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Publications in Math-Net.Ru
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Modeling of semiconductor heterostructures for energy converters and sensors
Vestnik SamU. Estestvenno-Nauchnaya Ser., 30:1 (2024), 64–81
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Efficiency of activated nano-heterojunctions on silicon and silicon carbide substrates
Comp. nanotechnol., 10:4 (2023), 91–102
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Scaling models of electrical properties of photo- and beta-converters with nano-heterojunctions
Comp. nanotechnol., 10:1 (2023), 138–146
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Efficiency determination problems for SiC*/Si microstructures and contact formation
Comp. nanotechnol., 8:3 (2021), 59–68
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Calculation of stages of the technological process of manufacture of PPD detectors using computer mathematical modeling and production of alpha radiometer on their basis
Comp. nanotechnol., 7:2 (2020), 21–28
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Development of silicon diffusion $n - p$-detectors of ionizing radiation
Comp. nanotechnol., 6:3 (2019), 112–115
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Silicon-lithium $\Delta E$-detectors of alpha-radiation to the radiometer
Comp. nanotechnol., 6:2 (2019), 157–159
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Development of radometer based on silicon detectors with a big sensitive area
Comp. nanotechnol., 6:1 (2019), 65–68
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Semiconductor nuclear radiation detectors on the basis of heterojunction structures of Al-$\alpha$Ge-pSi-Au for measurement of low intensive ionizing radiations
Comp. nanotechnol., 2018, no. 3, 65–67
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Features of the development of manufacturing technology for surface-barrier detectors of large diameter with a large working area sensitive for measuring the activity of natural isotopes
Comp. nanotechnol., 2018, no. 1, 151–154
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Coordinate-sensitive detectors of ionizing radiation on the basis of the Si (Li) $p-i-n$ large-dimension structures
Comp. nanotechnol., 2017, no. 3, 29–32
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Detectors of X-ray and gamma radiation on the basis of Al-nGe-pSi-Au structure
Comp. nanotechnol., 2017, no. 3, 27–28
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The use of ergonometry based on silicon surface barrier detectors to monitor radon
Comp. nanotechnol., 2017, no. 2, 85–88
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Examination and assessment of electrophysical and radiometric characteristics of the Si(Li)p-i-n-photodetecting plasticscintillation system
Comp. nanotechnol., 2017, no. 1, 54–55
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The ionizing radiation detectors based on neutron-doped silicon
Comp. nanotechnol., 2016, no. 4, 136–137
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Technological formation of large-size Si(Li) p-i-n radiation detectors
Comp. nanotechnol., 2016, no. 1, 62–66
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Development of silicon detectors and electronic units for radiometer alpha-, beta and gamma-radiation
Comp. nanotechnol., 9:3 (2022), 45–52
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