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Bugrov Vladislav Evgen'evich

Publications in Math-Net.Ru

  1. High-speed vertically emitting lasers in the spectral range of 1550 nm, implemented in the framework of wafer sintering method

    Kvantovaya Elektronika, 52:10 (2022),  878–884
  2. Misfit stress relaxation in $\alpha$-Ga$_{2}$O$_{3}$/$\alpha$-Al$_{2}$O$_{3}$ heterostructures via formation of misfit dislocations

    Fizika Tverdogo Tela, 63:6 (2021),  788–795
  3. Study of charge carrier traps in bulk crystal gallium oxide $\beta$-Ga$_{2}$O$_{3}$

    Fizika Tverdogo Tela, 63:4 (2021),  421–426
  4. Investigation of the characteristics of the InGaAs/InAlGaAs superlattice for 1300 nm range vertical-cavity surface emitting lasers

    Zhurnal Tekhnicheskoi Fiziki, 91:12 (2021),  2008–2017
  5. Mushroom mesa structure for InAlAs/InGaAs avalanche photodiodes

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:21 (2021),  36–38
  6. Elemental and structural mapping of Czochralski-grown bulk (Al$_{x}$Ga$_{1-x}$)$_{2}$O$_{3}$, crystals

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:5 (2021),  19–22
  7. Volume gallium oxide crystals grown from melt by the Czochralski method in an oxygen-containing atmosphere

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:22 (2020),  43–45
  8. The influence of the parameters of a short-period InGaAs/InGaAlAs superlattice on photoluminescence efficiency

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:22 (2020),  27–30
  9. Optical gain in laser heterostructures with an active area based on an InGaAs/InGaAlAs superlattice

    Optics and Spectroscopy, 127:6 (2019),  963–966
  10. High-power quantum-cascade lasers emitting in the 8-$\mu$m wavelength range

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:14 (2019),  48–51
  11. Room temperature lasing of single-mode arched-cavity quantum-cascade lasers

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:8 (2019),  31–33
  12. Room temperature lasing of multi-stage quantum-cascade lasers at 8 $\mu$m wavelength

    Fizika i Tekhnika Poluprovodnikov, 52:8 (2018),  954–957
  13. Intraband radiation absorption by holes in InAsSb/AlSb and InGaAsP/InP quantum wells

    Fizika i Tekhnika Poluprovodnikov, 52:2 (2018),  207–220
  14. Mode-locked lasers with “thin” quantum wells in 1.55 $\mu$m spectral range

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:4 (2018),  95–102
  15. Generation of the second harmonic in ridge waveguides formed in periodically poled lithium niobate

    Kvantovaya Elektronika, 48:8 (2018),  717–719
  16. Electroluminescence of InAs/InAs(Sb)/InAsSbP LED heterostructures in the temperature range 4.2–300 K

    Fizika i Tekhnika Poluprovodnikov, 51:2 (2017),  247–252
  17. Heterostructures for quantum-cascade lasers of the wavelength range of 7–8 $\mu$m

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:14 (2017),  64–71
  18. On the gain properties of “thin” elastically strained InGaAs/InGaAlAs quantum wells emitting in the near-infrared spectral region near 1550 nm

    Fizika i Tekhnika Poluprovodnikov, 50:10 (2016),  1429–1433
  19. Chloride epitaxy of $\beta$-Ga$_{2}$O$_{3}$ layers grown on $c$-sapphire substrates

    Fizika i Tekhnika Poluprovodnikov, 50:7 (2016),  997–1000
  20. Optical properties of metamorphic GaAs/InAlGaAs/InGaAs heterostructures with InAs/InGaAs quantum wells, emitting light in the 1250–1400-nm spectral range

    Fizika i Tekhnika Poluprovodnikov, 50:5 (2016),  624–627
  21. On a reduction in cracking upon the growth of AlN on Si substrates by hydride vapor-phase epitaxy

    Fizika i Tekhnika Poluprovodnikov, 50:4 (2016),  549–552


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