Usikova Anna Aleksandrovna

Publications in Math-Net.Ru

1. Broadband phase modulator based on a multimode channel waveguide in thin-film lithium niobate
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:8 (2025),  25–29
2. Longwave ($\lambda_{0.1}$ = 10 $\mu$m, 296 K) infrared photodetectors based on InAsSb$_{0.38}$ solid solution
   
   Optics and Spectroscopy, 131:11 (2023),  1505–1508
3. On heating mechanisms in LEDs based on $p$-InAsSbP/$n$-InAs(Sb)
   
   Fizika i Tekhnika Poluprovodnikov, 57:1 (2023),  42–52
4. Mode transformation in hybrid waveguides based on lithium niobate for efficient coupling to a standard single mode fiber
   
   Zhurnal Tekhnicheskoi Fiziki, 92:1 (2022),  113–117
5. On-chip ATR sensor ($\lambda$ = 3.4 $\mu$m) based on InAsSbP/InAs double heterostructure for the determination of ethanol concentration in aqueous solutions
   
   Optics and Spectroscopy, 130:8 (2022),  1223–1228
6. On the use of indium arsenide as the waveguide material in the measurements by attenuated total reflectance
   
   Optics and Spectroscopy, 129:9 (2021),  1193–1197
7. Examination of the capabilities of metalorganic vapor-phase epitaxy in fabrication of thin InAs/GaSb layers
   
   Zhurnal Tekhnicheskoi Fiziki, 89:10 (2019),  1592–1597
8. Magnetotransport spectroscopy of the interface, quantum well, and hybrid states in structures with 16-nm-thick multiple HgTe layers
   
   Fizika i Tekhnika Poluprovodnikov, 53:7 (2019),  947–952
9. Lasing in 9.6-$\mu$m quantum cascade lasers
   
   Zhurnal Tekhnicheskoi Fiziki, 88:10 (2018),  1559–1563
10. InAsSbP photodiodes for 2.6–2.8-$\mu$m wavelengths
    
    Zhurnal Tekhnicheskoi Fiziki, 88:2 (2018),  234–237
11. Ridge waveguide structure for lattice-matched quantum cascade lasers
    
    Fizika i Tekhnika Poluprovodnikov, 52:12 (2018),  1499–1502
12. Heterostructures of single-wavelength and dual-wavelength quantum-cascade lasers
    
    Fizika i Tekhnika Poluprovodnikov, 52:6 (2018),  597–602
13. Metal-semiconductor nanoheterostructures with an AlGaN quantum well and in-situ formed surface Al nanoislands
    
    Fizika i Tekhnika Poluprovodnikov, 52:5 (2018),  515
14. Investigation of the modified structure of a quantum cascade laser
    
    Fizika i Tekhnika Poluprovodnikov, 52:1 (2018),  133–137
15. Quantum-cascade lasers generating at the 4.8-$\mu$m wavelength at room temperature
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:18 (2018),  17–23
16. Mode-locked lasers with “thin” quantum wells in 1.55 $\mu$m spectral range
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:4 (2018),  95–102
17. Spatial redistribution of radiation in flip-chip photodiodes based on InAsSbP/InAs double heterostructures
    
    Fizika i Tekhnika Poluprovodnikov, 51:2 (2017),  269–275
18. Effect of a terahertz cavity on the conductivity of short-period GaAs/AlAs superlattices
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 103:2 (2016),  128–131
19. On the gain properties of “thin” elastically strained InGaAs/InGaAlAs quantum wells emitting in the near-infrared spectral region near 1550 nm
    
    Fizika i Tekhnika Poluprovodnikov, 50:10 (2016),  1429–1433
20. Switching between the mode-locking and Q-switching modes in two-section QW lasers upon a change in the absorber properties due to the Stark effect
    
    Fizika i Tekhnika Poluprovodnikov, 50:6 (2016),  843–847
21. Photodiode 1 $\times$ 64 linear array based on a double $p$-InAsSbP/$n$-InAs$_{0.92}$Sb$_{0.08}$/$n^{+}$-InAs heterostructure
    
    Fizika i Tekhnika Poluprovodnikov, 50:5 (2016),  657–662
22. Power increase in Q-switched two-sectional quantum well lasers due to Stark effect
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:20 (2015),  30–36
23. MBE-grown GaAs:Si/GaAs:Be tunnel diodes for multijunction solar cells
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:18 (2015),  82–88