|
|
Publications in Math-Net.Ru
-
Высокотемпературная ионная имплантация мышьяка в кремний
Fizika i Tekhnika Poluprovodnikov, 24:6 (1990), 1132–1133
-
SYNTHESIS OF SI3N4 AMORPHOUS FILMS DURING NITROGEN ION-IMPLANTATION TO
SILICON
Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:23 (1990), 43–45
-
Исследование распределения аморфной и кристаллической фазы
ионно-синтезированного SiC в Si
Fizika i Tekhnika Poluprovodnikov, 22:4 (1988), 731–732
-
Electric Properties of $p{-}n{-}n^{+}$ Structure in Silicon Carbide Produced by Ionic Doping of Aluminum
Fizika i Tekhnika Poluprovodnikov, 21:9 (1987), 1685–1689
-
Study of the Formation of $\beta$-SiC Monocrystalline Layers on Si by the Method of Highly Intense Ionic Doping
Fizika i Tekhnika Poluprovodnikov, 21:5 (1987), 920–922
-
Synthesis of Monocrystalline Silicon Carbide by Single-Step Equipment of Highly Intense Ion Doping
Fizika i Tekhnika Poluprovodnikov, 20:1 (1986), 149–152
-
Vibration structure of $D_{1}$-spectra in cubic $\mathrm{SiC}$
Fizika Tverdogo Tela, 27:10 (1985), 3170–3172
-
$\mathrm{SiC}$ layer structure reduction after ion implantation
Fizika Tverdogo Tela, 26:5 (1984), 1575–1577
-
Cathodoluminescence of SiC Ion-Doped by Aland Ar
Fizika i Tekhnika Poluprovodnikov, 18:4 (1984), 700–703
-
The effect of channelling on the distribution of electrically active boron and phosphorus atoms intruded into silicon single crystals
Dokl. Akad. Nauk SSSR, 197:2 (1971), 319–322
© , 2024