Birth date:
14.08.1960
Website: https://www.npi-tu.ru Keywords: thermomigration,
normal and tangential gradients,
modeling,
security ring.
Subject:
Application of the thermal migration method for creation of solid-state electronics devices
Main publications:
V.V. Kuznetsov, V.N. Lozovskii, V.P. Popov, E.R. Rubtsov, B.M. Seredin, “Kinetics in the Si–Al–Ga and Si–Al–Sn Systems”, Inorganic Materials, 54:1 (2018), 32-36
Knyazev, S.Y., Lozovskii, V.N., Lozovskii, B.M. Seredin, “Manifestations of induced instability of phase boundaries during thermomigration”, Tech. Phys. Lett., 42:10 (2016), 1045-1048
Lozovskiy, V.N., Seredin, B.M., Arkhipova, N.Yu., “Local Doping of Semiconductor Crystals by Thermomigration”, Materials Engineering and Technologies for Production and Processing, Materials Science Forum, 843, 2016, 46-52
Sysoev I.A., Lunina M.L., Alfimova D.L., Blagin A.V., Gusev D.A., Seredin B.M., “Growth of GaxIn1-x AsyP1-y /GaAs Quantum dot arrays by ion beam deposition”, Inorganic Materials, 50:3 (2014), 215-221
