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Publications in Math-Net.Ru
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High-speed vertically emitting lasers in the spectral range of 1550 nm, implemented in the framework of wafer sintering method
Kvantovaya Elektronika, 52:10 (2022), 878–884
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Misfit stress relaxation in $\alpha$-Ga$_{2}$O$_{3}$/$\alpha$-Al$_{2}$O$_{3}$ heterostructures via formation of misfit dislocations
Fizika Tverdogo Tela, 63:6 (2021), 788–795
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Study of charge carrier traps in bulk crystal gallium oxide $\beta$-Ga$_{2}$O$_{3}$
Fizika Tverdogo Tela, 63:4 (2021), 421–426
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Investigation of the characteristics of the InGaAs/InAlGaAs superlattice for 1300 nm range vertical-cavity surface emitting lasers
Zhurnal Tekhnicheskoi Fiziki, 91:12 (2021), 2008–2017
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Mushroom mesa structure for InAlAs/InGaAs avalanche photodiodes
Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:21 (2021), 36–38
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Elemental and structural mapping of Czochralski-grown bulk (Al$_{x}$Ga$_{1-x}$)$_{2}$O$_{3}$, crystals
Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:5 (2021), 19–22
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Volume gallium oxide crystals grown from melt by the Czochralski method in an oxygen-containing atmosphere
Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:22 (2020), 43–45
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The influence of the parameters of a short-period InGaAs/InGaAlAs superlattice on photoluminescence efficiency
Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:22 (2020), 27–30
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Optical gain in laser heterostructures with an active area based on an InGaAs/InGaAlAs superlattice
Optics and Spectroscopy, 127:6 (2019), 963–966
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High-power quantum-cascade lasers emitting in the 8-$\mu$m wavelength range
Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:14 (2019), 48–51
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Room temperature lasing of single-mode arched-cavity quantum-cascade lasers
Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:8 (2019), 31–33
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Room temperature lasing of multi-stage quantum-cascade lasers at 8 $\mu$m wavelength
Fizika i Tekhnika Poluprovodnikov, 52:8 (2018), 954–957
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Intraband radiation absorption by holes in InAsSb/AlSb and InGaAsP/InP quantum wells
Fizika i Tekhnika Poluprovodnikov, 52:2 (2018), 207–220
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Mode-locked lasers with “thin” quantum wells in 1.55 $\mu$m spectral range
Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:4 (2018), 95–102
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Generation of the second harmonic in ridge waveguides formed in periodically poled lithium niobate
Kvantovaya Elektronika, 48:8 (2018), 717–719
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Electroluminescence of InAs/InAs(Sb)/InAsSbP LED heterostructures in the temperature range 4.2–300 K
Fizika i Tekhnika Poluprovodnikov, 51:2 (2017), 247–252
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Heterostructures for quantum-cascade lasers of the wavelength range of 7–8 $\mu$m
Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:14 (2017), 64–71
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On the gain properties of “thin” elastically strained InGaAs/InGaAlAs quantum wells emitting in the near-infrared spectral region near 1550 nm
Fizika i Tekhnika Poluprovodnikov, 50:10 (2016), 1429–1433
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Chloride epitaxy of $\beta$-Ga$_{2}$O$_{3}$ layers grown on $c$-sapphire substrates
Fizika i Tekhnika Poluprovodnikov, 50:7 (2016), 997–1000
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Optical properties of metamorphic GaAs/InAlGaAs/InGaAs heterostructures with InAs/InGaAs quantum wells, emitting light in the 1250–1400-nm spectral range
Fizika i Tekhnika Poluprovodnikov, 50:5 (2016), 624–627
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On a reduction in cracking upon the growth of AlN on Si substrates by hydride vapor-phase epitaxy
Fizika i Tekhnika Poluprovodnikov, 50:4 (2016), 549–552
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