Tetelbaum David Isaakovich

Publications in Math-Net.Ru

1. Experimental observation of $s$-component of superconducting pairing in thin disordered HTSC films based on YBCO
   
   Fizika Tverdogo Tela, 62:9 (2020),  1434–1439
2. Electrophysical characteristics of multilayer memristive nanostructures based on yttria-stabilized zirconia and tantalum oxide
   
   Zhurnal Tekhnicheskoi Fiziki, 90:2 (2020),  298–304
3. Calculating silicon-amorphization doses under medium-energy light-ion irradiation
   
   Fizika i Tekhnika Poluprovodnikov, 54:8 (2020),  771–777
4. Impact of oxygen vacancies on the formation and structure of filaments in SiO$_2$-based memristors
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:1 (2020),  24–27
5. Phase diagrams of thin disordered films based on HTSC YBa$_{2}$Cu$_{3}$O$_{7-x}$ in external magnetic fields
   
   Fizika Tverdogo Tela, 61:9 (2019),  1573–1578
6. Role of the solid–aqueous medium interface in transferring light-induced excitation of silicon
   
   Zhurnal Tekhnicheskoi Fiziki, 89:9 (2019),  1427–1433
7. Diffusion and interaction of In and As implanted into SiO$_2$ films
   
   Fizika i Tekhnika Poluprovodnikov, 53:8 (2019),  1023–1029
8. The effect of irradiation with Si$^{+}$ ions on the resistive switching of memristive structures based on yttria stabilized zirconia
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:14 (2019),  3–6
9. Behavioral features of MIS memristors with a Si$_{3}$N$_{4}$ nanolayer fabricated on a conductive Si substrate
   
   Fizika i Tekhnika Poluprovodnikov, 52:12 (2018),  1436–1442
10. Calculation of the influence of the ion current density and temperature on the accumulation kinetics of point defects under the irradiation of Si with light ions
    
    Fizika i Tekhnika Poluprovodnikov, 52:9 (2018),  967–972
11. Effect of boron impurity on the light-emitting properties of dislocation structures formed in silicon by Si$^{+}$ ion implantation
    
    Fizika i Tekhnika Poluprovodnikov, 52:7 (2018),  702–707
12. Formation of hexagonal 9$R$ silicon polytype by ion implantation
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:16 (2017),  87–92
13. Change of immitance during electroforming and resistive switching in the metal-insulator-metal memristive structures based on SiO$_{x}$
    
    Zhurnal Tekhnicheskoi Fiziki, 86:5 (2016),  107–111
14. Layer-by-layer composition and structure of silicon subjected to combined gallium and nitrogen ion implantation for the ion synthesis of gallium nitride
    
    Fizika i Tekhnika Poluprovodnikov, 50:2 (2016),  274–278
15. Si:Si LEDs with room-temperature dislocation-related luminescence
    
    Fizika i Tekhnika Poluprovodnikov, 50:2 (2016),  241–244
16. Resistive switching in Au/SiO$_{x}$/TiN/Ti memristive structures with varied geometric parameters and stoichiometry of dielectric film
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:10 (2016),  17–24
17. Об аномальной дозовой зависимости концентрации $VV$-центров в кремнии при ионной имплантации азота
    
    Fizika i Tekhnika Poluprovodnikov, 26:8 (1992),  1514–1516
18. On the mechanism of property modification in metals with strong structural imperfections at low ion irradiation doses
    
    Dokl. Akad. Nauk SSSR, 311:3 (1990),  606–608
19. Немонотонный характер дозовой зависимости электрических свойств и химической стойкости азотированного ионной имплантацией кремния
    
    Fizika i Tekhnika Poluprovodnikov, 23:12 (1989),  2149–2152
20. INFLUENCE OF EXTENDED DEFECTS IN ORIGINAL CRYSTALS ON THE REMOTE-CONTROL EFFECT UNDER IONIC IMPLANTATION
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 15:22 (1989),  44–47
21. INTENSIFICATION OF ELASTIC-WAVES GENERATED BY ION BOMBARDING DURING DISTRIBUTION IN CRYSTALS WITH CLUSTER DEFECTS
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:3 (1988),  273–276
22. On the Effect of Elastic Stresses on the Transformation of Defect Accumulations in Semiconductors
    
    Fizika i Tekhnika Poluprovodnikov, 21:8 (1987),  1495–1497
23. Effect of Long-Distant Action under Ionic Irradiation of «Oxygenless» Silicon
    
    Fizika i Tekhnika Poluprovodnikov, 21:5 (1987),  904–910
24. Effect of Elastic Waves Arising under Ionic Bombardment on Structure Perfection of Semiconductor Crystals
    
    Fizika i Tekhnika Poluprovodnikov, 20:3 (1986),  503–507
25. Pressure effect on recrystallization rate of amorphous silicon layer at postimplantation annealing
    
    Fizika Tverdogo Tela, 27:1 (1985),  274–277
26. Defect Formation in Silicon under Ion Bombardment beyond the Limits of Ion-Parth Range
    
    Fizika i Tekhnika Poluprovodnikov, 19:3 (1985),  464–468
27. Связь аморфизуемости алмазоподобных полупроводников с их механическими свойствами
    
    Fizika i Tekhnika Poluprovodnikov, 17:6 (1983),  1045–1048
28. Глубокое проникновение радиационных дефектов из ионно-имплантированного слоя в объем полупроводника
    
    Fizika i Tekhnika Poluprovodnikov, 17:5 (1983),  838–842
29. The short-range order in $\mathrm{InSb}$, arriorphized by the ion bombardment
    
    Dokl. Akad. Nauk SSSR, 248:6 (1979),  1335–1337
30. Structural transformations during the bombardment of iron, nickel, and molybdenum with $\mathrm{Ar}^+$, $\mathrm{N}^+$ and $\mathrm{C}^+$ ions
    
    Dokl. Akad. Nauk SSSR, 217:2 (1974),  330–332
31. Relationship between the amorphization and the point defect formation during ionic bombardment of germanium and silicon
    
    Dokl. Akad. Nauk SSSR, 192:2 (1970),  324–326
32. Structure of amorphous germanium obtained from crystalline germanium by bombardment with argon ions
    
    Dokl. Akad. Nauk SSSR, 175:4 (1967),  823–825