Usikova Anna Aleksandrovna

Publications in Math-Net.Ru

1. On the use of indium arsenide as the waveguide material in the measurements by attenuated total reflectance
   
   Optics and Spectroscopy, 129:9 (2021),  1193–1197
2. Examination of the capabilities of metalorganic vapor-phase epitaxy in fabrication of thin InAs/GaSb layers
   
   Zhurnal Tekhnicheskoi Fiziki, 89:10 (2019),  1592–1597
3. Magnetotransport spectroscopy of the interface, quantum well, and hybrid states in structures with 16-nm-thick multiple HgTe layers
   
   Fizika i Tekhnika Poluprovodnikov, 53:7 (2019),  947–952
4. Lasing in 9.6-$\mu$m quantum cascade lasers
   
   Zhurnal Tekhnicheskoi Fiziki, 88:10 (2018),  1559–1563
5. InAsSbP photodiodes for 2.6–2.8-$\mu$m wavelengths
   
   Zhurnal Tekhnicheskoi Fiziki, 88:2 (2018),  234–237
6. Ridge waveguide structure for lattice-matched quantum cascade lasers
   
   Fizika i Tekhnika Poluprovodnikov, 52:12 (2018),  1499–1502
7. Heterostructures of single-wavelength and dual-wavelength quantum-cascade lasers
   
   Fizika i Tekhnika Poluprovodnikov, 52:6 (2018),  597–602
8. Metal-semiconductor nanoheterostructures with an AlGaN quantum well and in-situ formed surface Al nanoislands
   
   Fizika i Tekhnika Poluprovodnikov, 52:5 (2018),  515
9. Investigation of the modified structure of a quantum cascade laser
   
   Fizika i Tekhnika Poluprovodnikov, 52:1 (2018),  133–137
10. Quantum-cascade lasers generating at the 4.8-$\mu$m wavelength at room temperature
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:18 (2018),  17–23
11. Mode-locked lasers with “thin” quantum wells in 1.55 $\mu$m spectral range
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:4 (2018),  95–102
12. Spatial redistribution of radiation in flip-chip photodiodes based on InAsSbP/InAs double heterostructures
    
    Fizika i Tekhnika Poluprovodnikov, 51:2 (2017),  269–275
13. Effect of a terahertz cavity on the conductivity of short-period GaAs/AlAs superlattices
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 103:2 (2016),  128–131
14. On the gain properties of “thin” elastically strained InGaAs/InGaAlAs quantum wells emitting in the near-infrared spectral region near 1550 nm
    
    Fizika i Tekhnika Poluprovodnikov, 50:10 (2016),  1429–1433
15. Switching between the mode-locking and Q-switching modes in two-section QW lasers upon a change in the absorber properties due to the Stark effect
    
    Fizika i Tekhnika Poluprovodnikov, 50:6 (2016),  843–847
16. Photodiode 1 $\times$ 64 linear array based on a double $p$-InAsSbP/$n$-InAs$_{0.92}$Sb$_{0.08}$/$n^{+}$-InAs heterostructure
    
    Fizika i Tekhnika Poluprovodnikov, 50:5 (2016),  657–662