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Gukasyan M A
Publications in Math-Net.Ru
Inhomogeneities in compensated silicon by laser scanning method
Proceedings of the YSU, Physical and Mathematical Sciences
, 1986, no. 1,
87–90
Electron- hole transition in diamond obtained by means of boron and phosphorus ion incorporation
Dokl. Akad. Nauk SSSR
,
200
:4 (1971),
821–824
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Steklov Math. Inst. of RAS
, 2024