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Il'inskaya Natal'ya Dmitrievna

Publications in Math-Net.Ru

  1. Investigation of methods for texturing light-emitting diodes based on AlGaAs/GaAs heterostructures

    Fizika i Tekhnika Poluprovodnikov, 55:11 (2021),  1086–1090
  2. Uncooled photodiodes for detecting pulsed infrared radiation in the spectral range of 0.9–1.8 $\mu$m

    Fizika i Tekhnika Poluprovodnikov, 55:7 (2021),  607–613
  3. High-voltage 4$H$-SiC based avalanche diodes with a negative beve

    Fizika i Tekhnika Poluprovodnikov, 55:4 (2021),  349–353
  4. High-voltage 4$H$-SiC Schottky diodes with field-plate edge termination

    Fizika i Tekhnika Poluprovodnikov, 55:2 (2021),  188–194
  5. High-voltage avalanche 4$H$-SiC diodes with a protective semi-insulating area

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:6 (2021),  48–50
  6. Plasmachemical and wet etching in the postgrowth technology of solar cells based on the GaInP/GaInAs/Ge heterostructure

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:3 (2021),  14–17
  7. Formation of SiC mesastructures with gently sloping sidewalls by dry selective etching through a photoresist mask

    Zhurnal Tekhnicheskoi Fiziki, 90:6 (2020),  997–1000
  8. Photodiodes for detecting the emission of quantum-sized disk lasers operating on whispering gallery modes (2.2 – 2.3 $\mu$m)

    Fizika i Tekhnika Poluprovodnikov, 54:7 (2020),  677–683
  9. Edge-termination technique for high-voltage mesa-structure 4$H$-SiC devices: negative beveling

    Fizika i Tekhnika Poluprovodnikov, 54:2 (2020),  207–211
  10. Micro-profiling of 4$H$-SiC by dry etching to form a Schottky barrier diode

    Fizika i Tekhnika Poluprovodnikov, 54:1 (2020),  97–102
  11. Light–emitting diodes based on asymmetrical double InAs/InAsSb/InAsSbP heterostructure for CO$_{2}$ ($\lambda$ = 4.3 $\mu$m) and CO ($\lambda$ = 4.7 $\mu$m) detection

    Fizika i Tekhnika Poluprovodnikov, 53:6 (2019),  832–838
  12. Development of methods for liquid etching of a separation mesa-structure in creating multijunction solar cells

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:24 (2019),  14–16
  13. Lasing in 9.6-$\mu$m quantum cascade lasers

    Zhurnal Tekhnicheskoi Fiziki, 88:10 (2018),  1559–1563
  14. Influence of the ohmic contact structure on the performance of GaAs/AlGaAs photovoltaic converters

    Zhurnal Tekhnicheskoi Fiziki, 88:8 (2018),  1211–1215
  15. InAsSbP photodiodes for 2.6–2.8-$\mu$m wavelengths

    Zhurnal Tekhnicheskoi Fiziki, 88:2 (2018),  234–237
  16. Ridge waveguide structure for lattice-matched quantum cascade lasers

    Fizika i Tekhnika Poluprovodnikov, 52:12 (2018),  1499–1502
  17. GaSb/GaAlAsSb heterostructure photodiodes for the near-IR spectral range

    Fizika i Tekhnika Poluprovodnikov, 52:9 (2018),  1094–1099
  18. Photoconductivity amplification in a type-II $n$-GaSb/InAs/$p$-GaSb heterostructure with a single QW

    Fizika i Tekhnika Poluprovodnikov, 52:8 (2018),  906–911
  19. On the fabrication and study of lattice-matched heterostructures for quantum cascade lasers

    Fizika i Tekhnika Poluprovodnikov, 52:7 (2018),  812–815
  20. Investigation of the modified structure of a quantum cascade laser

    Fizika i Tekhnika Poluprovodnikov, 52:1 (2018),  133–137
  21. Quantum-cascade lasers generating at the 4.8-$\mu$m wavelength at room temperature

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:18 (2018),  17–23
  22. Mode-locked lasers with “thin” quantum wells in 1.55 $\mu$m spectral range

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:4 (2018),  95–102
  23. Spatial redistribution of radiation in flip-chip photodiodes based on InAsSbP/InAs double heterostructures

    Fizika i Tekhnika Poluprovodnikov, 51:2 (2017),  269–275
  24. Effect of a terahertz cavity on the conductivity of short-period GaAs/AlAs superlattices

    Pis'ma v Zh. Èksper. Teoret. Fiz., 103:2 (2016),  128–131
  25. Switching between the mode-locking and Q-switching modes in two-section QW lasers upon a change in the absorber properties due to the Stark effect

    Fizika i Tekhnika Poluprovodnikov, 50:6 (2016),  843–847
  26. Photodiode 1 $\times$ 64 linear array based on a double $p$-InAsSbP/$n$-InAs$_{0.92}$Sb$_{0.08}$/$n^{+}$-InAs heterostructure

    Fizika i Tekhnika Poluprovodnikov, 50:5 (2016),  657–662
  27. Совершенствование процесса заращивания и получение одномодовых зарощенных InGaAsP/InP-лазеров ($\lambda=1.3$ мкм) с мощностью излучения 160 мВт

    Fizika i Tekhnika Poluprovodnikov, 25:8 (1991),  1414–1418
  28. GROWN SINGLE-MODE CONTINUOUS INGAASP/INP SEPARATE CONFINEMENT LASERS WITH (LAMBDA = 1.3 MU-M)

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 17:6 (1991),  17–21
  29. LOCAL EPITAXY OF SILICON-CARBIDE FROM LIQUID-PHASE

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 17:4 (1991),  77–80
  30. DIAGNOSTICS OF INGAASP/INP HETEROBOUNDARIES BY AUGER SHAPES OF SLANT SECTIONS OBTAINED THROUGH CHEMICAL ETCHING

    Zhurnal Tekhnicheskoi Fiziki, 60:10 (1990),  177–180
  31. INJECTION HETEROLASERS WITH DISTRIBUTED FEEDBACK IN INGAASSB/GASB SYSTEM

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:2 (1990),  58–62
  32. SCHOTTKY BARRIERS AND INGAAS/INP-BASED FIELD TRANSISTORS

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:19 (1988),  1807–1810
  33. HIGH-TEMPERATURE SIC-6H FIELD TRANSISTOR WITH THE P-N LOCKS

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:4 (1988),  289–293
  34. STUDY OF THE DURABILITY OF CONTINUOUS INGAASP/INP (LAMBDA=1.3 MU-M) MS SEPARATE CONFINEMENT LASERS

    Zhurnal Tekhnicheskoi Fiziki, 57:9 (1987),  1822–1824
  35. CURRENT CONTROL BY CROSS-SECTIONS OF THE THICKNESS AND CURRENT DEOXIDATION OF LAYERS OF ALGAAS CULTIVATED IN GROOVES

    Zhurnal Tekhnicheskoi Fiziki, 57:4 (1987),  778–782
  36. Power separate confinement $In\,Ga\,As\,P/In\,P$-based lasers for FOCD ($\lambda=1,55$ mu-m, $T=300$ K, $P=50$ mVt)

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:9 (1987),  535–537
  37. MESA-STRIPE INGAASP/INP(LAMBDA=1.5MKM) LASERS OF CONTINUOUS ACTION

    Zhurnal Tekhnicheskoi Fiziki, 55:9 (1985),  1872–1876
  38. INVESTIGATION OF PIN-PHOTODIODES BASED ON INGAASP/INP

    Zhurnal Tekhnicheskoi Fiziki, 55:8 (1985),  1566–1569
  39. High-power mesastrip PO $In\,Ga\,As/In\,P$ lasers for FOCD ($\lambda=1.3$ mu-m, $t=18^\circ$ C, $i=300$ mA, $p=28$ mVt in the fiber of $50\,\mu m$ diameter

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:22 (1985),  1345–1349
  40. PHOTO-TRANSISTOR BASED ON N-P-N HETEROSTRUCTURES IN THE INP-INGAASP SYSTEM

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 10:21 (1984),  1294–1297
  41. SPONTANEOUS END INGAASP/INP DHS-EMITTERS FOR THE 200 MKM IN DIAMETER FOC (FIBER-OPTICAL COUPLER)

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 10:21 (1984),  1286–1290
  42. LOW-THRESHOLD MEZOBAND INGAASP/INP CONTINUOUS OPERATION LASERS

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 10:16 (1984),  961–964
  43. FACE SPONTANEOUS EMITTERS BASED ON DHS (DOUBLE HETEROSTRUCTURES) INGAASP(GAMMA-CONGRUENT-TO-1,3MKM) WITH ETA-B-CONGRUENT-TO-6-PERCENT AT 300K

    Zhurnal Tekhnicheskoi Fiziki, 53:7 (1983),  1408–1411

© Steklov Math. Inst. of RAS, 2024