 (1984),  162–165