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Lebedev Alexander Alexandrovich

Publications in Math-Net.Ru

  1. Effect of pretreatment of the silicon substrate on the properties of GaN films grown by chloride–hydride vapor-phase epitaxy

    Fizika i Tekhnika Poluprovodnikov, 55:8 (2021),  704–710
  2. Charge transfer in the vertical structures formed by two-dimensional layers

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:20 (2021),  16–18
  3. Formation of iron silicides under graphene grown on the silicon carbide surface

    Fizika Tverdogo Tela, 62:10 (2020),  1726–1730
  4. Intercalation synthesis of cobalt silicides under graphene grown on silicon carbide

    Fizika Tverdogo Tela, 62:3 (2020),  462–471
  5. Biplanar epitaxial AlN/SiC/$(n,p)$SiC structures for high-temperature functional electronic devices

    Zhurnal Tekhnicheskoi Fiziki, 90:3 (2020),  450–455
  6. Development of the processing technique and study of microwave switches based on 4$H$-SiC $p$–$i$–$n$ diodes

    Zhurnal Tekhnicheskoi Fiziki, 90:2 (2020),  264–267
  7. Raman studies of graphene films grown on 4$H$-SiC subjected to deposition of Ni

    Fizika i Tekhnika Poluprovodnikov, 54:12 (2020),  1388
  8. Characteristics of Schottky rectifier diodes based on silicon carbide at elevated temperatures

    Fizika i Tekhnika Poluprovodnikov, 54:12 (2020),  1364–1367
  9. Model estimates of the quantum capacitance of graphene-like nanostructures

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:23 (2020),  19–21
  10. Terahertz near-field response in graphene ribbons

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:15 (2020),  29–32
  11. Model estimates of the quantum capacitance of graphene nanostructures

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:15 (2020),  7–9
  12. Studying the sensitivity of graphene for biosensor applications

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:10 (2020),  3–6
  13. Influence of the proton irradiation temperature on the characteristics of high-power high-voltage silicon carbide Schottky diodes

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:6 (2020),  35–37
  14. Electron diffraction study of epitaxial graphene formed by thermal destruction of SiC(0001) in an Ar environment and in high vacuum

    Fizika Tverdogo Tela, 61:10 (2019),  1978–1984
  15. Cobalt intercalation of graphene on silicon carbide

    Fizika Tverdogo Tela, 61:7 (2019),  1374–1384
  16. Investigation of the hydrogen etching effect of the SiC surface on the formation of graphene films

    Zhurnal Tekhnicheskoi Fiziki, 89:12 (2019),  1940–1946
  17. Effect of irradiation with 15-MeV protons on low frequency noise in power SiC MOSFETs

    Fizika i Tekhnika Poluprovodnikov, 53:12 (2019),  1604–1608
  18. Impact of high energy elctron irradiation on surge currents in 4$H$-SiC JBS Schottky diodes

    Fizika i Tekhnika Poluprovodnikov, 53:10 (2019),  1448–1452
  19. Low-temperature annealing of lightly doped $n$-4$H$-SiC layers after irradiation with fast electrons

    Fizika i Tekhnika Poluprovodnikov, 53:7 (2019),  991–994
  20. Coulomb electron interaction between an adsorbate and substrate: a model of a surface dimer

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:18 (2019),  21–23
  21. A study of the influence exerted by structural defects on photoluminescence spectra in $n$-3$C$-SiC

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:11 (2019),  28–30
  22. A model of a surface dimer in the problem of adsorption

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:9 (2019),  40–42
  23. SiC-based electronics (100th anniversary of the Ioffe Institute)

    UFN, 189:8 (2019),  803–848
  24. Field effect in monolayer graphene associated with the formation of graphene–water interface

    Fizika Tverdogo Tela, 60:12 (2018),  2474–2477
  25. Intercalation of iron atoms under graphene formed on silicon carbide

    Fizika Tverdogo Tela, 60:7 (2018),  1423–1430
  26. Electron-diffraction study of the structure of epitaxial graphene grown by the method of thermal destruction of 6$H$- and 4$H$-SiC (0001) in vacuum

    Fizika Tverdogo Tela, 60:7 (2018),  1403–1408
  27. Graphene on silicon carbide as a basis for gas- and biosensor applications

    Nanosystems: Physics, Chemistry, Mathematics, 9:1 (2018),  95–97
  28. Radiation-induced damage of silicon-carbide diodes by high-energy particles

    Fizika i Tekhnika Poluprovodnikov, 52:13 (2018),  1651–1655
  29. Galvanic and capacitive effects in $n$-SiC conductivity compensation by radiation-induced defects

    Fizika i Tekhnika Poluprovodnikov, 52:12 (2018),  1532–1534
  30. Transition between electron localization and antilocalization and manifestation of the Berry phase in graphene on a SiC surface

    Fizika i Tekhnika Poluprovodnikov, 52:12 (2018),  1512–1517
  31. Electrical properties of GaAs nanowires grown on graphene/SiC hybrid substrates

    Fizika i Tekhnika Poluprovodnikov, 52:12 (2018),  1507–1511
  32. MBE growth and structural properties of GaP and InP nanowires on a SiC substrate with a graphene layer

    Fizika i Tekhnika Poluprovodnikov, 52:11 (2018),  1317–1320
  33. Formation of radiation defects by proton braking in lightly doped $n$- and $p$-SiC layers

    Fizika i Tekhnika Poluprovodnikov, 52:3 (2018),  327–332
  34. The role of the charge state of surface atoms of a metal substrate in doping of quasi-free-standing graphene

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:23 (2018),  90–95
  35. Local anodic oxidation of graphene layers on SiC

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:9 (2018),  34–40
  36. Field effects in graphene in an interface contact with aqueous solutions of acetic acid and potassium hydroxide

    Fizika Tverdogo Tela, 59:10 (2017),  2063–2065
  37. Study of the crystal and electronic structure of graphene films grown on 6$H$-SiC (0001)

    Fizika i Tekhnika Poluprovodnikov, 51:8 (2017),  1116–1124
  38. Effects of irradiation with 8-MeV protons on $n$-3$C$-SiC heteroepitaxial layers

    Fizika i Tekhnika Poluprovodnikov, 51:8 (2017),  1088–1090
  39. Effect of the energy of bombarding electrons on the conductivity of $n$-4$H$-SiC (CVD) epitaxial layers

    Fizika i Tekhnika Poluprovodnikov, 51:3 (2017),  311–316
  40. A study of the effect of electron and proton irradiation on 4$H$-SiC device structures

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:22 (2017),  63–67
  41. Transport properties of graphene films grown by thermodestruction of SiC (0001) surface in argon medium

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:18 (2017),  64–72
  42. Transport properties of graphene in the region of its interface with water surface

    Fizika Tverdogo Tela, 58:7 (2016),  1432–1435
  43. Supersensitive graphene-based gas sensor

    Zhurnal Tekhnicheskoi Fiziki, 86:3 (2016),  135–139
  44. Growth, study, and device application prospects of graphene on SiC substrates

    Nanosystems: Physics, Chemistry, Mathematics, 7:1 (2016),  30–36
  45. Electron-diffraction study of graphene-film growth stages during the thermal destruction of 6$H$-SiC (000$\bar1$) in vacuum

    Fizika i Tekhnika Poluprovodnikov, 50:7 (2016),  967–972
  46. Development of a spinodal decomposition model for the example of a heterostructure based on silicon carbide polytypes

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:23 (2016),  66–71
  47. Graphene-based biosensors

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:14 (2016),  28–35
  48. On stability of self-sustained volume discharge in working mixtures of non-chain electrochemical HF laser

    Kvantovaya Elektronika, 41:8 (2011),  703–708
  49. HIDDEN ANISOTROPY OF EMITTING TRANSITIONS IN POROUS SILICON

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 18:16 (1992),  60–63
  50. NATURE OF P-LAYER FORMED IN SEMICONDUCTING WAFER INTERFACES UNDER SOLID-PHASE DIRECT SILICON BONDING

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 18:14 (1992),  51–56
  51. Исследование поведения примесей марганца и никеля при диффузионном легировании кремния

    Fizika i Tekhnika Poluprovodnikov, 25:6 (1991),  1075–1078
  52. Влияние изовалентного легирования индием на свойства эпитаксиальных слоев арсенида галлия, выращенного из газовой фазы

    Fizika i Tekhnika Poluprovodnikov, 25:5 (1991),  898–903
  53. Рекомбинационные процессы в $6H$-SiC $p{-}n$-структурах и влияние на них глубоких центров

    Fizika i Tekhnika Poluprovodnikov, 25:3 (1991),  479–486
  54. Высокотемпературный диод Шоттки Au$-$SiC-$6H$

    Fizika i Tekhnika Poluprovodnikov, 25:2 (1991),  328–333
  55. Связь желтой электролюминесценции в $6H$-SiC с глубокими центрами

    Fizika i Tekhnika Poluprovodnikov, 24:8 (1990),  1384–1390
  56. Новый способ обработки спектров DLTS

    Fizika i Tekhnika Poluprovodnikov, 24:3 (1990),  549–552
  57. HYDROPHILIZATION OF A SURFACE UNDER THE DIRECT SILICON FUSION

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:4 (1990),  1–4
  58. Влияние кислорода и углерода на поведение марганца в $n$-Si

    Fizika i Tekhnika Poluprovodnikov, 23:12 (1989),  2227–2229
  59. Исследование скоплений компенсирующих центров в $n$-Si

    Fizika i Tekhnika Poluprovodnikov, 23:11 (1989),  2066–2069
  60. Влияние кислорода на образование акцепторных уровней никеля в $n$-Si

    Fizika i Tekhnika Poluprovodnikov, 23:5 (1989),  919–921
  61. Электронно-механический резонанс на глубоких центрах в $p^{+}{-}p^{0}{-}\pi{-}n^{0}$-структурах арсенида галлия

    Fizika i Tekhnika Poluprovodnikov, 23:5 (1989),  897–899
  62. Self-compensation of iron centers in silicon under optical pumping

    Fizika Tverdogo Tela, 30:7 (1988),  2076–2084
  63. CARBON AND MANGANESE EFFECT ON THE FORMATION STRUCTURAL DEFECTS IN SILICON

    Zhurnal Tekhnicheskoi Fiziki, 58:11 (1988),  2272–2274
  64. Электрические характеристики эпитаксиальных $p^{+}{-}n{-}n^{+}$-структур на основе карбида кремния политипа $6H$

    Fizika i Tekhnika Poluprovodnikov, 22:2 (1988),  298–300
  65. Электростатические свойства SiC-$6H$-структур с резким $p{-}n$-переходом

    Fizika i Tekhnika Poluprovodnikov, 22:1 (1988),  133–136
  66. Влияние ориентированной деформации и $\gamma$-облучения на уровни платины в кремнии

    Fizika i Tekhnika Poluprovodnikov, 22:1 (1988),  16–19
  67. SUPER HIGH-VOLTAGE SILICOR R-P-TRANSITIONS WITH THE BREAKDOWN PRESSURE HIGHER-THAN-20-KV

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:11 (1988),  972–975
  68. PREDOMINANT RECOMBINATION CENTERS IN PARA-GAAS LAYERS, OBTAINED BY PRECIPITATION FROM THE GAS-PHASE

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:2 (1988),  181–185
  69. Properties of high pressure deformed silicon crystals

    Fizika Tverdogo Tela, 29:5 (1987),  1486–1491
  70. Photoionization Cross-Sections for Nickel Levels in Silicon

    Fizika i Tekhnika Poluprovodnikov, 21:12 (1987),  2237–2239
  71. Method to Increase Resolving Power of Nonstationary Capacity Spectroscopy of Deep Levels in Semiconductors

    Fizika i Tekhnika Poluprovodnikov, 21:12 (1987),  2228–2229
  72. Piezocapacity Spectroscopy of Radiation-Induced Defects in $p$-Type Si

    Fizika i Tekhnika Poluprovodnikov, 21:12 (1987),  2149–2151
  73. Effect of Thermal Treatment on the Density of Radiation-Induced Defects in the Dielectric and on the Semiconductor Surface of Silicon MDS Structures

    Fizika i Tekhnika Poluprovodnikov, 21:5 (1987),  836–841
  74. Effect of Uniaxial Pressure on Nonstationary Capacity Spectroscopy of Deep Levels in Si$\langle$Zn$\rangle$

    Fizika i Tekhnika Poluprovodnikov, 21:2 (1987),  321–324
  75. Study of Electro physical Properties of Silicon MDS Structures Irradiated by $\gamma$-Quanta in the Presence of an Electric Field in the Dielectric

    Fizika i Tekhnika Poluprovodnikov, 21:1 (1987),  23–29
  76. Study of the Effect of $\gamma$-Irradiation on the Spectrum of Deep Levels in Zinc-Doped Silicon

    Fizika i Tekhnika Poluprovodnikov, 21:1 (1987),  18–22
  77. New paramagnetic centers in nickel-alloyed silicon

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:21 (1987),  1322–1326
  78. Capacity Spectroscopy of p${-}$n Junctions Based on Epitaxial $4H$-SiC Produced by Ionic Implantation of Al

    Fizika i Tekhnika Poluprovodnikov, 20:12 (1986),  2169–2172
  79. Effect of Deep Levels on Breakdown Voltage of Diodes

    Fizika i Tekhnika Poluprovodnikov, 20:11 (1986),  2122–2125
  80. Determination of Deep-Level Concentration in Semiconductor Bulk Using Nonstationary Capacity-Spectroscopy Data under Constant Capacity

    Fizika i Tekhnika Poluprovodnikov, 20:10 (1986),  1806–1810
  81. Structures with Ionically Implanted p${-}$n Junction Based on Epitaxial $4H$-SiC with $S$-Like Current–Voltage Characteristic

    Fizika i Tekhnika Poluprovodnikov, 20:9 (1986),  1654–1657
  82. Study of Current-Voltage Characteristics of Diode Structures Based on Silicon Carbide

    Fizika i Tekhnika Poluprovodnikov, 20:5 (1986),  844–848
  83. Capacity Spectroscopy of Deep Levels in Semiconductors under Photothermal Emission of Charge Carriers

    Fizika i Tekhnika Poluprovodnikov, 20:4 (1986),  683–686
  84. Study of Iron Interaction with Other Elements in Silicon

    Fizika i Tekhnika Poluprovodnikov, 20:1 (1986),  185–186
  85. SOLID GOLD SOLUTION DECAY IN SILICON .2. DATA ON NUCLEAR MOMENT OPTICAL POLARIZATION STUDY

    Zhurnal Tekhnicheskoi Fiziki, 55:11 (1985),  2162–2169
  86. SOLID GOLD SOLUTION DECAY IN SILICON .1. DATA ON NUCLEAR-SPIN-LATTICE RELAXATION STUDY

    Zhurnal Tekhnicheskoi Fiziki, 55:11 (1985),  2149–2161
  87. Effect of Correlated Inhomogeneous Distribution of Surface Recombination Centers and Charges in Oxide on Minority Charge Carrier Generation under Capacitance Spectroscopy in MDS Structures

    Fizika i Tekhnika Poluprovodnikov, 19:11 (1985),  1971–1975
  88. Effect of Minority Charge Carrier Generation on the Capacity Spectroscopy of Surface States in MDS Structures

    Fizika i Tekhnika Poluprovodnikov, 19:10 (1985),  1791–1795
  89. Study of Thermal Defects in High-Resistance $n$-Type Si

    Fizika i Tekhnika Poluprovodnikov, 19:9 (1985),  1709–1711
  90. DLTS Study of the $\gamma$-Irradiation Effect on the Properties of $n$-Туре Si$\langle$Mn$\rangle$

    Fizika i Tekhnika Poluprovodnikov, 19:9 (1985),  1617–1619
  91. Effect of Series Resistance of a Diode on Unsteady Capacitance Measurements of Deep-Level Parameters

    Fizika i Tekhnika Poluprovodnikov, 19:8 (1985),  1382–1385
  92. Capacitance Measurements of Deep-Impurity Distribution Profile and Surface Concentration in Thin Doped Layers

    Fizika i Tekhnika Poluprovodnikov, 19:8 (1985),  1375–1381
  93. Capacitance and Photoelectric Spectroscopy of Thallium Levels in Silicon

    Fizika i Tekhnika Poluprovodnikov, 19:7 (1985),  1273–1276
  94. Effect of High Hydrostatic Pressure on Activation Energy of Mn Levels in $n$-Туре Si

    Fizika i Tekhnika Poluprovodnikov, 19:6 (1985),  1159–1161
  95. Interaction of Oxygen with Manganese in $n$-Si

    Fizika i Tekhnika Poluprovodnikov, 19:6 (1985),  1158–1159
  96. Evaluation of the Profile of Silicon Oxidation-Degree Distribution in Si$-$SiO$_{2}$ Transient Layers

    Fizika i Tekhnika Poluprovodnikov, 19:6 (1985),  1156–1158
  97. Study of Deep-Center Density in Cathode-Sputtered SiO$_x$ Films Depending on the Degree of Silicon Oxidation

    Fizika i Tekhnika Poluprovodnikov, 19:6 (1985),  1087–1091
  98. Effect of Plastic Deformation on the State of Oxygen and Carbon in Silicon

    Fizika i Tekhnika Poluprovodnikov, 19:6 (1985),  982–986
  99. Photoconduction of Selenium-Doped Silicon

    Fizika i Tekhnika Poluprovodnikov, 19:5 (1985),  919–922
  100. Capacity Spectroscopy of Deep Levels in $n$-Si(Cr)

    Fizika i Tekhnika Poluprovodnikov, 19:5 (1985),  917–919
  101. Capacity Spectroscopy of Radiation-Induced Defects Produced in Si$-$SiO$_{2}$ Transient Layer under Cathode Sputterig

    Fizika i Tekhnika Poluprovodnikov, 19:5 (1985),  831–835
  102. Energy Levels of Selenium in Silicon

    Fizika i Tekhnika Poluprovodnikov, 19:4 (1985),  597–600
  103. Study of Fe in $n$-Type Si by ESR and Capacity Methods

    Fizika i Tekhnika Poluprovodnikov, 19:2 (1985),  349–350
  104. Parameters of Deep Levels in Si$\langle$V$\rangle$

    Fizika i Tekhnika Poluprovodnikov, 19:2 (1985),  338–340
  105. Deep Levels in Silicon Related with Manganese

    Fizika i Tekhnika Poluprovodnikov, 19:2 (1985),  213–216
  106. Photoconduction of Chromium-Doped Silicon

    Fizika i Tekhnika Poluprovodnikov, 19:1 (1985),  162–164
  107. Capacity-Spectroscopic Study of Deep Levels in SiC

    Fizika i Tekhnika Poluprovodnikov, 19:1 (1985),  114–117
  108. Влияние высокого давления на состояние оптически активного кислорода в кремнии при термообработке

    Fizika i Tekhnika Poluprovodnikov, 18:7 (1984),  1306–1307
  109. RECTIFIER DIODE BASED ON SILICON-CARBIDE

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 10:17 (1984),  1053–1056
  110. FACTORS, CONTRIBUTING TO 2ND-PHASE FORMATIONS IN NONCRUCIBLE SILICON

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 10:14 (1984),  837–840
  111. Емкостная спектроскопия глубоких уровней, возникающих в кремнии после диффузии серы

    Fizika i Tekhnika Poluprovodnikov, 17:12 (1983),  2152–2155
  112. Фото-ЭПР кремния, легированного железом, в обратно смещенном $p{-}n$-переходе

    Fizika i Tekhnika Poluprovodnikov, 17:7 (1983),  1344–1347

  113. Comparative study of conventional and quasi-freestanding epitaxial graphenes grown on 4$H$-SiC substrate

    Fizika i Tekhnika Poluprovodnikov, 54:12 (2020),  1383

© Steklov Math. Inst. of RAS, 2024