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Radzhapov Sali Ashirovich

Publications in Math-Net.Ru

  1. Modeling of semiconductor heterostructures for energy converters and sensors

    Vestnik SamU. Estestvenno-Nauchnaya Ser., 30:1 (2024),  64–81
  2. Efficiency of activated nano-heterojunctions on silicon and silicon carbide substrates

    Comp. nanotechnol., 10:4 (2023),  91–102
  3. Scaling models of electrical properties of photo- and beta-converters with nano-heterojunctions

    Comp. nanotechnol., 10:1 (2023),  138–146
  4. Efficiency determination problems for SiC*/Si microstructures and contact formation

    Comp. nanotechnol., 8:3 (2021),  59–68
  5. Calculation of stages of the technological process of manufacture of PPD detectors using computer mathematical modeling and production of alpha radiometer on their basis

    Comp. nanotechnol., 7:2 (2020),  21–28
  6. Development of silicon diffusion $n - p$-detectors of ionizing radiation

    Comp. nanotechnol., 6:3 (2019),  112–115
  7. Silicon-lithium $\Delta E$-detectors of alpha-radiation to the radiometer

    Comp. nanotechnol., 6:2 (2019),  157–159
  8. Development of radometer based on silicon detectors with a big sensitive area

    Comp. nanotechnol., 6:1 (2019),  65–68
  9. Semiconductor nuclear radiation detectors on the basis of heterojunction structures of Al-$\alpha$Ge-pSi-Au for measurement of low intensive ionizing radiations

    Comp. nanotechnol., 2018, no. 3,  65–67
  10. Features of the development of manufacturing technology for surface-barrier detectors of large diameter with a large working area sensitive for measuring the activity of natural isotopes

    Comp. nanotechnol., 2018, no. 1,  151–154
  11. Coordinate-sensitive detectors of ionizing radiation on the basis of the Si (Li) $p-i-n$ large-dimension structures

    Comp. nanotechnol., 2017, no. 3,  29–32
  12. Detectors of X-ray and gamma radiation on the basis of Al-nGe-pSi-Au structure

    Comp. nanotechnol., 2017, no. 3,  27–28
  13. The use of ergonometry based on silicon surface barrier detectors to monitor radon

    Comp. nanotechnol., 2017, no. 2,  85–88
  14. Examination and assessment of electrophysical and radiometric characteristics of the Si(Li)p-i-n-photodetecting plasticscintillation system

    Comp. nanotechnol., 2017, no. 1,  54–55
  15. The ionizing radiation detectors based on neutron-doped silicon

    Comp. nanotechnol., 2016, no. 4,  136–137
  16. Technological formation of large-size Si(Li) p-i-n radiation detectors

    Comp. nanotechnol., 2016, no. 1,  62–66

  17. Development of silicon detectors and electronic units for radiometer alpha-, beta and gamma-radiation

    Comp. nanotechnol., 9:3 (2022),  45–52


© Steklov Math. Inst. of RAS, 2024