Scheglov Mikhail Petrovich

Publications in Math-Net.Ru

1. Vapor-phase epitaxy of AlN layers on AlN/Si(111) templates synthesized by reactive magnetron sputtering
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:8 (2020),  29–31
2. Thick epitaxial $\alpha$-Ga$_{2}$O$_{3}$ : Sn layers on a patterned sapphire substrate
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:5 (2020),  27–29
3. Electric polarization in ErCrO$_{3}$ induced by restricted polar domains
   
   Fizika Tverdogo Tela, 61:3 (2019),  501–509
4. Electric polarization in YCrO$_{3}$ induced by restricted polar domains of magnetic and structural natures
   
   Fizika Tverdogo Tela, 61:1 (2019),  95–103
5. Synthesis of hexagonal AlN и GaN layers on a Si(100) substrate by chloride vapor-phase epitaxy
   
   Zhurnal Tekhnicheskoi Fiziki, 89:4 (2019),  574–577
6. Investigation of composition uniformity on thickness of GaInAsP layers grown on InP substrates by vapor-phase epitaxy
   
   Fizika i Tekhnika Poluprovodnikov, 53:11 (2019),  1512–1518
7. Properties of semipolar GaN grown on a Si(100) substrate
   
   Fizika i Tekhnika Poluprovodnikov, 53:7 (2019),  1006–1009
8. Thick $\alpha$-Ga$_{2}$O$_{3}$ layers on sapphire substrates grown by halide epitaxy
   
   Fizika i Tekhnika Poluprovodnikov, 53:6 (2019),  789–792
9. Luminescence properties of GaInAsP layers with graded composition–depth profiles grown on InP substrates
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:20 (2019),  22–25
10. Epitaxy of GaN(0001) and GaN(10$\bar1$1) layers on Si(100) substrate
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:11 (2019),  3–5
11. Frozen superparaelectric state of local polar regions in GdMn$_{2}$O$_{5}$ and Gd$_{0.8}$Ce$_{0.2}$Mn$_{2}$O$_{5}$
    
    Fizika Tverdogo Tela, 60:3 (2018),  531–542
12. Change in the character of biaxial stresses with an increase in $x$ from 0 to 0.7 in Al$_{x}$Ga$_{1-x}$N:Si layers obtained by ammonia molecular beam epitaxy
    
    Fizika i Tekhnika Poluprovodnikov, 52:2 (2018),  233–237
13. A study of the composition gradient of GaInAsP layers formed on InP by vapor-phase epitaxy
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:24 (2018),  17–24
14. Reciprocal-space maps of X-ray diffraction intensity distribution and their relation to the dislocation structure of epitaxial layers
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:12 (2018),  96–102
15. Semipolar gan layers grown on nanostructured Si(100) substrate
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:12 (2018),  45–51
16. Hexagonal AlN layers grown on sulfided Si(100) substrate
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:2 (2018),  96–103
17. Room-temperature electric polarization induced by phase separation in multiferroic GdMn$_2$O$_5$
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 103:4 (2016),  274–279
18. MEASURING THE SCATTERING OF X-RAYS UNDER THE MIRROR REFLECTION IN THE DIFFERENTIAL REGIME
    
    Zhurnal Tekhnicheskoi Fiziki, 57:7 (1987),  1436–1438