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Nagalyuk Sergei Stepanovich

Publications in Math-Net.Ru

  1. Высокотемпературная диффузия бериллия в AlN как направление решения проблемы легирования $p$-типа и снижения интенсивности оптического поглощения

    Fizika Tverdogo Tela, 67:6 (2025),  940–945
  2. Isotopically modified silicon carbide: a semiconductor platform for quantum technologies

    Fizika Tverdogo Tela, 67:1 (2025),  114–120
  3. Synchrotron radiation effect on the AlN thermal conductivity

    Fizika Tverdogo Tela, 65:10 (2023),  1848–1853
  4. Creation of optically addressable spin centers in hexagonal boron nitride by proton irradiation

    Fizika Tverdogo Tela, 64:8 (2022),  1033–1037
  5. 6H-SiC nanoparticles integrated with an atomic force microscope for scanning quantum sensors

    Pis'ma v Zh. Èksper. Teoret. Fiz., 116:11 (2022),  810–815
  6. Growth of hexagonal boron nitride (hBN) on silicon carbide substrates by the physical vapor transport method

    Fizika i Tekhnika Poluprovodnikov, 56:10 (2022),  1011–1015
  7. The effect of liquid Silicon on the AlN crystal growth

    Fizika i Tekhnika Poluprovodnikov, 56:6 (2022),  527
  8. High-temperature diffusion of the acceptor impurity Be in AlN

    Fizika i Tekhnika Poluprovodnikov, 56:3 (2022),  275–278
  9. Effect of mechanical stress on the splitting of spin sublevels in 4H-SiC

    Pis'ma v Zh. Èksper. Teoret. Fiz., 114:5 (2021),  323–327
  10. Origin of green coloration in AlN crystals grown on SiC seeds

    Fizika i Tekhnika Poluprovodnikov, 55:6 (2021),  513–517
  11. Effect of the beryllium acceptor impurity upon the optical properties of single-crystal AlN

    Fizika i Tekhnika Poluprovodnikov, 54:3 (2020),  224–227
  12. SiC-based electronics (100th anniversary of the Ioffe Institute)

    UFN, 189:8 (2019),  803–848
  13. Influence of neutron irradiation on etching of SiC in KOH

    Zhurnal Tekhnicheskoi Fiziki, 87:7 (2017),  1104–1106
  14. Absorption spectra of bulk aluminum nitride crystals doped with Er$^{3+}$ ions

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:3 (2016),  91–96


© Steklov Math. Inst. of RAS, 2025