Rozhkov Aleksandr Vladimirovich

Publications in Math-Net.Ru

1. Metal–insulator transition and other electronic properties of AB-stacked bilayer graphene deposited on a ferromagnetic substrate
   
   Pis'ma v Zh. Èksper. Teoret. Fiz., 118:9 (2023),  689–696
2. Charge distribution and spin textures in magic-angle twisted bilayer graphene
   
   Pis'ma v Zh. Èksper. Teoret. Fiz., 116:10 (2022),  708–715
3. Magnetoelectronic instability of graphene on a ferromagnetic substrate
   
   Pis'ma v Zh. Èksper. Teoret. Fiz., 114:12 (2021),  824–832
4. New half-metallic states in systems with spin and charge density waves (brief review)
   
   Pis'ma v Zh. Èksper. Teoret. Fiz., 112:11 (2020),  764–773
5. Phase separation in a spin density wave state of twisted bilayer graphene
   
   Pis'ma v Zh. Èksper. Teoret. Fiz., 112:10 (2020),  693–699
6. Inhomogeneous electron states in the systems with imperfect nesting
   
   Pis'ma v Zh. Èksper. Teoret. Fiz., 105:12 (2017),  768–779
7. Динамические характеристики мощных импульсных GaAs/AlGaAs-суперлюминесцентных светодиодов
   
   Fizika i Tekhnika Poluprovodnikov, 26:4 (1992),  719–724
8. STUDY OF THE SWITCHING STABILITY OF HIGH-VOLTAGE SUBNANOSECOND PHOTON-INJECTION SWITCHES
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 18:10 (1992),  26–31
9. CURRENT SHUTOFF OF THE CONTROL OF PHOTON-INJECTION PULSE THYRISTORS BASED ON HETEROSTRUCTURE
   
   Zhurnal Tekhnicheskoi Fiziki, 59:2 (1989),  156–158
10. Расчет основных характеристик фотонно-инжекционного импульсного тиристора на основе гетероструктуры
    
    Fizika i Tekhnika Poluprovodnikov, 22:3 (1988),  413–418
11. HIGH-VOLTAGE IMPULSE THYRISTORS ON THE BASIS OF WEAKLY ALLOYED ARSENIDE-GALLIUM
    
    Zhurnal Tekhnicheskoi Fiziki, 57:4 (1987),  771–777
12. Study of P-N-structures and P-N-P-N-structures based on nonalloyed gallium-phosphide layers
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:20 (1987),  1270–1274
13. On the Determination of Excess Charge Carrier Lifetime in Lightly Doped $p-$ and $n$-Regions of Photon-Injection Transistors and Thyristors
    
    Fizika i Tekhnika Poluprovodnikov, 20:10 (1986),  1897–1900
14. Transients Processes in High-Voltage Photon-Injection Transistors Based on Heterostructure
    
    Fizika i Tekhnika Poluprovodnikov, 20:4 (1986),  677–682
15. Electrically controlled trielectrode high-voltage switches of the subnanosecond range based on the $Ga\,As-Al\,Ga\,As$ multilayered heterostructure
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:21 (1986),  1281–1285
16. High-Voltage Photon-Injection Transistor Based on a Heterostructure
    
    Fizika i Tekhnika Poluprovodnikov, 19:5 (1985),  878–884
17. ARSENIDEGALLIUM FIELD-EFFECT TRANSISTORS WITH CONTROLLING P-N TRANSIENTS
    
    Zhurnal Tekhnicheskoi Fiziki, 54:4 (1984),  859–862
18. POWERFUL IMPULSE TRANSISTORS BASED ON GALLIUM ARSENIDES
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 10:16 (1984),  976–979
19. ARSENIDE-GALLIUM TRANSISTORS
    
    Zhurnal Tekhnicheskoi Fiziki, 53:4 (1983),  763–765
20. Исследование транзисторов с оптической связью
    
    Fizika i Tekhnika Poluprovodnikov, 17:9 (1983),  1618–1622
21. Импульсные тиристоры на основе гетероструктур GaAs$-$AlGaAs
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 9:11 (1983),  652–655