Nagalyuk Sergei Stepanovich

Publications in Math-Net.Ru

1. Isotopically modified silicon carbide: a semiconductor platform for quantum technologies
   
   Fizika Tverdogo Tela, 67:1 (2025),  114–120
2. Synchrotron radiation effect on the AlN thermal conductivity
   
   Fizika Tverdogo Tela, 65:10 (2023),  1848–1853
3. Creation of optically addressable spin centers in hexagonal boron nitride by proton irradiation
   
   Fizika Tverdogo Tela, 64:8 (2022),  1033–1037
4. 6H-SiC nanoparticles integrated with an atomic force microscope for scanning quantum sensors
   
   Pis'ma v Zh. Èksper. Teoret. Fiz., 116:11 (2022),  810–815
5. Growth of hexagonal boron nitride (hBN) on silicon carbide substrates by the physical vapor transport method
   
   Fizika i Tekhnika Poluprovodnikov, 56:10 (2022),  1011–1015
6. The effect of liquid Silicon on the AlN crystal growth
   
   Fizika i Tekhnika Poluprovodnikov, 56:6 (2022),  527
7. High-temperature diffusion of the acceptor impurity Be in AlN
   
   Fizika i Tekhnika Poluprovodnikov, 56:3 (2022),  275–278
8. Effect of mechanical stress on the splitting of spin sublevels in 4H-SiC
   
   Pis'ma v Zh. Èksper. Teoret. Fiz., 114:5 (2021),  323–327
9. Origin of green coloration in AlN crystals grown on SiC seeds
   
   Fizika i Tekhnika Poluprovodnikov, 55:6 (2021),  513–517
10. Effect of the beryllium acceptor impurity upon the optical properties of single-crystal AlN
    
    Fizika i Tekhnika Poluprovodnikov, 54:3 (2020),  224–227
11. SiC-based electronics (100th anniversary of the Ioffe Institute)
    
    UFN, 189:8 (2019),  803–848
12. Influence of neutron irradiation on etching of SiC in KOH
    
    Zhurnal Tekhnicheskoi Fiziki, 87:7 (2017),  1104–1106
13. Absorption spectra of bulk aluminum nitride crystals doped with Er$^{3+}$ ions
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:3 (2016),  91–96