Slobodchikov Semen Vavilovich

Publications in Math-Net.Ru

1. Электрические и фотоэлектрические свойства диодных структур Pd${-}p{-}p^{+}$-InP и изменение их в атмосфере водорода
   
   Fizika i Tekhnika Poluprovodnikov, 26:10 (1992),  1750–1754
2. Электрические и фотоэлектрические свойства гетероструктур, полученных структурным переходом Au$-p$-InP$\to$Au$-n$-In$_{2}$O$_{3}{-}p$-InP
   
   Fizika i Tekhnika Poluprovodnikov, 26:9 (1992),  1590–1595
3. MECHANISMS OF HYDROGEN EFFECT ON ELECTRIC AND PHOTOELECTRIC PROPERTIES OF PD-P(N)-INP AND PD-N-GAP DIODE STRUCTURES
   
   Zhurnal Tekhnicheskoi Fiziki, 61:9 (1991),  173–176
4. Произведение $R_{0}A$ в InAs $p{-}n$-переходах
   
   Fizika i Tekhnika Poluprovodnikov, 25:10 (1991),  1686–1690
5. Токи двойной инжекции и фототок в диодных структурах Pd${-}p{-}p^{+}{-}$InP
   
   Fizika i Tekhnika Poluprovodnikov, 25:8 (1991),  1466–1468
6. Фотодетектор на основе InGaAs как детектор водорода
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 17:15 (1991),  1–4
7. PHOTOGRAPHIC EMF OF PD-PARA-INP STRUCTURES WITH INTERMEDIATE LAYERS IN HYDROGEN OR WATER-VAPOR ATMOSPHERE
   
   Zhurnal Tekhnicheskoi Fiziki, 59:11 (1989),  155–158
8. Влияние облучения электронами на свойства фосфида индия, легированного $3d$-элементами
   
   Fizika i Tekhnika Poluprovodnikov, 23:5 (1989),  921–924
9. PD-INTERMEDIATE LAYER-INP PHOTODETECTOR AS HYDROGEN DETECTOR
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 15:12 (1989),  55–58
10. Поверхностно-барьерные структуры Au${-}p$-InAs$_{1-x-y}$Sb$_{x}$P$_{y}$
    
    Fizika i Tekhnika Poluprovodnikov, 22:8 (1988),  1528–1529
11. О механизмах рекомбинации носителей тока в $p$-InAs$_{1-x-y}$Sb$_{x}$P$_{y}$
    
    Fizika i Tekhnika Poluprovodnikov, 22:5 (1988),  789–792
12. LONGITUDINAL PHOTOEFFECT BASED ON INNER PHOTOEMISSION
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:21 (1988),  1982–1985
13. On the Electrophysical and Photoelectrical Properties of InAs$_{1-x-y}$Sb$_{x}$P$_{y}$Based Eреtaxial Diode Structures
    
    Fizika i Tekhnika Poluprovodnikov, 20:12 (1986),  2195–2198
14. Spectral Photosensitivity of Au${-}p$-InAs Schottky Diodes
    
    Fizika i Tekhnika Poluprovodnikov, 20:5 (1986),  903–905
15. On the Lifetimes of Charge Carriers in Zn- and Mn-Doped In$_{1-x}$Ga$_{x}$As Solid Solutions
    
    Fizika i Tekhnika Poluprovodnikov, 20:3 (1986),  537–538
16. On the Recombination Mechanisms in Indium-Arsenide Crystals
    
    Fizika i Tekhnika Poluprovodnikov, 20:3 (1986),  403–406
17. Effect of a Magnetic Field on Photoeffect of Schottky Diodes Based on $p$-Type InAs
    
    Fizika i Tekhnika Poluprovodnikov, 19:6 (1985),  1119–1122
18. Schottky Diodes Based on Compensated $p$-Type InP
    
    Fizika i Tekhnika Poluprovodnikov, 18:4 (1984),  600–603
19. Collision-Ionization Coefficients of Electrons and Holes in Narrow-B and Solid Solutions Based on InAs
    
    Fizika i Tekhnika Poluprovodnikov, 18:3 (1984),  545–547
20. Продольный фотоэффект в диодах Шоттки Au/$n$-InP с промежуточным слоем
    
    Fizika i Tekhnika Poluprovodnikov, 17:11 (1983),  2084–2086
21. Усиление фототока в диодных структурах Au/$n$-InP$\langle\text{Fe}\rangle$
    
    Fizika i Tekhnika Poluprovodnikov, 17:11 (1983),  1991–1994
22. Photoelectric properties of $p$-$\mathrm{ZnSiAs}_2$ and $p$-$\mathrm{CdGeAs}_2$ crystals
    
    Dokl. Akad. Nauk SSSR, 161:5 (1965),  1065–1066