Pavlov Pavel Vasil'evich

Publications in Math-Net.Ru

1. RESISTOMETRIC STUDY METHOD OF KINETICS OF ION-IMPLANTATION PROCESSES
   
   Zhurnal Tekhnicheskoi Fiziki, 54:11 (1984),  2263–2266
2. Investigation of the ion bombardment influence upon the structure of $\mathrm{SiO}_2$ amorphous films
   
   Dokl. Akad. Nauk SSSR, 258:3 (1981),  617–619
3. The short-range order in $\mathrm{InSb}$, arriorphized by the ion bombardment
   
   Dokl. Akad. Nauk SSSR, 248:6 (1979),  1335–1337
4. Morphological and structural changes of $\mathrm{InSb}$ at ion bombardment
   
   Dokl. Akad. Nauk SSSR, 248:5 (1979),  1111–1114
5. The mechanism of $\alpha$-, $\beta$-transition of $\mathrm{Si}_3\mathrm{N}_4$ during the annealing
   
   Dokl. Akad. Nauk SSSR, 241:4 (1978),  825–827
6. Effect of excess silicon on the formation of $\alpha$-$\mathrm{Si}_3\mathrm{N}_4$ in the ionic implantation of nitrogen
   
   Dokl. Akad. Nauk SSSR, 240:5 (1978),  1108–1110
7. Structural transformations during the bombardment of iron, nickel, and molybdenum with $\mathrm{Ar}^+$, $\mathrm{N}^+$ and $\mathrm{C}^+$ ions
   
   Dokl. Akad. Nauk SSSR, 217:2 (1974),  330–332
8. Structure of the short-range order of amorfous germanium obtained by ionic bombardment
   
   Dokl. Akad. Nauk SSSR, 208:2 (1973),  350–352
9. Crystallization of amorphous silicon dioxide films during ion bombardment and subsequent annealing
   
   Dokl. Akad. Nauk SSSR, 192:3 (1970),  559–561
10. Relationship between the amorphization and the point defect formation during ionic bombardment of germanium and silicon
    
    Dokl. Akad. Nauk SSSR, 192:2 (1970),  324–326
11. Structure of amorphous germanium obtained from crystalline germanium by bombardment with argon ions
    
    Dokl. Akad. Nauk SSSR, 175:4 (1967),  823–825
12. The structure of the oxide films obtained by bombarding the surface of silicon with oxygen ions
    
    Dokl. Akad. Nauk SSSR, 172:3 (1967),  588–590